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    2SK39 Search Results

    2SK39 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3901-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 60A 13Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3901(0)-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 60A 13Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3993-S15-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3919-ZK-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3992-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK39 Price and Stock

    Toshiba America Electronic Components 2SK3906(Q)

    MOSFET N-CH 600V 20A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3906(Q) Bulk
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    Rochester Electronics LLC 2SK3978-TL-E

    2SK3978 - N-CHANNEL SILICON MOSF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3978-TL-E Bulk 1,211
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    Rochester Electronics LLC 2SK3980-TD-E

    N-CHANNEL MOSFET
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    DigiKey 2SK3980-TD-E Bulk 1,402
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    Rochester Electronics LLC 2SK3984-ZK-E1-AZ

    SMALL SIGNAL FET
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    DigiKey 2SK3984-ZK-E1-AZ Bulk 346
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    Rochester Electronics LLC 2SK3900-ZP-E1-AZ

    POWER FIELD-EFFECT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3900-ZP-E1-AZ Bulk 145
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    2SK39 Datasheets (101)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK39 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK39 Unknown FET Data Book Scan PDF
    2SK39 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3900 Kexin N-Channel MOSFET Original PDF
    2SK3900 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3900 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF
    2SK3900-ZP NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3901 Kexin N-Channel MOSFET Original PDF
    2SK3901 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3901 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF
    2SK3901(0)-ZK-E1-AY Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3901-ZK NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3902 Kexin N-Channel MOSFET Original PDF
    2SK3902 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3902 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF
    2SK3902(0)-ZK-E1-AY Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3902-ZK NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3903 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF
    2SK3904 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF
    2SK3905 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF

    2SK39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3926-01MR

    Abstract: No abstract text available
    Text: 2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


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    PDF 2SK3926-01MR O-220F 2SK3926-01MR

    max 1786

    Abstract: 2SK3929-01MR
    Text: 2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


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    PDF 2SK3929-01MR O-220F max 1786 2SK3929-01MR

    2SK3928-01

    Abstract: No abstract text available
    Text: 2SK3928-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


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    PDF 2SK3928-01 O-220AB 2SK3928-01

    2sk3944

    Abstract: No abstract text available
    Text: 2SK3944 注文コード No. N 8 3 3 0 2SK3944 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 2SK3944 250mm2 IT07495 IT09799 IT09800 IT09794 2sk3944

    48v 100a

    Abstract: scd 301 2SK3913-01MR 2sk3913
    Text: 2SK3913-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


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    PDF 2SK3913-01MR O-220F 48v 100a scd 301 2SK3913-01MR 2sk3913

    2SK3918

    Abstract: *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1


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    PDF 2SK3918 O-252 Po12A 2SK3918 *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent

    K3903

    Abstract: 2SK3903 SC-65
    Text: 2SK3903 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3903 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.32 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


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    PDF 2SK3903 SC-65 2-16C1B K3903 2SK3903 SC-65

    K3935

    Abstract: 2SK3935
    Text: 2SK3935 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3935 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 10 S (標準)


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    PDF 2SK3935 SC-67 2-10U1B K3935 2SK3935

    k3934

    Abstract: transistor k3934 K-393 2SK3934 2SK3934 equivalent
    Text: 2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.)


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    PDF 2SK3934 k3934 transistor k3934 K-393 2SK3934 2SK3934 equivalent

    K3936

    Abstract: 2SK3936 SC-65
    Text: 2SK3936 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3936 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 • 逆回復時間が早い。 : trr = 380 ns (標準)


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    PDF 2SK3936 K3936 2SK3936 SC-65

    2SK3935

    Abstract: K3935
    Text: 2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3935 Switching Regulator Applications Unit: mm z Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current:


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    PDF 2SK3935 2SK3935 K3935

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1


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    PDF 2SK3902 O-263

    2SK3977

    Abstract: No abstract text available
    Text: 2SK3977 Ordering number : ENA0391 SANYO Semiconductors DATA SHEET 2SK3977 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SK3977 ENA0391 A0391-4/4 2SK3977

    D1707

    Abstract: 2SK3919 2SK3919 equivalent 2SK3919-ZK 2SK39
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3919 TO-251 MP-3 2SK3919-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching


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    PDF 2SK3919 2SK3919 O-251 2SK3919-ZK O-252 O-251) D1707 2SK3919 equivalent 2SK3919-ZK 2SK39

    D1717

    Abstract: 2SK3902 2SK3902-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3902 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3902-ZK TO-263 MP-25ZK


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    PDF 2SK3902 2SK3902 2SK3902-ZK O-263 MP-25ZK) O-263) D1717 2SK3902-ZK

    k3995

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


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    PDF 2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3939 Silicon N-channel MOS FET For switching circuits • Package  High-speed switching  Optimum for high-density mounting and downsizing of the equipment for


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    PDF 2002/95/EC) 2SK3939

    2SK3979

    Abstract: k3979
    Text: 2SK3979 Ordering number : ENA0263A 2SK3979 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


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    PDF 2SK3979 ENA0263A PW10s, A0263-4/4 2SK3979 k3979

    transistor k3934

    Abstract: K3934 2SK3934
    Text: 2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.)


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    PDF 2SK3934 transistor k3934 K3934 2SK3934

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3973G Silicon N-channel MOS FET For switching circuits • Features  Package  Low ON resistance Ron  High-speed switching  Allowing 1.8 V drive  SSSMini type package, allowing downsizing of the equipment and


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    PDF 2002/95/EC) 2SK3973G

    2SK3937

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2


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    PDF 2002/95/EC) UP0487C 2SK3937 2SK3937

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3973 Silicon N-channel MOSFET For switching circuits Unit: mm • Features 0.33+0.05 –0.02  Low ON resistance Ron  High-speed switching  Allowing 1.8 V drive


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    PDF 2002/95/EC) 2SK3973

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) 2SK3939 Silicon N-channel MOS FET For switching circuits • Features  Package  High-speed switching  Optimum for high-density mounting and downsizing of the equipment for


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    PDF 2002/95/EC) 2SK3939

    2SK3937

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0487C Silicon N-channel MOSFET For switching circuits • Basic Part Number 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° 0.10 max. 0.55±0.05 Display at No.1 lead  2SK3937 x 2


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    PDF 2002/95/EC) UP0487C 2SK3937 2SK3937