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    2SK379 Search Results

    2SK379 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3794-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3794(0)-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3793(0)-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 12A 125Mohm Mp-45F/To-220 Visit Renesas Electronics Corporation
    2SK3793-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 12A 125Mohm Mp-45F/To-220 Visit Renesas Electronics Corporation
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    2SK379 Price and Stock

    Renesas Electronics Corporation 2SK3793-AZ

    MOSFET N-CH 100V 12A TO220
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    DigiKey 2SK3793-AZ Bulk 200
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    onsemi 2SK3796-2-TL-E

    JFET N-CH 10MA SMCP
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    Verical 2SK3796-2-TL-E 179,500 3,258
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    2SK3796-2-TL-E 150,000 3,258
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    2SK3796-2-TL-E 27,000 3,258
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    Rochester Electronics 2SK3796-2-TL-E 356,500 1
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    Rochester Electronics LLC 2SK3796-2-TL-E

    JFET N-CH 10MA SMCP
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    DigiKey 2SK3796-2-TL-E Bulk 2,664
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    onsemi 2SK3796-4-TL-E

    JFET N-CH 10MA SMCP
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    Rochester Electronics LLC 2SK3796-3-TL-E

    JFET N-CH 10MA SMCP
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    Find more 2SK379 price and stock on Findchips.com

    2SK379 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK379 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK379 Unknown FET Data Book Scan PDF
    2SK3793 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3793-AZ Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V MP-45F/TO-220 Original PDF
    2SK3794 Kexin N-Channel MOSFET Original PDF
    2SK3794 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3794 NEC Switching N-Channel Power MOS FET Original PDF
    2SK3794 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3794-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3794-Z NEC Switching N-Channel Power MOS FET Original PDF
    2SK3796 Sanyo Semiconductor N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Original PDF
    2SK3796-2-TL-E On Semiconductor 2SK3796 - Junction FET 30V 10mA Nch SMCP Original PDF
    2SK3796-3-TL-E On Semiconductor 2SK3796 - N-Channel JFET for Low Frequency General Purpose Amplifier and Impedance Conversion Applications, IDSS = 1.2-3.0 mA Original PDF
    2SK3796-4-TL-E On Semiconductor 2SK3796 - Junction FET 30V 10mA Nch SMCP Original PDF
    2SK3797 Toshiba Silicon N-Channel MOS Type Original PDF
    2SK3797 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3797QM Toshiba 2SK3797QM - Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS Original PDF
    2SK3798 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3798 Toshiba Silicon N Channel MOS Type Switching Regulator Applications Original PDF
    2SK3798(Q,M) Toshiba 2SK3798 - Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SK379 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type Product specification 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25


    Original     		2SK3794 O-252 PDF

    K3797

    Abstract: 2SK3797 2SK3797 equivalent
    Text: 2SK3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		2SK3797 SC-67 2-10U1B K3797 2SK3797 2SK3797 equivalent PDF

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B PDF

    D1677

    Abstract: 2SK3794-Z 2SK3794
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3


    Original     		2SK3794 2SK3794 O-251 2SK3794-Z O-252 O-251) O-251/TO-252 O-252) D1677 2SK3794-Z PDF

    K3797

    Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) PDF

    K3797 Transistor

    Abstract: K3797 2SK3797 54V4 transistor k3797 K379
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379 PDF

    K3799

    Abstract: 2sk3799 K379
    Text: 2SK3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK3799 SC-67 2-10U1B K3799 2sk3799 K379 PDF

    k3798

    Abstract: 2SK3798 K379
    Text: 2SK3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		2SK3798 SC-67 2-10U1B k3798 2SK3798 K379 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 PDF

    k3799

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 k3799 PDF

    2SK3796

    Abstract: ITR00633 ITR00634 ITR00635 ITR00636 ITR00637 ITR00638 ITR00639 ITR00640
    Text: 2SK3796 注文コード No. N 8 6 3 6 三洋半導体データシート N 2SK3796 N チャネル接合型シリコン電界効果トランジスタ 低周波一般増幅用 , インピーダンス変換用 用途 ・低周波一般増幅インピーダンス変換用、アナログスイッチ用。


    Original     		2SK3796 32207GB TC-00000609 ITR00637 ITR00641 ITR00642 ITR00646 2SK3796 ITR00633 ITR00634 ITR00635 ITR00636 ITR00637 ITR00638 ITR00639 ITR00640 PDF

    2SK3796

    Abstract: No abstract text available
    Text: 2SK3796 Ordering number : EN8636A SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3796 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications


    Original     		2SK3796 EN8636A 2SK3796 PDF

    2SK3796

    Abstract: No abstract text available
    Text: 2SK3796 Ordering number : EN8636 SANYO Semiconductors DATA SHEET 2SK3796 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.


    Original     		2SK3796 EN8636 2SK3796 PDF

    k3798

    Abstract: 2SK3798
    Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		2SK3798 k3798 2SK3798 PDF

    SMD transistor Mu

    Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		2SK3794 O-252 SMD transistor Mu smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A PDF

    k3798

    Abstract: 2SK3798 equivalent 2SK3798 K379
    Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 2SK3798 equivalent 2SK3798 K379 PDF

    K3799

    Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 PDF

    k3799

    Abstract: K3799 Transistor
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)


    Original     		2SK3799 k3799 K3799 Transistor PDF

    K3799

    Abstract: transistor 2SK3799 K3799 Transistor 2SK3799
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 transistor 2SK3799 K3799 Transistor 2SK3799 PDF

    D1677

    Abstract: 2SK3794 2SK3794-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3


    Original     		2SK3794 2SK3794 O-251 2SK3794-Z O-252 O-251) O-251/TO-252 O-252) D1677 2SK3794-Z PDF

    2SK3796

    Abstract: No abstract text available
    Text: Ordering number : EN8636B 2SK3796 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, SMCP Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features • Small IGSS • Small Ciss Specifications


    Original     		EN8636B 2SK3796 2SK3796 PDF

    D1677

    Abstract: 2SK3794 2SK3794-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 2SK3794-Z


    Original     		2SK3794 2SK3794 O-251 2SK3794-Z O-252 O-251) O-251/TO-252 O-252) D1677 2SK3794-Z PDF

    k3797

    Abstract: K3797 Transistor K379 2SK3797
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3797 k3797 K3797 Transistor K379 2SK3797 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 PDF