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    2SK338 Price and Stock

    Toshiba America Electronic Components 2SK3388(TE24L,Q)

    MOSFET N-CH 250V 20A 4TFP
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    Renesas Electronics Corporation 2SK3385(0)-Z-E1-AZ

    TRANSISTOR
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    Renesas Electronics Corporation 2SK3386(0)-Z-E1-AZ

    TRANSISTOR
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    Renesas Electronics Corporation 2SK3386-Z-AZ

    Small Signal Field-Effect Transistor, 34A, 60V, N-Channel MOSFET
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    Rochester Electronics 2SK3386-Z-AZ 243 1
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    2SK338 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK338 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK3380 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3380 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Switching Original PDF
    2SK3380 Renesas Technology Silicon N Channel MOS FET High Speed Switching Original PDF
    2SK3385 Kexin N-Channel MOSFET Original PDF
    2SK3385 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3385 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3385 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3385(0)-Z-E1-AZ Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3385-Z NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3385-Z NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3386 Kexin N-Channel MOSFET Original PDF
    2SK3386 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3386 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3386 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3386(0)-Z-E1-AZ Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3386-Z NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3387 Toshiba FETs - Nch 60V Original PDF
    2SK3387 Toshiba Original PDF
    2SK3387 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK338 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dsi 3550

    Abstract: dr 25 diode
    Text: T E N T A T IV E T O S H I B A 2SK3389 T OS HI BA F I E L D E F F E C T TRANSI STOR S I L I C O N N CHANNEL MOS T Y P E U - M 0 S 1 I 2 S K 3 3 8 9 INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. _ UNIT:mm M1


    OCR Scan
    2SK3389 ID-38A dsi 3550 dr 25 diode PDF

    D144

    Abstract: 2SK3386 2SK3386-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.


    Original
    2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 O-251) 120ce D144 2SK3386-Z PDF

    K3389

    Abstract: k338 2SK3389
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original
    2SK3389 K3389 k338 2SK3389 PDF

    k338

    Abstract: 2SK3389
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original
    2SK3389 k338 2SK3389 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3402 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original
    2SK3402 2SK3402 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


    Original
    2SK3387 PDF

    2SK3389

    Abstract: No abstract text available
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) · High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original
    2SK3389 2SK3389 PDF

    2SK3385-Z

    Abstract: 2SK3385
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 designed for high current switching applications.


    Original
    2SK3385 2SK3385 O-251 2SK3385-Z O-252 O-251/TO-252 O-251) 2SK3385-Z PDF

    2SK3387

    Abstract: K3387
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


    Original
    2SK3387 2SK3387 K3387 PDF

    2SK3388

    Abstract: No abstract text available
    Text: 2SK3388 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3388 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 20 S (標準)


    Original
    2SK3388 SC-97 2SK3388 PDF

    2SK3386

    Abstract: 2SK3386-Z D1447
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original
    2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 2SK3386-Z D1447 PDF

    2SK3288

    Abstract: 2SK3380 Hitachi DSA00333
    Text: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK


    Original
    2SK3380 ADE-208-806 2SK3288 2SK3380 Hitachi DSA00333 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original
    2SK3388 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.


    Original
    2SK3386 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251) PDF

    2SK3389

    Abstract: k338
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original
    2SK3389 2SK3389 k338 PDF

    M2SK3386

    Abstract: 2SK3386 2SK3386-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original
    2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 O-251) 120ems, M2SK3386 2SK3386-Z PDF

    2SK3288

    Abstract: 2SK3380 DSA003644
    Text: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK D 12 3


    Original
    2SK3380 ADE-208-806 2SK3288 2SK3380 DSA003644 PDF

    K3387

    Abstract: 2SK3387
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


    Original
    2SK3387 K3387 2SK3387 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SK3386 TO-252 MAX. VGS = 4.0 V, ID = 17A Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(on)2 = 36 m +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 17A)


    Original
    2SK3386 O-252 PDF

    2SK3385-Z

    Abstract: 2SK3385 D1447
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original
    2SK3385 2SK3385 O-251 2SK3385-Z O-252 O-251/TO-252 2SK3385-Z D1447 PDF

    3773 P

    Abstract: 3773P 2SK338 transistor cc 5551 EK06 F530 24si
    Text: M O S Field E ffe c t P o w e r T ra n s is to r 2SK338 m i * jb e m B u i. j i m m High V oltage, High Speed, High C u rre n t Sw itching Industrial Use 2 S K 3 3 8 i i , B l i ± ^ N ^ - - v ^ ; H i i ^ ° ’7 - M O S F E T T , X 'f 'v f - > ti-Mm /P A C K A G E DIM ENSIO NS


    OCR Scan
    2SK338 3773 P 3773P 2SK338 transistor cc 5551 EK06 F530 24si PDF

    "MARKING CODE S1" toshiba

    Abstract: No abstract text available
    Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)


    Original
    2SK3387 "MARKING CODE S1" toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original
    2SK3386 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251) 40ntrol PDF

    2SK3385-Z

    Abstract: M2SK3385 2SK3385
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original
    2SK3385 O-251 2SK3385-Z 2SK3385 O-252 O-251/TO-252 O-251) 2SK3385-Z M2SK3385 PDF