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    2SK2651 Search Results

    2SK2651 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2651 Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2651-01MR Fuji Electric N-channel MOS-FET Scan PDF

    2SK2651 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2651-01MR

    2SK2651-01MR

    Abstract: No abstract text available
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2651-01MR 2SK2651-01MR

    2SK2651-01MR

    Abstract: MOSFET 900V 3A 2sk2651
    Text: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2651-01MR 2SK2651-01MR MOSFET 900V 3A 2sk2651

    2SK2651

    Abstract: 2SK2651-01MR MOSFET 719
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2651-01MR O-220F 2SK2651 2SK2651-01MR MOSFET 719

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2651-01MR O-220F15 SC-67

    2SK2651

    Abstract: 2SK2651-01MR 2SK26
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2651-01MR O-220F 2SK2651 2SK2651-01MR 2SK26

    2SK2651

    Abstract: Vcc-90
    Text: 2SK2651-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2651-01MR O-220F 2SK2651 Vcc-90

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


    Original
    PDF O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    2sk3337

    Abstract: 2SK2655-01R
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated(Continued) 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR


    Original
    PDF 2SK2767-01 2SK2768-01L, 2SK2769-01MR 2SK2770-01 2SK2651-01MR 2SK2652-01 2SK2850-01 2SK2653-01R 2SK2654-01 2SK2655-01R 2sk3337

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


    Original
    PDF 2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original
    PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SK2651-01MR

    Abstract: No abstract text available
    Text: F U JI 2SK2651-01MR SUJM FAP-IIS Series s l TL^U G N-channel MOS-FET 900V 2,5 0 . 6A 50W Min. Typ. Max. Unit V V PA mA > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V G uarantee Repetitive A valanche Rated


    OCR Scan
    PDF 2SK2651-01MR 0004b77

    Untitled

    Abstract: No abstract text available
    Text: 2SK2651-01MR F U JI N-channel MOS-FET FAP-IIS Series > Features - 6A 50 W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated TO -220F15 4i 10 03.2


    OCR Scan
    PDF 2SK2651-01MR -220F15 i00//s 0G04b77

    Untitled

    Abstract: No abstract text available
    Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.


    OCR Scan
    PDF 2SK2646-01 2SK2647-01MR 2SK2762-01L, 2SK2763-01 2SK2764-01R 2SK2765-01 2SK2766-01R 2SK2648-01 2SK2649-01R 2SK2767-01

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan
    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    2SK2645-01MR

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W


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    PDF 2SK2538-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M 2SK264M FAP456 2SK2759-01R 2SK2643-01 2SK2645-01MR

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan
    PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    2sk2645

    Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
    Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    PDF 2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 O-220 2SK27S8-01L 2SK2641-01 2sk2645 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan
    PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    Untitled

    Abstract: No abstract text available
    Text: S P E C I F I C A T I O N DEVI Œ NAME : P o w e r TYPE NAME : 2 S K M O S F E T 2 6 5 I- Q 1 M R SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric C o J i c L DRAWN CHECKED


    OCR Scan
    PDF 2SK2651-01MR 0257-R-004a 2SK2651-01MR O--220F

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    PDF 2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L 2SK2641-01 FAP450