K2614
Abstract: 2SK2614 K261
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance
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2SK2614
K2614
2SK2614
K261
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Untitled
Abstract: No abstract text available
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2614 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance
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2SK2614
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K2614
Abstract: 2SK2614 S45C K261
Text: 2SK2614 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2614 リレー駆動DC-DC コンバータ用 モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 • 4 V 駆動です。 • オン抵抗が低い。
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2SK2614
SC-64
K2614
2SK2614
S45C
K261
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K2614
Abstract: 2SK2614
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) Rating Unit
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2SK2614
K2614
2SK2614
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Untitled
Abstract: No abstract text available
Text: 2SK2614 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK2614 Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.032 Ω (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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2SK2614
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Untitled
Abstract: No abstract text available
Text: 2SK2614 TOSHIBA Field Effect Transistor 2 Silicon N-Channel MOS Type L − −MOSV 2SK2614 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 4-V gate drive : RDS (ON) = 0.032 High forward transfer admittance : |Yfs| = 13 S (typ.)
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2SK2614
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K2614
Abstract: 2SK2614
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) z High forward transfer admittance
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2SK2614
K2614
2SK2614
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K2614
Abstract: 2SK2614
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) Rating Unit
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2SK2614
K2614
2SK2614
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2SK2614
Abstract: No abstract text available
Text: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) z High forward transfer admittance
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2SK2614
2SK2614
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •
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2SK2614
20kil)
--20A
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2SK261 toshiba
Abstract: 2SK261 2SK2614
Text: TOSHIBA TENTATIVE 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK261 4 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •
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2SK2614
2SK261
VDD-40V,
2SK261 toshiba
2SK2614
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K2614
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L^ tt-M O S V 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS
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2SK2614
100//A
K2614
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2SK2614
Abstract: No abstract text available
Text: TOSHIBA 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •
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2SK2614
10jus
VDD-40V,
VGS-10V,
ID-20A
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EIAJ
Abstract: 2SK2614
Text: T O S H IB A 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •
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2SK2614
VDD-40V,
EIAJ
2SK2614
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2SK2614
Abstract: No abstract text available
Text: T O S H IB A 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2614 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS • 4 V Gate Drive • Low Drain-Source ON Resistance r d s (o n ) = • High Forward Transfer Admittance
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2SK2614
2SK2614
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive
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2SK2614
100/uA
20kfl)
VDD-t40V,
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