Untitled
Abstract: No abstract text available
Text: 2SK2572 Power F-MOS FETs 2SK2572 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3
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2SK2572
2SK2572
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Hitachi DSA002758
Abstract: No abstract text available
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS on = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2570 Absolute Maximum Ratings (Ta = 25°C)
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2SK2570
ADE-208-574
Hitachi DSA002758
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PDF
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid
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2SK2573
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 2.0 ● Contactless relay ● Diving circuit for a solenoid
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2SK2571
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2SK2570
Abstract: 2SK2570ZL-TL-E 2SK2570ZL-TR-E SC-59A
Text: 2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 Previous: ADE-208-574 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK)
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Original
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2SK2570
REJ03G1019-0200
ADE-208-574)
PLSP0003ZB-A
2SK2570
2SK2570ZL-TL-E
2SK2570ZL-TR-E
SC-59A
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PDF
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2SK2570
Abstract: Hitachi DSA00238 A5150
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS on = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D 1. Source 2. Gate
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Original
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2SK2570
ADE-208-574
2SK2570
Hitachi DSA00238
A5150
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PDF
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance RDS on = 0. 8Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2570 Absolute Maximum Ratings (Ta = 25°C)
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Original
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2SK2570
ADE-208-574
Hitachi DSA002780
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PDF
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 Z 1st. Edition Aug. 1997 Features • Low on-resistance R DS(on) = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2
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2SK2570
ADE-208-574
D-85622
Hitachi DSA00276
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2578 Power F-MOS FETs 2SK2578 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Low-voltage drive ● Non-contact ● Solenoid ● Motor
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2SK2578
2SK2578
O-220E
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2574 Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3
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2SK2574
2SK2573
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PDF
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2SK2579
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2579 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •
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OCR Scan
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2SK2579
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PDF
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2SK2571
Abstract: No abstract text available
Text: Panasonic P o w e r F - M O S FETs 2SK2571 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U n it : m m • Avalanche energy capability guaranteed • High-speed switching * • Low ON-resistance • No secondary breakdown ■Applications
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OCR Scan
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2SK2571
2SK2571
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PDF
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2SK2574
Abstract: AJ04 CR10000
Text: Panasonic P o w e r F -M O S F E T s 2SK2574 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •
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OCR Scan
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2SK2574
AJ04
CR10000
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2571 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown t r ■Applications • • • • •
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OCR Scan
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2SK2571
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PDF
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2SK2576
Abstract: No abstract text available
Text: Panasonic P o w e r F - M O S FETs 2SK2576 Tentative Silicon N -Channel Power F-M OS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay
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OCR Scan
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2SK2576
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PDF
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2SK2573
Abstract: No abstract text available
Text: Panasonic P o w er F -M O S FE T s 2SK2573 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U nit : mm • Avalanche energy capability guaranteed • High-speed switching £ t • Low ON-resistance • No secondary breakdown 5X ■Applications
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OCR Scan
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2SK2573
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PDF
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2SK2577
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2577 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •
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OCR Scan
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2SK2577
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PDF
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2SK2572
Abstract: No abstract text available
Text: Panasonic P ow er F-M O S FETs 2SK2572 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown £ 5X ■ Applications • • • •
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OCR Scan
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2SK2572
Tc-25
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PDF
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2SK2574
Abstract: 2sk257
Text: Panasonic Power F-MOS FETs 2SK2574 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • •
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OCR Scan
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2SK2574
2sk257
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PDF
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2SK2577
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK2577 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■Applications • • •
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OCR Scan
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2SK2577
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PDF
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2SK2578
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2578 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay
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OCR Scan
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2SK2578
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PDF
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2SK2572
Abstract: DC motor control 120w 30v
Text: Panasonic P ow er F -M O S FETs 2SK2572 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown 5X ■ Applications • Non-contact relay
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OCR Scan
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2SK2572
DC motor control 120w 30v
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS „n, = 0. m typ. (Vos = 4 V, ID = 1(M mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK *2 1. Source 2. Gate 3. Drain 990 ADE-208-574
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OCR Scan
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2SK2570
ADE-208-574
10jis,
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PDF
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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OCR Scan
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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