Untitled
Abstract: No abstract text available
Text: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.
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2SK2044
120ns)
O-220FI
51193TH
X-9260
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K2044
Abstract: ITR02378 2SK2044LS ITR02376 ITR02377 ENN4286B
Text: Ordering number : ENN4286B 2SK2044LS N-Channel Silicon MOSFET 2SK2044LS Ultrahigh-Speed Switching Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. High-speed diode trr=120ns . Micaless package facilitating mounting. unit : mm
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ENN4286B
2SK2044LS
120ns)
2078C
2SK2044LS]
O-220FI
K2044
ITR02378
2SK2044LS
ITR02376
ITR02377
ENN4286B
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2SK2044
Abstract: No abstract text available
Text: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.
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ENN4286A
2SK2044
120ns)
2078B
2SK2044]
O-220FI
2SK2044
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 4286A 2SK2044 N0.4286A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in t^= 120ns . • Micaless package facilitating easy mounting.
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120ns)
2SK2044
100se
DDlbS12
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PDF
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2SK2044
Abstract: No abstract text available
Text: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.
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Original
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ENN4286A
2SK2044
120ns)
2078B
2SK2044]
O-220FI
2SK2044
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PDF
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2SK2044
Abstract: No abstract text available
Text: Ordering number : EN 4286A 2SK2044 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tj.r = 120ns . • Micaless package facilitating easy mounting.
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EN4286A
2SK2044
120ns)
2SK2044
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Untitled
Abstract: No abstract text available
Text: 2SK2044 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55
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2SK2044
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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3SK164
Abstract: 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011
Text: - 128 - H f m £ tt ffl « & m & vm * K V A £ Vos* m * (V) X fr * fê S l* IS P d /P c h (A) 1* (W) loss (max) (A) Vg s (V) W (Ta=25*C) 14 (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) 9m (min) (S) { \ l f Id (A) Vd s (V) Id (A) HS SW MOS
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2SK2044
2SK2045
2SK2053
2SK2054
2SK2055
3SK16
3SK17
20nsmax.
25nsmax
3SK18
3SK164
3SK14 NEC
3sk21
3SK20
3sk30
3SK30A
2SK2132
3SK30A D,S,G1,G2
3SK33
LM 1011
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PDF
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2SK2227
Abstract: No abstract text available
Text: Voss = 450V, N-channel m TP SM P « b 2SK2403 2SK2404 Electrical characteristics at Ta = 25°C f*OS en Package m 2SK2406 & I 1 i Typ« No. -2 T C 450 130 VGS{0ffj typ/max at min to max Vqs = 10V (Q) P# m m m m Ciss m typ (ns) 1.0 30 3.5/4.5 0.8 300 80 3.0
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2SK2406
2SK2403
2SK2404
2SK2405
2SK2407
O-220
2SK1922
2SK1923
2SK2227
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PDF
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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OCR Scan
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2SK19
2SK1923
T0-220
2SK1924
2SK2043LS
2SK2044LS
O-220FI
2SK2045LS
2SK19;
2SK1922
2SJ32C
2SK14
2SK2142
2sj320
2sj306
2SK142
2SK195
2SK2161
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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Untitled
Abstract: No abstract text available
Text: SA/iYO T0-220FI LS (Ful 1 Isolation) Outline Series S a n y o ’ s new o u t l i n e T 0 - 2 2 0 F I ( F u l 1 i s o l a t i o n a j c .Dynamic: focus : perfect isolation t y p e ) h a s a wi de v a r i e t y o f p r o d u c t s . transi stoi-s Be i n g out of
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T0-220FI
MT930622TR
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PDF
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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PDF
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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PDF
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