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    2SK171 Search Results

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    2SK171 Price and Stock

    Toshiba America Electronic Components 2SK1717

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1717 4,975 3
    • 1 -
    • 10 $1.6875
    • 100 $0.6328
    • 1000 $0.4388
    • 10000 $0.4388
    		Buy Now
    Quest Components 2SK1717 3,251
    • 1 $2.25
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $0.495
    		Buy Now
    2SK1717 728
    • 1 $1.55
    • 10 $1.55
    • 100 $0.775
    • 1000 $0.62
    • 10000 $0.62
    		Buy Now
    ComSIT USA 2SK1717 120
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SK1717(TE12L)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1717(TE12L) 825 3
    • 1 -
    • 10 $1.6875
    • 100 $0.6328
    • 1000 $0.4388
    • 10000 $0.4388
    		Buy Now
    Quest Components 2SK1717(TE12L) 660
    • 1 $2.25
    • 10 $2.25
    • 100 $0.675
    • 1000 $0.585
    • 10000 $0.585
    		Buy Now

    2SK171 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK171 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK171 Unknown FET Data Book Scan PDF
    2SK1710 Unknown FET Data Book Scan PDF
    2SK1711 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1711 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1712 Allegro MicroSystems TRANS MOSFET 60V 15A 3TO-220F Original PDF
    2SK1712 Sanken Electric TRANS MOSFET N-CH 60V 15A 3TO-220F Original PDF
    2SK1712 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1712 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1713 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1713 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1714 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1714 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1715 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1715 Sanken Electric MOSFET Selection Guide Original PDF
    2SK1716 Unknown FET Data Book Scan PDF
    2SK1717 Toshiba Original PDF
    2SK1717 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1717 Unknown Scan PDF
    2SK1717 Unknown FET Data Book Scan PDF

    2SK171 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    2SK1712

    Abstract: FM20
    Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 6.2 mJ ±60 (Tch ID (pulse) PD EAS * 150ºC)


    Original     		2SK1712 2SK1712 FM20 PDF

    2SK1717

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1717 Field Effect Transistor Industrial Applications Silicon N Channel M OSType L2-rt-MOS IV 4.6 MAX. 1.7 MAX. High Speed, High Current DC-DC Converter, - 0 Relay Drive and Motor Drive Applications Unit in mm 1,6 0.4 ±00 5


    OCR Scan     		2SK1717 600mi 0021b41 2SK1717 PDF

    2sk1712

    Abstract: FM20 8A 820
    Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 ±60 (Tch ID (pulse) PD * 150ºC) 6.2 mJ


    Original     		2SK1712 2sk1712 FM20 8A 820 PDF

    2SK1719

    Abstract: mos relay 719 irl 5a
    Text: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Industrial A p p lic a tio n s Unit in m m Silicon N Channel MOS Type l?-;t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive


    OCR Scan     		2SK1719 10OpA QQPlb45 mos relay 719 irl 5a PDF

    2SK1719

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1719 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-?r-M O S]V 2 S K 1 71 9 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE A N D M O TO R DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm


    OCR Scan     		2SK1719 2SK1719 PDF

    6 volt ldr

    Abstract: 2SK1717 Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA FIELD EFFECT TRANSISTOR 2SK1717 SILICON N CHANNEL MOS TYPE L2—7r - MOS IV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		2SK1717 2SK1717-2* 6 volt ldr 2SK1717 Field Effect Transistor Silicon N Channel MOS vdss 600 PDF

    2SK1719

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1719 Field Effect Transistor Silicon N Channel MOS Type L2-jt-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(on ) = 0.08S2 (Typ.)


    OCR Scan     		2SK1719 --60V 2SK1719 PDF

    2sk1717

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1717 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type L2-7t-MOS IV 1,6MAX 4.6MAX. High Speed, High Current DC-DC Converter, 1 7 MAX. 0.4±0.05 Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive


    OCR Scan     		2SK1717 --60V 2sk1717 PDF

    k2038

    Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
    Text: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)


    OCR Scan     		2SJ183 2SK1078 O2SJ238 2SK1717 2SK1719 2SJ239I0 2SJ315 2SJ36O 2SK2231 2SJ377 k2038 K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222 PDF

    2SK1712

    Abstract: FM20
    Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Electrical Characteristics Ratings Unit Symbol Unit max Conditions 60 V V BR DSS V I D = 250µA, VGS = 0V ±10 V I GSS ±500 nA VGS = ±10V ID ±15 A I DSS 250 µA VDS = 60V, VGS = 0V


    Original     		2SK1712 FM100 2SK1712 FM20 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Silicon N Channel MOS Type l?-rc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0 -0 8 Q (T y p .)


    OCR Scan     		2SK1719 10OpA TCH7250 0D21b45 PDF

    2SK1717

    Abstract: 2SK171
    Text: TOSHIBA Discrete Sem iconductors 2SK1717 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M O S Type l?-7t-MOS IV 1,6 4.6MAX. High Speed, High Current DC-DC Converter, 1.7 M AX. MAX 0.4 ±0-0 5 P 3 - Relay Drive and Motor Drive Applications


    OCR Scan     		2SK1717 100nA 20kii) 21b4Q D021tm 2SK1717 2SK171 PDF

    SLA5038

    Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
    Text: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419


    Original     		2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 SLA5038 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848 PDF

    2SK1723

    Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
    Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698


    OCR Scan     		2SKX698 2SK1699 1699S 2SK1700 ZSK1701 2SK1702 2SK1703 1703S 50nstyp 2SK1724 2SK1723 2SK1708 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 PDF

    Untitled

    Abstract: No abstract text available
    Text: Contents Storage, characteristic inspection, and handling precautions . 2 External dimensions . 3 Avalanche energy capability . 4 Avalanche energy capability measuring method . 5


    Original     		2SK1177 2SK1178 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK2707 2SK2708 2SK2709 PDF

    2SK1177

    Abstract: 2SK2420 2SK1180
    Text: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)


    Original     		2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 2SK1177 2SK1180 PDF

    TRANSISTOR 187

    Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60


    Original     		2SJ424 2SJ425 2SK1177 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK1185 2SK1186 TRANSISTOR 187 fkv550 2sk2943 2SK3460 2SK2710a 2SK3724 PDF

    2SK1717

    Abstract: No abstract text available
    Text: 2 SILICON N CHANNEL MOS TY P E L -tt-M O S 2 S K 1 7 1 7 H IG H SPEED, H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . D C -D C C O N VE R TE R , RELAY DRIVE A N D M O T O R D R IVE A PP LIC A TIO N S . 4-Volt Gate Drive Low Drain-Source ON Resistance : Rd S(ON =0.280 (Typ.)


    OCR Scan     		2SK1717 600mm2 2SK1717 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    2SK3460

    Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60


    Original     		2SJ424* 2SK1180 2SK1181 2SK1183 2SJ425 2SK1177 2SK1179 2SK1184 2SK1185 2SK1186 2SK3460 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent PDF

    fn651

    Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
    Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343 PDF

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 PDF