2SK160 Search Results

2SK160 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK160A-T1B-A		Renesas Electronics Corporation	Junction Field Effect Tansistors, MM, /Embossed Tape

2SK160 Price and Stock

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Rochester Electronics LLC 2SK160A-L-A SMALL SIGNAL N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK160A-L-A	Bulk			2,029	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
Renesas Electronics Corporation 2SK160A-L-A 2SK160A-L-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK160A-L-A		5,135		2,482	1 - 10 - 100 - 1000 - 10000 $0.1511	Buy Now
Rochester Electronics	2SK160A-L-A		6,535		1	1 $0.1422 10 $0.1422 100 $0.1337 1000 $0.1209 10000 $0.1209	Buy Now
Toshiba America Electronic Components 2SK1601
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1601		70			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK1603 2 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1603		18			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK160A(1)-T1B-A 2SK160A - Small Signal Field-Effect Transistor, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SK160A(1)-T1B-A		330		1	1 $0.1422 10 $0.1422 100 $0.1337 1000 $0.1209 10000 $0.1209	Buy Now

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2SK160 Datasheets (59)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK160	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK160	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK160	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK160	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK160	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK160	Unknown	FET Data Book	Scan	PDF
2SK160	Toshiba	TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB	Scan	PDF
2SK1600	Toshiba		Original	PDF
2SK1600	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1600	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1600	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1600	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1600	Unknown	FET Data Book	Scan	PDF
2SK1600	Toshiba	TRANS MOSFET N-CH 800V 3A 3TO-220AB	Scan	PDF

2SK1601	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1601	Toshiba		Original	PDF
2SK1601	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1601	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1601	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1601	Unknown	FET Data Book	Scan	PDF

2SK160 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr	Original	PDF	2SK1609 MA1U152WK
MA776 Abstract: No abstract text available Text: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. Low forward rise voltage VF and satisfactory wave detection effi- 1st Band 2nd Band ciency Temperature coefficient of forward characteristic is small.	Original	PDF	2SK1606 MA776 DO-34) MA776
Untitled Abstract: No abstract text available Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine	Original	PDF	2SK1607 MA1U152A
Untitled Abstract: No abstract text available Text: 2SK1605 Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator) high-frequency power amplification	Original	PDF	2SK1605
Untitled Abstract: No abstract text available Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 0.95 3 +0.1 in the high-speed mounting machine 1 0.4–0.05 Flat lead type, with improved mounting efficiency and solderability	Original	PDF	2SK1609 MA1U152WK
Untitled Abstract: No abstract text available Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct ● Supply 0.65 max. 14.5±0.5 reverse recovery period trr 0.85 ● Short 1.0 0.8 • Features	Original	PDF	2SK1607 MA204WK, MA205WK MA204WK
2SK1608 Abstract: No abstract text available Text: 2SK1608 Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS Unit : mm • Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 RDS(on), high-speed switching characteristic	Original	PDF	2SK1608 2SK1608
2SK1606 Abstract: No abstract text available Text: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)	Original	PDF	2SK1606 2SK1606
Untitled Abstract: No abstract text available Text: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct in radial taping manner possible M Di ain sc te on na tin nc ue e/ d ● Supply 0.65 max.	Original	PDF	2SK1607 MA204WK, MA205WK MA204WK MA205WK
MA1U152WA Abstract: MA1U152 2SK1609 Text: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 VRM Peak reverse voltage Single Forward current DC IF Double Single Peak forward current Single Non-repetitive peak forward surge current	Original	PDF	2SK1609 MA1U152WA MA1U152WA MA1U152 2SK1609
2SK1609 Abstract: 2sk16 Text: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±8	Original	PDF	2SK1609 2SK1609 2sk16
2SK1608 Abstract: 2sk16 2SK160 Text: Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±5	Original	PDF	2SK1608 2SK1608 2sk16 2SK160
MA1U152WK Abstract: 2SK1609 MA1U152 2sk16 M/MA1U152WK Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 1.5–0.05 0.95 1.9±0.1 3 0.4–0.05 +0.1 in the high-speed mounting machine ue pl d in an c se ed lud pl vi an m m es	Original	PDF	2SK1609 MA1U152WK MA1U152WK 2SK1609 MA1U152 2sk16 M/MA1U152WK
2SK1607 Abstract: SC-65 2sk16 Text: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13	Original	PDF	2SK1607 2SK1607 SC-65 2sk16

DIODE M4A Abstract: No abstract text available Text: 2SK1606 Schottky Barrier Diodes SBD MA791 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● IF(AV)=100mA rectification possible ● Fast reverse recovery time trr, optimum for high-frequency rectifica-	Original	PDF	2SK1606 MA791 100mA DIODE M4A
M2U Package Abstract: No abstract text available Text: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating	Original	PDF	2SK1605 MA127 MA122 100mA M2U Package
DIODE M4A Abstract: No abstract text available Text: 2SK1606 Schottky Barrier Diodes SBD MA793 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (series connection) of MA792 incorporated 0.425	Original	PDF	2SK1606 MA793 MA792 100mA 100mA DIODE M4A
MA789 Abstract: No abstract text available Text: 2SK1606 Schottky Barrier Diodes SBD MA789 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1	Original	PDF	2SK1606 MA789 200mA 0S-8130 100mA MA789
schottky diode marking A7 Abstract: No abstract text available Text: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-	Original	PDF	2SK1606 MA2S707 schottky diode marking A7
Untitled Abstract: No abstract text available Text: 2SK1609 Switching Diodes MA152WK Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 Anode common connection type Parameter Forward current DC Peak forward current Non-repetitive peak forward surge current VR VRM Single	Original	PDF	2SK1609 MA152WK
MA151K Abstract: MA999 SCHOTKY 2SK1605 MA704A Text: 2SK1605 Composite Diodes MA999 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Symbol Rating Unit Reverse voltage DC VR 30 Peak reverse voltage	Original	PDF	2SK1605 MA999 MA151K MA999 SCHOTKY 2SK1605 MA704A
2SK1606 Abstract: MA205WA MA204WA Text: 2SK1606 Switching Diodes MA204WA, MA205WA Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible	Original	PDF	2SK1606 MA204WA, MA205WA 2SK1606 MA205WA MA204WA
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1600 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 600 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(ON) =4.30 (Typ.)	OCR Scan	PDF	2SK1600
2SK1602 Abstract: No abstract text available Text: 2SK1602 2SK1602 o X -í 7 Í > 'T'ffl M 'Æ , ^ > Ì£ ÌJ t^ fiv > 0 : R d S(O N )=4.3 îî F5 : iYfsl = 1 . 7 S ( í ^ ) . M fifö fö iS r . ü tiÄ ^ 'fiU 'o : ID s s = 1 0 0 M ( S ^ ) (Vd S = 640V) • X . 'y > W 7 , > I > V ? 4 - ? - Ç - ï 0 : Vth = 1.5~3.5v(VDS = 10V, lD = lm A )	OCR Scan	PDF	SC-67 10//s VDD-400V, 00A/JKS 2SK1602

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2SK160 Search Results

2SK160 Result Highlights (1)

2SK160 Price and Stock

Rochester Electronics LLC 2SK160A-L-A

Renesas Electronics Corporation 2SK160A-L-A

Toshiba America Electronic Components 2SK1601

Toshiba America Electronic Components 2SK1603

Renesas Electronics Corporation 2SK160A(1)-T1B-A

2SK160 Datasheets (59)

2SK160 Datasheets Context Search

Untitled

MA776

Untitled

Untitled

Untitled

Untitled

2SK1608

2SK1606

Untitled

MA1U152WA

2SK1609

2SK1608

MA1U152WK

2SK1607

DIODE M4A

M2U Package

DIODE M4A

MA789

schottky diode marking A7

Untitled

MA151K

2SK1606

Untitled

2SK1602