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    2SJ574BPTL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -0.3A 1300Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
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    2SJ574B Price and Stock

    Hitachi Ltd 2SJ574-BPTL

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    Quest Components 2SJ574-BPTL 1,274
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    2SJ574B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)


    Original     		PDF 2SJ574 R07DS0574EJ0400 ADE-208-739B) PLSP0003ZB-A

    2SJ574B

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)


    Original     		PDF 2SJ574 R07DS0574EJ0400 ADE-208-739B) PLSP0003ZB-A 2SJ574B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ574 Silicon P Channel MOS FET High Speed Switching R07DS0574EJ0500 Rev.5.00 Jan 10, 2014 Features • Low on-resistance RDS = 1.1 Ω typ. VGS = –10 V, ID = –150 mA RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device.


    Original     		PDF 2SJ574 R07DS0574EJ0500 PLSP0003ZB-A