2SJ505STL Search Results

2SJ505

Abstract: 2SJ505L-E PRSS0004AE-A
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0400 (Previous: ADE-208-547B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ505

Abstract: 2SJ505L-E PRSS0004AE-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ505

Abstract: 2SJ505L-E PRSS0004AE-A 2SJ505STL
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.