2SJ440 Search Results

Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR 3 « war ; v \ A• SILICON P CHANNEL MOS TYPE d■ O - V■ Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION 15.a±0.5^jZÍ3.6±0-2 V•n c o = _ -i a n-v A High Breakdown Voltage 1700 • High Forward Transfer Admittance : |Yf^| =4.0S Typ.

2SJ440

Abstract: Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)

2SJ440

Contextual Info: T O SH IB A 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y AUDIO FREQUENCY POWER AMPLIFIER APPLICATION U nit in mm 1 5 .8 ± 0 .5 • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)

toshiba lot number type

Abstract: 2f3 transistor 2SJ440-Y 2-16F1B 2SJ440 Toshiba 2SJ
Contextual Info: T O S H IB A 2SJ440-Y 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)

toshiba marking code transistor

Abstract: 2SJ440 Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SJ440-Y

Abstract: Toshiba 2SJ
Contextual Info: TO SH IB A 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ44Q-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V j g s = —180V High Forward Transfer Admittance : |Yfs|=4.0S Typ.) MAXIMUM RATINGS (Ta = 25°C)

2SJ440

Abstract: Toshiba 2SJ
Contextual Info: 2SJ440 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ440 Audio Frequency Power Amplifier Application • High breakdown voltage: VDSS = −180 V • High forward transfer admittance: |Yfs| = 4.0 S typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2f3 transistor

Abstract: 2SJ440-Y Toshiba 2SJ
Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V]}gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)

2SJ440

Abstract: toshiba marking Toshiba 2SJ
Contextual Info: TO SH IBA 2SJ440 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage : V ßgg = —180 V High Forward Transfer Admittance : |Yfs| = 4.0 S Typ. MAXIMUM RATINGS (Ta = 25°C)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3