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    2SJ387 Price and Stock

    Rochester Electronics LLC 2SJ387L-E

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ387L-E Bulk 155
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    Rochester Electronics LLC 2SJ387STL-E

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ387STL-E Bulk 115
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    Renesas Electronics Corporation 2SJ387STL-E

    2SJ387STL-E
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    Verical 2SJ387STL-E 8,800 127
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    2SJ387STL-E 5,697 127
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    Rochester Electronics 2SJ387STL-E 14,497 1
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    Renesas Electronics Corporation 2SJ387L(E)

    Trans MOSFET P-CH Si 20V 10A 3-Pin(3+Tab) DPAK(L)-(2) Box
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    Verical 2SJ387L(E) 446 171
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    Renesas Electronics Corporation 2SJ387L-E

    2SJ387 - Power Field-Effect Transistor, 10A, 20V, P-Channel MOSFET '
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    Rochester Electronics 2SJ387L-E 446 1
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    Find more 2SJ387 price and stock on Findchips.com

    2SJ387 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ387 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387 Renesas Technology FET Transistor, Silicon P-Channel MOS FET Original PDF
    2SJ387 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ387(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ387L Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ387L Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387(L) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387L Renesas Technology FET Transistor, Silicon P-Channel MOS FET Original PDF
    2SJ387L Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387L Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ387L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ387L-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ387(L)-(S) Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387(L)/(S) Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ387S Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ387S Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ387S Kexin P-Channel MOSFET Original PDF
    2SJ387(S) Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ387 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline


    Original     		2SJ387 Hitachi 2SJ Hitachi DSA002779 PDF

    2SJ387S

    Abstract: TR325
    Text: IC MOSFET SMD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		2SJ387S O-252 2SJ387S TR325 PDF

    2SJ387

    Abstract: Hitachi DSA00347
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline


    Original     		2SJ387 Hitachi DSA00347 PDF

    2SJ387

    Abstract: Hitachi DSA00316
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET ADE-208-1196 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter


    Original     		2SJ387 ADE-208-1196 Hitachi DSA00316 PDF

    2SJ387

    Abstract: No abstract text available
    Text: 2SJ387 L , 2SJ387 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 Features 4 12 • Low on–resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC – DC


    Original     		2SJ387 PDF

    2sj387

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter


    Original     		2SJ387 D-85622 Hitachi 2SJ Hitachi DSA001651 PDF

    2SJ387STL-E

    Abstract: REJ03G0862-0200 2SJ387 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak
    Text: 2SJ387 L , 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source


    Original     		2SJ387 REJ03G0862-0200 ADE-208-1196) PRSS0004ZD-B PRSS0004ZD-C 2SJ387STL-E REJ03G0862-0200 2SJ387L-E PRSS0004ZD-B PRSS0004ZD-C *0862 dpak PDF

    2SJ387

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    2SJ387

    Abstract: 2SJ387L-E 2SJ387STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    2SJ38

    Abstract: No abstract text available
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		2SJ387 2SJ38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ387 L , 2SJ387 S Silicon P C h a n n e l M O S F E T Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		2SJ387 2SJ387 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		2SJ387 PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF

    transistor 2sk

    Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
    Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k


    OCR Scan     		2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 PDF