Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET For analog switch circuits • Package ■ Features M Di ain sc te on na tin nc ue e/ d • Code SMini3-G1 • Pin Name
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2002/95/EC)
2SJ0364
2SJ364)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2
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2002/95/EC)
2SJ0364
2SJ364)
SC-70
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2SJ364
Abstract: 2SJ0364
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Code SMini3-G1 • Pin Name • Low ON resistance • Low-noise characteristics
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2002/95/EC)
2SJ0364
2SJ364)
2SJ364
2SJ0364
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
2SJ0364
2SJ364)
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2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10
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2SJ0364
2SJ364)
2SJ0364
2SJ364
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2SJ0364
Abstract: 2SJ364 VDSV
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch unit: mm 2.1±0.1 • Features 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 ● Low ON-resistance ● Low-noise characteristics 3 2 V
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2SJ0364
2SJ364)
2SJ0364
2SJ364
VDSV
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2SJ0364
Abstract: 2SJ364
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For analog switch circuits • Package ■ Features ue pl d in an c se ed lud
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2002/95/EC)
2SJ0364
2SJ364)
2SJ0364
2SJ364
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2SJ364
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ364 Silicon P-Channel Junction FET For analog switch unit: mm 2.1±0.1 • Features 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 ● Low ON-resistance ● Low-noise characteristics 3 2 ■ Absolute Maximum Ratings (Ta = 25°C)
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2SJ364
SC-70
2SJ364
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2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low ON resistance • Low-noise characteristics 0.9±0.1
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2SJ0364
2SJ364)
SC-70
2SJ0364
2SJ364
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2SJ0364
Abstract: 2SJ364
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For analog switch circuits • Package ■ Features ue pl d in an c se ed lud
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2002/95/EC)
2SJ0364
2SJ364)
2SJ0364
2SJ364
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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3sk fet
Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663
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OCR Scan
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2SJ364
2SK123
2SK662
2SK663
2SK301
3sk fet
3SK192
K305A
3sk268 fet
2SK1860
2SK A 1103
2sk to-92
SJ163
2sk type
3sk301
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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OCR Scan
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PDF
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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