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    2SJ313 Search Results

    2SJ313 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ313
    		Toshiba TRANS MOSFET P-CH 180V 1A 3(2-10R1B) Original PDF
    2SJ313
    		Toshiba Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (max 5); I_S (A): (max -1) Original PDF
    2SJ313
    		Toshiba Original PDF
    2SJ313
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ313
    		Toshiba Silicon P channel field effect transistor for audio frequency power amplifier applications Scan PDF
    2SJ313O
    		Toshiba 2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Original PDF
    2SJ313-O
    		Toshiba 2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Original PDF
    2SJ313O
    		Toshiba TRANS MOSFET P-CH 180V 1A 3(2-10R1B) Original PDF
    2SJ313Y
    		Toshiba 2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Original PDF
    2SJ313-Y
    		Toshiba 2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power Original PDF
    2SJ313Y
    		Toshiba TRANS MOSFET P-CH 180V 1A 3(2-10R1B) Original PDF
    2SJ313-Y(Q)
    		Toshiba 2SJ313 - Trans MOSFET P-CH 180V 1A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SJ313 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Toshiba 2SJ

    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B Toshiba 2SJ PDF

    2sk2013 2SJ313

    Abstract: 2SJ313 2SK2013
    Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2sk2013 2SJ313 PDF

    k2013

    Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ PDF

    2SJ313

    Abstract: 2SK2013 SC-65
    Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2SK2013 SC-65 PDF

    transistor C1000 Toshiba

    Abstract: 2SJ313 2SK2013 SV125
    Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125 PDF

    2sk2013 2SJ313

    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B 2sk2013 2SJ313 PDF

    2SJ313

    Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
    Contextual Info: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 2SJ313 MARKING SG toshiba transistor marking 4D PDF

    2SJ313

    Abstract: 2SK2013 2sk2013 2SJ313
    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 PDF

    2sk2013 2SJ313

    Abstract: transistor marking 9D
    Contextual Info: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR 1 SILICON P CHANNEL MOS TYPE <; I mm 3 mm m 1 3 m mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • High Breakdown Voltage : V d SS—_ 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 100ms* 2sk2013 2SJ313 transistor marking 9D PDF

    2sk2013

    Contextual Info: TOSHIBA 2SK2013 2 S K2 0 1 3 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj}gg= 180V High Forward Transfer Admittance : |Yfg| = 0.7S Typ. Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2sk2013 PDF

    Contextual Info: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 --180V PDF

    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B PDF

    K2013

    Abstract: JEITA SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 SC 0816
    Contextual Info: 2SK2013 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2013 ○ 低周波電力増幅用 単位: mm : VDSS = 180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SJ313 とコンプリメンタリになります。


    Original     		2SK2013 2SJ313 SC-67 2-10R1B K2013 2002/95/EC) K2013 JEITA SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 SC 0816 PDF

    EH 14 A

    Abstract: 2SJ313 2SK2013
    Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 EH 14 A PDF

    2SK2013

    Abstract: K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ
    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 2SK2013 K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ PDF

    2sk2013 2SJ313

    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Tc = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2sk2013 2SJ313 PDF

    2SJ313

    Abstract: 2SK2013 Toshiba 2SJ
    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 2SK2013 Toshiba 2SJ PDF

    Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SK2013 2SJ313 PDF

    toshiba marking code transistor

    Abstract: 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ
    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B toshiba marking code transistor 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ PDF

    Contextual Info: 2SJ313 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • 10 ì 0.3 High Breakdown Voltage : V D g g = —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 PDF

    2SJ313

    Abstract: J313 2SK2013 Toshiba 2SJ
    Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 J313 2SK2013 Toshiba 2SJ PDF

    J313

    Abstract: 2SJ313 2SK2013
    Contextual Info: 2SJ313 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ313 ○ 低周波電力増幅用 • 単位: mm : VDSS = −180 V 高耐圧です。 • 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 • 2SK2013 とコンプリメンタリになります。


    Original     		2SJ313 2SK2013 SC-67 2-10R1B J313 2SJ313 2SK2013 PDF

    2sk2013 2SJ313

    Abstract: 2SJ313 2SK2013 K2013 toshiba pb includes
    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 2sk2013 2SJ313 2SJ313 2SK2013 K2013 toshiba pb includes PDF

    2SK2013

    Abstract: Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ
    Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B 2SK2013 Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ PDF