2SJ31 Search Results

Contextual Info: TOSHIBA 2SJ312 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon P Channel MOS Type L2-7i-MOS IV High Speed, High Current Switching Applications Features • 4-Volt G ate Drive • Low Drain-Source O N R esistance - r d s (ON) = S O m Q (Typ.)

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

2SJ319S

Contextual Info: IC MOSFET SMD Type Silicon P-Channel MOSFET 2SJ319S TO-252 Features Low on-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 High speed switching 3.80

A0764

Abstract: 2SJ314-01L T151 Scans-0063210
Contextual Info: 2SJ314-01L, S FUJI POWER MOS-FET P-CHANNEL SILICON POWER MOS-FET _ -FAP-III SERIES • Features Outline Draw ings • Hiyh current • Low on-resistance • No secondary breakdown • Low driving power • Hiyh forward Transconductance

Contextual Info: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

Contextual Info: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS U n it in mm 4-Volt G ate Drive Low D rain-Souree ON R esistance : R d S(ON) —0 .2 5 0 (Typ.) H igh F orw ard T ransfer A dm ittance : |Yfs| = 3 .0 S (Typ.)

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline 2SJ319(L), 2SJ319(S)

2sj317

Abstract: Hitachi 2SJ Hitachi DSA002779
Contextual Info: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317

2SJ314-01

Abstract: 2SJ314-01L T151
Contextual Info: 2SJ314-01LS FUJI POW ER M OS-FET P-CHANNEL SILICON POWER MOS-FET FAP-III S E R IE S I Features Outline Drawings »Hiyh current *Low on-resistance »No secondary breakdown ►Low driving power »High forward Transconductance »Avalanche-proof ¡Applications

EN4309

Abstract: 2SJ316
Contextual Info: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

"Power MOSFET"

Abstract: 2SJ314-01L
Contextual Info: 2SJ314-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof K-Pack L K-Pack(S) Applications

Contextual Info: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.)

Toshiba 2SJ

Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)

2SJ312

Abstract: J312 A J312 toshiba j312
Contextual Info: 2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ312 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance

Contextual Info: 2SJ317-Silicon P Channel MOSFET OIV-L Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Table 1 Absolute M axim um Ratings (Ta = 25°C)

2SJ311

Abstract: 2SJ331 MP-88 Field Effect Transistors 2sj33
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SJ331 P チャネル パワーMOS FET スイッチング用 2SJ311 は，P チャネルパワーMOS FET でオン抵抗が低く，スイッチング特性が優れており，各種アクチュエータ

Contextual Info: 2SJ314-01L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition)10m Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

2sk2013 2SJ313

Abstract: 2SJ313 2SK2013
Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313

2SJ316

Abstract: VDS101
Contextual Info: Ordering number: EN 4309 2SJ316 No.4309 P-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

k2013

Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)

2SJ313

Abstract: 2SK2013 SC-65
Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313

transistor C1000 Toshiba

Abstract: 2SJ313 2SK2013 SV125
Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013

2SJ312

Contextual Info: T O S H IB A 2SJ312 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL 10.3MAX.