2SJ287 Search Results

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

2SJ469

Contextual Info: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5

AX8896

Contextual Info: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage

smd marking JD

Abstract: MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking
Contextual Info: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1

EN4307

Abstract: 2SJ287
Contextual Info: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2062a

Abstract: 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389
Contextual Info: 注文コード No.N 4 3 0 7 A 2SJ287 No. 4 3 0 7 A 61599 半導体ニューズ No.4307 とさしかえてください。 2SJ287 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

Contextual Info: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SJ287

Abstract: J600C
Contextual Info: Ordering number: EN 4307 No.4307 _ 2SJ287 P-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

2sc3153

Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator

Contextual Info: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^