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Panasonic Electronic Components ERG-2SJ201 RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ201V RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201V	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ201A RES 200 OHM 5% 2W AXIAL
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DigiKey	ERG-2SJ201A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERG-2SJ201A	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
MAT ERG2SJ201A
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Bristol Electronics	ERG2SJ201A		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components ERG2SJ201V
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NexGen Digital	ERG2SJ201V		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SJ201 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ201	Toshiba	TRANS MOSFET P-CH 200V 12A 3(2-21F1B)	Original	PDF
2SJ201	Toshiba	Pch Power MOSFET; ; Package: TO-3P(L); R DS On (max 0.625); I_S (A): (max -12)	Original	PDF
2SJ201	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ201	Toshiba		Original	PDF
2SJ201	Unknown	FET Data Book	Scan	PDF
2SJ201	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ201	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ201O	Toshiba	Silicon P-Channel MOS Type	Original	PDF
2SJ201-O	Toshiba	2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ201Y	Toshiba	TRANS MOSFET P-CH 200V 12A 3(2-21F1B)	Original	PDF
2SJ201-Y	Toshiba	2SJ201 - TRANSISTOR 12 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF

2SJ201-Y(F)	Toshiba	2SJ201 - MOSFETs MOSFET P-Ch 200V 12A Rdson 0.625 Ohm	Original	PDF
2SJ201-YF	Toshiba	2SJ201 - Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-3PL	Original	PDF

2SJ201 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ201 Abstract: 2SJ20 Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 2SK1530	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba	PDF
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ	PDF
2SK1530 Abstract: 2SJ201 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes	PDF
Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	2SK1530 2SJ201	PDF
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 2SK1530·	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B	PDF
2SK1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2-21F1B 2SK1530 2SJ201 Toshiba 2SJ	PDF
toshiba pb includes Abstract: 2SJ201 2SK1530 Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B toshiba pb includes 2SJ201 2SK1530	PDF
Contextual Info: T O SH IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 SILICON N CHANNEL MOS TYPE 5 3 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : V]3gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201	PDF
Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : \|Yfg\| = 5.0S Typ. Complementary to 2SK1530	OCR Scan	2SJ201 20-5MAX. --200V 2SK1530	PDF

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss 200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : \|Yfs \| 5.0S(TYP.) . Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 Tc-25	PDF
2Sj201 Abstract: 2SK1530 Contextual Info: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SK1530	OCR Scan	2SJ201 -200V 2SK1530 2Sj201	PDF
Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)	Original	2SK1530 2SJ201 2-21F1B Toshiba 2SJ	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)	Original	2SJ201 2SK1530 2-21F1B	PDF
2SJ201 Abstract: 2SK1530 Contextual Info: TO S H IB A 2SJ201 TO SH IBA FIELD EFFECT TRANSISTOR SILICON P C H A N N EL M O S TYPE 2SJ201 HIGH PO W ER AM PLIFIER APPLICATION U n it in mm 2 0 .5 M A X . • H ig h Bre a k d o w n V o ltag e • H ig h F o rw a rd T ran sfer A d m ittan ce : \|Yfs\|= 5 .0 S Typ.	OCR Scan	2SJ201 2SK1530	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: 2SK1530 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。	Original	2SK1530 2SJ201 2-21F1B 2002/95/EC) 2SK1530 2SJ201	PDF
toshiba marking code transistor Abstract: 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B toshiba marking code transistor 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook	PDF
2N3904 Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150 Contextual Info: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13	OCR Scan	2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150	PDF
Contextual Info: TOSHIBA 2SJ201 Field Effect T ra n sisto r S ilic o n P C h a n n el M O S Typ e L 2-ti-MOS II High Pow er A m p lifier A p p lica tio n F e a tu re s • High Breakdown Vortage - VDSS = -200V (Min.) • High Forward Transfer Admittance - Yfs' = 5.OS (Typ-)	OCR Scan	2SJ201 -200V 2SK1530	PDF
2SJ20 Abstract: 2SK1530 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2-21F1B 2SJ20 2SK1530 2SJ201 Toshiba 2SJ	PDF

2SJ201 Search Results

2SJ201 Price and Stock

Panasonic Electronic Components ERG-2SJ201

Panasonic Electronic Components ERG-2SJ201V

Panasonic Electronic Components ERG-2SJ201A

MAT ERG2SJ201A

Panasonic Electronic Components ERG2SJ201V

2SJ201 Datasheets (16)

2SJ201 Datasheets Context Search

2SJ201

2SK1118

2SJ201

2SK1530

Toshiba 2SJ

2sk1530

2SK1530

2SK1530

toshiba pb includes

2Sj201

Toshiba 2SJ

2SJ201

2SK1530

toshiba marking code transistor

2N3904

2SJ20