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TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	ROX2SJ200K	Cut Tape	6,482		1	1 $0.27 10 $0.172 100 $0.1142 1000 $0.0885 10000 $0.0885	Buy Now
	ROX2SJ200K	Ammo Pack	5,000		1,000	1 - 10 - 100 - 1000 $0.08007 10000 $0.06015	Buy Now
Avnet Americas	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ200K		12,802			1 $0.27 10 $0.172 100 $0.115 1000 $0.067 10000 $0.06	Buy Now
Newark	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.058	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ200K					1 - 10 - 100 - 1000 $0.0727 10000 $0.0548	Buy Now
Panasonic Electronic Components ERG-2SJ200 RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.0619 10000 $0.0458	Buy Now
Master Electronics	ERG-2SJ200		1,000			1 - 10 - 100 - 1000 $0.0619 10000 $0.0458	Buy Now
Panasonic Electronic Components ERG-2SJ200V RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200V	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ200A RES 20 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ200A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERG-2SJ200A	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc RF086-92SP-92SJ-2000 "50 OHM .086 RF MILLIMETER WAVE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF086-92SP-92SJ-2000	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SJ200 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF
2SJ200	Toshiba		Original	PDF
2SJ200	Unknown	FET Data Book	Scan	PDF
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF
2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF

2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF

2SJ200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2SJ200	PDF
Contextual Info: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	2SJ200 2SK1529	PDF
2SK1529 Abstract: K1529 2SJ200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	2SK1529 2SJ200 2-16C1B K1529	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
2S1206 Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201 Contextual Info: - 24 - « tt m £ & m m f t ? 1 K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS	OCR Scan	Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ214 2SJ201	PDF
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ	PDF
2SJ200 Abstract: 2SK1529 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529	PDF
toshiba j200 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- \|l\| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss	OCR Scan	2SJ200 2SK1529 toshiba j200 2SJ200 SC-65	PDF
Contextual Info: TOSHIBA 2SJ200 T O S H IB A FIELD EFFECT TR A N S IS TO R SILIC O N P C H A N N E L M O S TYPE 2SJ200 Unit in mm H IG H P O W E R A M P L IF IE R A P P L IC A T IO N • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.)	OCR Scan	2SJ200 2SK1529	PDF
c 111 transistor Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor	PDF

2SJ200 Abstract: 6C1B Contextual Info: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) r . . Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 2SJ200 6C1B	PDF
Contextual Info: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.) Complementary to 2SK1529	OCR Scan	2SJ200 --180V 2SK1529	PDF
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200	PDF
2SJ200 Abstract: 2SK1529 transistor application Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ	PDF
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ	PDF
2SJ200 Abstract: 2SJ20 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20	PDF
toshiba j200 Contextual Info: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : \|Yfg\| = 4.0S Typ. Complementary to 2SK1529	OCR Scan	2SJ200 toshiba j200	PDF
Contextual Info: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4.0S Typ. • Complementary to 2SK 1529	OCR Scan	2SJ200 --180V SC-65 2-16C1B	PDF
k1529 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : \|Yfs\|= 4.0S Typ.) • Com plem entary to 2SJ200	OCR Scan	2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65	PDF
Contextual Info: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SK1529 2SJ200	PDF

2SJ200 Search Results

2SJ200 Price and Stock

TE Connectivity ROX2SJ200K

Panasonic Electronic Components ERG-2SJ200

Panasonic Electronic Components ERG-2SJ200V

Panasonic Electronic Components ERG-2SJ200A

Samtec Inc RF086-92SP-92SJ-2000

2SJ200 Datasheets (17)

2SJ200 Datasheets Context Search

2SK1118

TRANSISTOR bH-10

2SK1529

2SK1529

2SK1529

2S*1206

K1529

2SJ200

toshiba j200

c 111 transistor

2SJ200

K1529

2SJ200

K1529

2SJ200

toshiba j200

k1529