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    2SD80 Search Results

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    2SD80 Price and Stock

    Samtec Inc MTSW-104-12-S-D-800

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    Samtec Inc DW-10-12-S-D-800

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    JRH Electronics DW-10-12-S-D-800

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    Samtec Inc MTSW-113-12-S-D-800

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    JRH Electronics MTSW-113-12-S-D-800

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    2SD80 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD80 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD80 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD80 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD80 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD80 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD80 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD80 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD80 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD80 Unknown Cross Reference Datasheet Scan PDF
    2SD800 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD800 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD800 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD800 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD800 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD800 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD800 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD800 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SD80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)900 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD802

    Untitled

    Abstract: No abstract text available
    Text: 2SD803 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF 2SD803

    Untitled

    Abstract: No abstract text available
    Text: 2SD806 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC) h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)50


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    PDF 2SD806

    2SB731

    Abstract: 2SD809
    Text: SavantIC Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage · APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING


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    PDF 2SB731 O-126 2SD809 curr-50mA -50mA -10mA 2SB731 2SD809

    Untitled

    Abstract: No abstract text available
    Text: 2SD809 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD809 Freq85M

    Untitled

    Abstract: No abstract text available
    Text: 2SD80 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD80 time1200nÃ

    2SD883A

    Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150


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    PDF 2SD801 2SD802 2SD803 2SD804 70kHz 2SD805 2SD806 2SD807 2SD808 2SD809 2SD883A 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815

    2SD809

    Abstract: 2SB731
    Text: Inchange Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING


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    PDF 2SB731 O-126 2SD809 -50mA -10mA 2SD809 2SB731

    Untitled

    Abstract: No abstract text available
    Text: 2SD807 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800è V(BR)CBO (V)1.2k I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD807

    2SD805

    Abstract: 2SD80
    Text: 2SD805 保守品) FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON NPN三重拡散プレーナ形 ハイパワーダーリントン 外形寸法 : Outline Drawings 外形寸法: 特長 :Features 特長: hFE が高い


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    PDF 2SD805( TC-19, TB-30A TB-30 2SD805 2SD80

    2SD806

    Abstract: 2SD80 TB30
    Text: 2SD806 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH CURRENT NPN三重拡散プレーナ形 高耐圧大電流、高速スイッチング用 HIGH SPEED SWITCHING 外形寸法 : Outline Drawings 外形寸法: 特長 :Features


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    PDF 2SD806 TC-19 TB-30 200mA 2SD806 2SD80 TB30

    2SD806

    Abstract: No abstract text available
    Text: 2SD806 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH CURRENT NPN三重拡散プレーナ形 高耐圧大電流、高速スイッチング用 HIGH SPEED SWITCHING 外形寸法 : Outline Drawings 外形寸法: 特長 :Features


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    PDF 2SD806 TC-19 TB-30 200mA 2SD806

    Untitled

    Abstract: No abstract text available
    Text: 2SD801 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)375 V(BR)CBO (V)800 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SD801

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sb405

    Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100


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    PDF 2SD11 2SD12 2SD13 2SD14 2SD15 2SD16 2SD17 2SD18 2SD19 2SD20 2sb405 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92

    2SD737

    Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705


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    PDF 2SD701 2SD702 2SD703 2SD704 2SD705 2SD706 2SD707 2SD708 2SD709 2SD710 2SD737 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2SD809

    Abstract: 2SB731 H150 B731
    Text: 2SB731 /2 S D 8 0 9 1 2SB731 2SD809(1 ) P N P /N P N i t ’ 9 P N P /N P N Silicon Epitaxial T ransistor Audio Frequency Power A m plifier '> i) = ! > t = 7 ' ^ ' > 7 . 9 Low Speed S w itching ffijs » m ti mm ts * y y y ’ Vy'i y\ o i- j'F f'f- /, ') u -


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    PDF 2SB731 2SD809 2SD809 H150 B731

    2SD804

    Abstract: 2SB747 2SD803 2SD812
    Text: P A N A S O N I C IN] L/ELEK{SEni> 72C D | t,^32flS4 □ 0 0 c13c17 fl | ~ D f . 3 y. * 2SD803 = 5 y V 7 ,5 > h 2SD803 v - 1) If M / S i N P N Diffused Junction M esa NPN Power Amplifier • $$ ^¡[/F eatures • i£WcWi&S-*}-ffiSkcotzfr&£M1¥ffiM ASO) W id e a r e a o f sa fe o p e ra tio n re a liz e d by d iffu sed ju n c tio n m e s a s tru c tu re .


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    PDF 2SD803 01--I 100X100 2SD804 2SB747 2SD803 2SD812

    2SD801

    Abstract: 25D8 EBG HVT 8 2SD802
    Text: 2SD801,2SD802 SILICON NPN TRIPLE DIFFUSED -> >ja>N P N E .sm m m HIGH SPEED AND HIGH CURRENT SWITCHING & k x m ì m z i, 7 f > s i — X Base = v 9 Em itter 3 u ? : C ollector y — X, (Case) ( D im e n s io n s in mm) (JEDEC TO-3) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)


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    PDF 2SD801 2SD802 rc-25 Ta-25Â 2SD801 2SD802 Vcc-250V 25D8 EBG HVT 8

    LE 50

    Abstract: 2SD806 A146
    Text: 2SD806 fö3!"n TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON /M V < 7 raffiÎŒ, ^lUSiE, H IG H VOLTAGE, H IG H C U R R E N T, S W IT C H IN G • # - fi : Features • hFE*''Sv,' High D. C. current gain • Low saturation voltage • A S O ^ / A t' • A f if U Ê


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    PDF 2SD806( 200mA 50//s LE 50 2SD806 A146

    2SC2770

    Abstract: 2SC2930 ETN36-030 2SC2443 2SD806 ET125 ET127 ETM36-030 ETN01-055 ETN31-055
    Text: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.


    OCR Scan
    PDF 2SC2930 2SC2443 MD-18 ET127 2SC2770 ETN01-055 ETN31-055 ETM36-030 ETN36-030 ET1257 2SD806 ET125

    2SC2930

    Abstract: 2SC2770 ET127 ETN01-055 2SC2443 2SD806 ET125 ETM36-030 ETN31-055 ETN36-030
    Text: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.


    OCR Scan
    PDF 2SC2930 2SC2443 MD-18 ET127 2SC2770 ETN01-055 ETN31-055 ETM36-030 ETN36-030 ET1257 2SD806 ET125

    2SB737

    Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
    Text: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4


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    PDF 2SD743 2SD743A 2SD755 2SD756 2SD756A 2SD757 150mV 2SB737 2SD786S 2SB738 2SB737 2SD786 EL 14v 4c 2SD758B 2SB733 2SD758 2SD772 2SD786S 2sd797