2sd649
Abstract: transistor 649A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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O-126C
2SB649/2SB649A
2SD669/A
2SB649
2SB649A
-160V
-10mA
-150mA
2sd649
transistor 649A
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PDF
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2Sd649A
Abstract: transistor 649A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage
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Original
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O-126C
2SB649/2SB649A
O-126C
2SB649
2SB649A
-10mA
-160V
-150mA
2Sd649A
transistor 649A
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PDF
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2Sd649A
Abstract: 0038a 2sb649a
Text: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc $ 25°C TO-126 ABSOLUTE M AXIM U M RATINGS TA = 25 °C Item Symbol 2SB649A Unit Collector to base voltage V CBO -180 V Collector to emitter voltage V CEO -160 V
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OCR Scan
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PJB649A
PJD669A
O-126
2SB649A
2SD649A
0038a
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PDF
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