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    2SD268 Search Results

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    2SD268 Price and Stock

    ROHM Semiconductor 2SD2687STP

    TRANS GP BJT NPN 12V 5A 3-PIN SP
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    DigiKey 2SD2687STP Reel
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    Verical 2SD2687STP 5,000 650
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    • 1000 $0.1125
    • 10000 $0.1063
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    Quest Components 2SD2687STP 4,000
    • 1 $0.77
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    • 1000 $0.231
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    CoreStaff Co Ltd 2SD2687STP 5,000
    • 1 $0.081
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    • 100 $0.077
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    Toshiba America Electronic Components 2SD2686(TE12L,ZC)

    Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SD2686(TE12L,ZC) 833 111
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    2SD2686(TE12L,ZC) 795 242
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    Quest Components 2SD2686(TE12L,ZC) 636
    • 1 $0.79
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    Chip1Stop 2SD2686(TE12L,ZC) Cut Tape 833
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    2SD268 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD268 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD268 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD2686 Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: Low-Frequency Power Transistor; Application Scope: driver(Darlington output); Comments: Darlington; H_FE: (max 1.5 @I_C=1A, I_B=1mA) Original PDF
    2SD2687S ROHM Low frequency amplifier, storobo Original PDF
    2SD2687STP ROHM Low VCE (sat) Transistor; Package: SPT; Constitution materials list: Packing style: Ammo Box; Package quantity: 5000; Original PDF
    2SD2688LS Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF
    2SD2689LS Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF

    2SD268 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SD2686

    2SD2687S

    Abstract: No abstract text available
    Text: 2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S zDimensions Unit : mm zApplication Low frequency amplifier Storobo zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN)


    Original     		PDF 2SD2687S 250mV 2SD2687S

    2SD2687S

    Abstract: No abstract text available
    Text: 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zExternal dimensions Unit : mm zApplication Low frequency amplifier Storobo 2.0 (15Min.) 3Min. 3.0 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA 0.45


    Original     		PDF 2SD2687S 15Min. 250mV 2SD2687S

    ic 4043

    Abstract: 2SD2688 2SD2688LS
    Text: Ordering number : ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7526 2SD2688LS 2079D 2SD2688LS] O-220FI ic 4043 2SD2688 2SD2688LS

    2SD2686

    Abstract: No abstract text available
    Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


    Original     		PDF 2SD2686 2SD2686

    2SD2686

    Abstract: 2SD268 2sd26
    Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


    Original     		PDF 2SD2686 2SD2686 2SD268 2sd26

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER  DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


    Original     		PDF 2SD2686 2SD2686 2SB2686G-x-AB3-R OT-89 QW-R208-050

    2sd2689

    Abstract: 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527
    Text: Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		PDF ENN7527 2SD2689LS 2079D 2SD2689LS] O-220FI 2sd2689 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    2SD2687S

    Abstract: bjt npn
    Text: SPICE PARAMETER 2SD2687S by ROHM TR Div. * 2SD2687S NPN BJT model * Date: 2006/12/14 .MODEL 2SD2687S NPN + IS=3.0000E-12 + BF=463.17 + VAF=30.958 + IKF=7.4258 + ISE=3.0000E-12 + NE=2.1623 + BR=219.58 + VAR=100 + IKR=1.6647 + ISC=3.0000E-12 + NC=2.0433 + NK=.49844


    Original     		PDF 2SD2687S Q2SD2687S 0000E-12 000E-3 594E-3 67E-12 96E-12 2SD2687S bjt npn

    2SD2686

    Abstract: No abstract text available
    Text: 2SD2686 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2686 ○ ソレノイドドライブ用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 0.5 A)


    Original     		PDF 2SD2686 SC-62 20070701-JA 2SD2686

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER „ DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


    Original     		PDF 2SD2686 2SD2686 2SD2686L-AB3-R 2SD2686G-AB3-R OT-89 QW-R208-050

    Untitled

    Abstract: No abstract text available
    Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base


    Original     		PDF 2SD2686 SC-62

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    2SD297

    Abstract: 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SD201 90 6 6A 2SD202 110 6 6A 2SD203 130 6 6A 2SD204 60 5 700 2SD205 60 5 700 2SD206 50 8 10A 2SD206A 50 8 10A 2SD207 100 8 10A 2SD207A 100 8 10A 2SD208 150 8 10A 2SD208A 150


    Original     		PDF 2SD201 2SD202 2SD203 2SD204 2SD205 2SD206 2SD206A 2SD207 2SD207A 2SD208 2SD297 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N