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    2SD244 Price and Stock

    ROHM Semiconductor 2SD2444KT146R

    TRANS NPN 15V 1A SMT3
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    2SD2444KT146R Cut Tape 370 1
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    Verical 2SD2444KT146R 1,750 481
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    CoreStaff Co Ltd 2SD2444KT146R 1,750
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    Panasonic Electronic Components 2SD244100L

    TRANS NPN 10V 1.5A MINIP3-F1
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    2SD244 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD244 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD244 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD244 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD244 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD244 Unknown Cross Reference Datasheet Scan PDF
    2SD244 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD244 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD244 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD244 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD244 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2440 Toshiba NPN Transistor Original PDF
    2SD2440 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2440 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2440 Toshiba Silicon NPN transistor for switching applications Scan PDF
    2SD2440 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SD2440BL NEC Silicon NPN Transistor Scan PDF
    2SD2441 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD2441 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2441 Panasonic NPN Transistor Original PDF
    2SD2441 TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-89 Original PDF

    2SD244 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2440

    Abstract: No abstract text available
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)


    Original     		PDF 2SB1590K -20mA. 2SD2444K. 2SB1590K

    Untitled

    Abstract: No abstract text available
    Text: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K zFeatures 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1)


    Original     		PDF 2SD2444K 2SB1590K. 2SD2444K

    2sb1590

    Abstract: 2SB1590K 2SD2444K T146
    Text: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)


    Original     		PDF 2SB1590K -20mA. 2SD2444K. 2sb1590 2SB1590K 2SD2444K T146

    2SD2444K

    Abstract: hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type Power Transistor 2SD2444K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 IC = 1A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF 2SD2444K OT-23 400mA/20mA -50mA, 100MHz 2SD2444K hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K Features 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. External dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1) 0.3Min.


    Original     		PDF 2SD2444K 2SB1590K.

    D218

    Abstract: 2SB1590K 2SD2444K B218
    Text: Transistors 2SB1590K 2SD2444K 96-150-B218 (96-247-D218) 293


    Original     		PDF 2SB1590K 2SD2444K 96-150-B218) 96-247-D218) D218 2SB1590K 2SD2444K B218

    2SD2441

    Abstract: No abstract text available
    Text: Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm • Absolute Maximum Ratings * +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. 45° 4.0–0.20 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.


    Original     		PDF 2SD2441 2SD2441

    Untitled

    Abstract: No abstract text available
    Text: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SB1594 2SD2449 2-21F1A

    2-21F1A

    Abstract: 2SB1594 2SD2449
    Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) · Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SD2449 2SB1594 2-21F1A 2-21F1A 2SB1594 2SD2449

    2SD2449

    Abstract: 2-21F1A 2SB1594
    Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2449 2SB1594 2-21F1A 2SD2449 2-21F1A 2SB1594

    D2440

    Abstract: 2SD2440
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 D2440 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2444K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 IC = 1A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF 2SD2444K OT-23 400mA/20mA -50mA, 100MHz

    2SD2449

    Abstract: No abstract text available
    Text: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2449 2SB1594 2-21F1A 2SD2449

    2SD2449

    Abstract: 2-21F1A 2SB1594 2sb15
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO


    OCR Scan     		PDF 2SD2449 2SB1594 2SD2449 2-21F1A 2SB1594 2sb15

    2SD2440

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) • Low Saturation Voltage VCE(sat) = 1.2'V (MAX.) (IC = 5A , IB = 1A) • • High Speed : tf = 1 /us (TYP.) (Ic = 5 A, IB = ±0.5 A)


    OCR Scan     		PDF 2SD2440 2SD2440

    2-21F1A

    Abstract: 2SB1594 2SD2449
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2449 2SB1594 2-21F1A 2SD2449

    ic 4510

    Abstract: No abstract text available
    Text: TO SH IB A TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2 S B 1 594 Unit in mm .3 + 0.2 20.5M A X • High Breakdown Voltage : V £E O = —160V (Min.) • Complementary to 2SD2449 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1594 --160V 2SD2449 ic 4510

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V^EO = 160V (Min.) Complementary to 2SB1594 .3 + 0.2 20.5M A X MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2449 2SB1594

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 0 3 . 6 ± 0.2 ;15.8 ± 0 .5^


    OCR Scan     		PDF 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage • Low Saturation Voltage • High Speed • High DC C urren Gain VCBO = !00V MIN. V e BO = 18V (MIN.) v CE(sat) = l-2V (MAX.) (IC = 5A, I b = 1A) t f = l^ s (TYP.) d c = 5A, Iß = ± 0 .5 A )


    OCR Scan     		PDF 2SD2440 100ms)

    2SD2440

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 15.810.5 , Q¡3.610.2


    OCR Scan     		PDF 2SD2440 2SD2440

    2SB1594

    Abstract: 2SD2449
    Text: 2SB1594 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 594 Unit in mm 20.5MAX. High Breakdown Voltage : V^EO = —160 V (Min.) Complementary to 2SD2449 53.3 ±0.2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1594 2SD2449 2SB1594

    Untitled

    Abstract: No abstract text available
    Text: 2SB1590K 2SD2444K Transistors I Power Transistor 15V, —1A 2S B 1590K • F e a tu re s 1) Low VcE(eai). (M a x.— 0.3V at Io/Ib = ~ 0.4A/—-20m A) 2) lc = — 1A 3) C om plem ents the 2 S D 2 4 4 4 K • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C )


    OCR Scan     		PDF 2SB1590K 2SD2444K A/---20m 1590K V/50m