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    2SD169 Search Results

    2SD169 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SD1698-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD1693-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD1691-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
    2SD1694-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
    2SD1699-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    2SD169 Price and Stock

    Rochester Electronics LLC 2SD1694-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD1694-AZ Bulk 508
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    Rochester Electronics LLC 2SD1695-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD1695-AZ Bulk 111
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    Rochester Electronics LLC 2SD1691-AZ

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD1691-AZ Bulk 492
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    Micro Commercial Components 2SD1691-O-BP

    TRANS NPN 60V 5A TO126
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    Micro Commercial Components 2SD1691-G-BP

    TRANS NPN 60V 5A TO126
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    2SD169 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD169 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD169 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1690 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1690 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1690 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1691 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1691 NEC Semiconductor Selection Guide Original PDF
    2SD1691 Unisonic Technologies LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT Original PDF
    2SD1691 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1691 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1691 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1691 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2sd1691 NEC NPN power transistor, 60V, 5 ampere Scan PDF
    2SD1691 NEC NPN SILICON POWER TRANSISTOR Scan PDF
    2SD1691-G-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1691L NEC NPN Silicon Power Transistor Scan PDF
    2SD1691-O-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1691-Y-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1692 NEC TRANS DARLINGTON NPN 100V 3A 3TO-126 Original PDF
    2SD1692 NEC Semiconductor Selection Guide 1995 Original PDF

    2SD169 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 PDF

    Solenoid Driver 2a

    Abstract: 2SB1151 2SD1691
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid


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    2SB1151 2SD1691 Solenoid Driver 2a 2SB1151 2SD1691 PDF

    2SD1691

    Abstract: 2SB1151
    Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A


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    2SD1691 O-126 2SB1151 2SD1691 2SB1151 PDF

    2SB1149

    Abstract: 2SD1692
    Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)


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    2SD1692 O-126 2SB1149 2SB1149 2SD1692 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126C QW-R217-003 PDF

    2SB1149

    Abstract: 2SD1692
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor


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    2SD1692 O-126 2SB1149 2SB1149 2SD1692 PDF

    2SD1691

    Abstract: 2SB1151
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 2SB1151 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC


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    2SD1691T O-126 PDF

    2SB1151

    Abstract: 2SD1691
    Text: Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA


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    2SB1151 O-126 2SD1691 VCC10V 2SB1151 2SD1691 PDF

    2SB1151 y

    Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal


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    2SB1151 2SD1691 2SB1151L 2SB1151-T60-K 2SB1151L-T60-K 2SB1151-TN3-R 2SB1151L-TN3-R 2SB1151-TN3-T 2SB1151L-TN3-T O-126 2SB1151 y 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ PDF

    2SD1691

    Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION


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    2SD1691 O-220 2SB1151 O-126 O-126C 2SD1691L 2SD1691-x-T60-K 2SD1691L-x-T60-K 2SD1691-x-T6C-K 2SD1691L-x-T6C-K 2SD1691 transistor 2sd1691 2SB1151 2SD1691L 2SD*1691 PDF

    2SB1151

    Abstract: 2SD1691
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126C PW10ms Cycle50% QW-R217-003 2SB1151 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1695 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.30k


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    2SD1695 PDF

    2SD1691

    Abstract: 2SD*1691 2SB1151 2sb115
    Text: SavantIC Semiconductor Product Specification 2SD1691 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS


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    2SD1691 O-126 2SB1151 2SD1691 2SD*1691 2SB1151 2sb115 PDF

    2SB1151 y

    Abstract: 2SB1151-L(AZ)
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R


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    2SB1151 2SD1691 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 y 2SB1151-L(AZ) PDF

    2SB1151

    Abstract: 2SD1691
    Text: JMnic Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA


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    2SB1151 O-126 2SD1691 VCC10V 2SB1151 2SD1691 PDF

    2SD1694

    Abstract: No abstract text available
    Text: NPN SILICON POWER TRANSISTOR 2SD1694 D E S C R IP T IO N The 2SD1694 is High h FE and Low V CE sat transistor. P A C K A G E D IM E N S IO N S It is suitable for use to operate from IC without predriver, such as in millimeters (inches) 8.5 MAX. (0.334 MAX.)


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    2SD1694 2SD1694 PDF

    8AEL

    Abstract: No abstract text available
    Text: SILICO N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1699 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. Circuits. FEA TU R ES PACKAGE DIMENSIONS * H'9h 0 0 Currcm 9ain'


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    2SD1699 2SD1699 8AEL PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET r NEC S ILIC O N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N T h e 2 S D 1 6 9 9 is N P N silic o n e p ita xia l d a r lin g t o n t r a n sisto r d e sig n e d f o r p uise m o to r, p rin te r d rive r, so le n o id drive r.


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    2SD1699 2SD1699 PDF

    2SC2720

    Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
    Text: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258


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    2SD1692 2SD1276 2SC1953 2SC3620 2SC2682 2SC2258 2SC3271F 2SC2688 2SC1501 2SC2720 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110 PDF

    d 1698

    Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
    Text: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.


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    2SD1698 2SD1698 d 1698 d1698 motor printer Transistor 2SD1698 dumper PDF

    2SD1698

    Abstract: PA33
    Text: T 2— S • 5 /— h* S ilicon T ra n sisto r 2SD1698 «f • ^ Ü « b , 800 m A Î T"iOSihFE? -i ^ 9 h V ÿ 'i "7* O I mm 5,2 MAX, ( r- > j > h >^m) A M të T "t„ O Î Ê V c E ( s a t ) 'f " i _ „ (T a - 25 °C) n s w& -t fë te # ÿL -7 9 ■ ^ - x f î l J S Œ


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    2SD1698 PWS10 CycleS50 SC-43B 10Nflrr 2SD1698 PA33 PDF

    471 kck

    Abstract: transistor ajw UV 471 2SD1697
    Text: 7 s— S • 2/ — h Silicon Transistor r 2SD1697 N P N ib 7 + ‘> 7 ; H - > lJ 3 i& m fo m tiw ffim n iW i t 800 a ^ m 'C ’To O ffi;V c E (sa t 'f"i~ « * » * :£ » 'i > ? h K 7 >f 7 " -¥ • a . • - t - x F l lE ,y p . SO aE # r V CBO 100 V V CEO


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    2SD1697 PWS10 11fe1 471 kck transistor ajw UV 471 2SD1697 PDF

    IH02

    Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
    Text: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,


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    2SD1691 2SB1151 QK0276 Ffflsi0266 IH02 ts 4141 TRANSISTOR 2SB1151 2SD1691 T460 PDF