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    2SB115 Search Results

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    2SB115 Price and Stock

    Rochester Electronics LLC 2SB1151-AZ

    TRANS PNP 60V 5A TO-126
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    DigiKey 2SB1151-AZ Bulk 7,546 332
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    Rochester Electronics LLC 2SB1150-AZ

    TRANS PNP DARL 70V 3A TO-126
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    DigiKey 2SB1150-AZ Bulk 4,317 406
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    Rochester Electronics LLC 2SB1151-S1-AZ

    TRANS PNP 60V 5A TO-126
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    DigiKey 2SB1151-S1-AZ Bulk 1,915 332
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    Panasonic Electronic Components 2SB11540Q

    TRANS PNP 80V 10A TOP-3F-A1
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    DigiKey 2SB11540Q Bulk 80
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    Panasonic Electronic Components 2SB11560P

    TRANS PNP 80V 20A TOP-3F-A1
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    DigiKey 2SB11560P Bulk 80
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    Find more 2SB115 price and stock on Findchips.com

    2SB115 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB115 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB115 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB115 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB115 Unknown Cross Reference Datasheet Scan PDF
    2SB115 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB115 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB115 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB115 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB115 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB115 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1150 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1150 NEC Semiconductor Selection Guide Original PDF
    2SB1150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1150 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1150 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1150 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1150 NEC PNP SILICON DARLINGTON TRANSISTOR Scan PDF
    2SB1150 NEC PNP SILICON DARLINGTON TRANSISTOR Scan PDF
    2SB1150K NEC TRANS DARLINDTON PNP 70V 3A 3TO-126 Scan PDF
    2SB1150K NEC PNP Silicon Darlington Transistor Scan PDF

    2SB115 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1157

    Abstract: 120-80 2sb115 2SD1712
    Text: Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING


    Original     		2SB1157 2SD1712 -20mA 2SB1157 120-80 2sb115 2SD1712 PDF

    2SB1154

    Abstract: 2SD1705
    Text: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING


    Original     		2SB1154 2SD1705 10MHz 2SB1154 2SD1705 PDF

    2SB1157

    Abstract: 2SD1712
    Text: JMnic Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SB1157 2SD1712 -100V; -20mA 2SB1157 2SD1712 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 PDF

    251C

    Abstract: 2SB1156 2SD1707
    Text: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)


    OCR Scan     		2SB1156 2SD1707 -55-rent VCC--50V DGlb231 251C 2SB1156 2SD1707 PDF

    pnp 222A

    Abstract: 2SB1154 2SB1254 2SD1705
    Text: Power Transistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2S D 1705 Package Dimensions . - U n it : mm 5.2m ax. . 15.5m ax. • Features s “ ^ 3 .2 6.9m in. I- • Low collector-eim itter saturation voltage VcEtsatj


    OCR Scan     		2SB1154 2SD1705 2SB1254) pnp 222A 2SB1154 2SB1254 2SD1705 PDF

    2SB1155

    Abstract: 2SD1706
    Text: SavantIC Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications


    Original     		2SB1155 2SD1706 10MHz 2SB1155 2SD1706 PDF

    2SB1158

    Abstract: 2SD1713
    Text: SavantIC Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SB1158 2SD1713 -120V; -20mA 2SB1158 2SD1713 PDF

    2SB1159

    Abstract: 2SD1714
    Text: SavantIC Semiconductor Product Specification 2SB1159 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SB1159 2SD1714 -140V; -20mA 2SB1159 2SD1714 PDF

    2SB1155

    Abstract: 2SD1706
    Text: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		2SB1155 2SD1706 2SB1155 2SD1706 PDF

    2SD1712

    Abstract: 2SB1157
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1157 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1712 APPLICATIONS


    Original     		2SB1157 -100V 2SD1712 -100V; -20mA; 2SD1712 2SB1157 PDF

    2SB1156

    Abstract: 2SD1707
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707


    Original     		2SB1156 2SD1707 -100V; 2SB1156 2SD1707 PDF

    Solenoid Driver 2a

    Abstract: 2SB1151 2SD1691
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid


    Original     		2SB1151 2SD1691 Solenoid Driver 2a 2SB1151 2SD1691 PDF

    2SB1158

    Abstract: 2SD1713
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1158 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1713 APPLICATIONS


    Original     		2SB1158 -120V 2SD1713 -120V; -20mA; 2SB1158 2SD1713 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1706 2SD1706 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1155 • Features Package Dimensions • Low collector-emitter saturation voltage Vce<mo • Good linearity of DC current gain (Iife) • High collector current (Ic)


    OCR Scan     		2SD1706 2SB1155 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2


    OCR Scan     		2SB1154 2SD1705 PDF

    2SD1707

    Abstract: No abstract text available
    Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE


    Original     		2SD1707 2SB1156 2SD1707 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original     		2SD1691 2SB1151 O-126C QW-R217-003 PDF

    2sb115

    Abstract: 2SB1158 2SD1713 2SD171
    Text: Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1713 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING


    Original     		2SB1158 2SD1713 -20mA 2sb115 2SB1158 2SD1713 2SD171 PDF

    2SB1151

    Abstract: 2SD1691
    Text: PNP SILICON POWER TRANSISTOR 2SB1151 DESCRIPTION The 2SB1151 is a Low VcE sat transistor which has a large current PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES


    OCR Scan     		2SB1151 2SB1151 2SD1691. 2SD1691 PDF

    2SD1705

    Abstract: 2SB1154 2sd170
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SD1705 2SB1154 2SD1705 2SB1154 2sd170 PDF

    2SB1154

    Abstract: 2SD1705
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features


    Original     		2002/95/EC) 2SB1154 2SD1705 SC-92 2SB1154 2SD1705 PDF

    2SB1155

    Abstract: 2SD1706
    Text: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		2SB1155 2SD1706 2SB1155 2SD1706 PDF

    2SD1705

    Abstract: 2SB1154
    Text: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit


    Original     		2SD1705 2SB1154 2SD1705 2SB1154 PDF