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    2SD1410 Search Results

    2SD1410 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1410 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1410 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1410 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1410 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1410 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1410 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1410 Toshiba 6A, 25W, V(ceo): 250V, NPN darlington transistor Scan PDF
    2SD1410A Toshiba TRANS DARLINGTON NPN 250V 6A 3(2-10R1A) Original PDF
    2SD1410A Unknown NPN Transistor Scan PDF
    2SD1410A Toshiba Silicon NPN triple diffused type transistor for igniter, high voltage switching applications Scan PDF
    2SD1410AF Toshiba 2SD1410A - Trans Darlington NPN 250V 6A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SD1410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A 2-10R1A
    Text: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A 20070701-JA D1410A 2SD1410A 2-10R1A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: No abstract text available
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A D1410A

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    2SD1410

    Abstract: 2S0141
    Text: SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2ÍQ.2 FEATURES: . High DC Current Gain : hp£= 2000(Min.) (Vce= 2V, Ic= 2A) MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1410 20/is 2S01410 2SD1410 2S0141

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 OA IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • . 03.2 ± 0.2 2.7± 0.2 High DC Current Gain : hp’g = 2000 Min.


    OCR Scan     		PDF 2SD1410A

    004AI

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1410A TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE n mmr u u mm m m m A ir m INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (V ç E = 2V, Iç = 2 A )


    OCR Scan     		PDF 2SD1410A 004AI

    2SD141

    Abstract: 2SD1410A
    Text: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'


    OCR Scan     		PDF 2SD1410A 2SD141 2SD1410A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb dF “•"'iö'C DISCRETE/OPTO J ^D^SSO □ 0 0 7 T 4 c] □ Ü7 9 4 9 ' “ D ^ T - 3 3 - 2 9 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in nun


    OCR Scan     		PDF 2SD1410

    2SD1410

    Abstract: No abstract text available
    Text: 9097250 TOSHIBA d F | - ìc h ts s o ~si TOSHIBA {DISCRETE/OPTO} àb'C 07 9*9 <DISCRET E / O P T O > □oottmt /" T-33-29 SILICON NPNTRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 IGNITER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nun ‘ HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2SD1410 T-33-29 2SD1410

    igniter z 2000

    Abstract: 2SD1410
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS Unit in rr IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2±Q2 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=2A) MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1410 20fle igniter z 2000 2SD1410

    2SD141

    Abstract: 2SD1410A
    Text: TO SHIBA 2SD1410A 2 S D 1 4 1 OA TO SHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS • High DC Current Gain : hp^ —2000 Min. (V£ e = 2V, Iq = 2A) INDUSTRIAL APPLICATIONS Unit in mm r <v> O)


    OCR Scan     		PDF 2SD1410A 2SD141 2SD1410A

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SC3560

    Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
    Text: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.


    OCR Scan     		PDF O-220 2SC3309 20MIN. 2SC3560 10MIN. 2SC3561 2SD1571 2SC3559 2SC3560 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SD1383K

    Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
    Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT


    OCR Scan     		PDF 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380 2SD1381 2SD1382 2SD1383T0-3PB) 2SD1403 2-10L1A) 2SD1383K 2SD1402 2SD1407 2SD1416 2SD1390

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266