2SD1256 TRANSISTOR Search Results

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SD1256

Abstract: 2SB0933 2SB933
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SD1256

Abstract: 2SB0933
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SD1256

Abstract: 2SB0933
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SB933

Abstract: 2SD1256
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C

Contextual Info: Transistors SMD Type Product specification 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.

2SD1256

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC.

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Ta=25°C

Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2.0±0.5 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 8.5 (6.0) 1.3 3 2 • Absolute Maximum Ratings TC = 25°C

Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

Contextual Info: P ow er Tra n sisto rs 2SD125Ó 2SD1256 Silicon NPN Epitaxial Planar Type P a ck age Dim ensions P o w e r Switching Co m p le m e n ta ry Pair with 2SB933 U n it ! i 8 .7 m a x • Fe atures 6.5 max • Low c o lle c to r-e m itte r satu ratio n v o lta g e V ll (Sat

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2SB933

Abstract: 2SD1256
Contextual Info: Power Transistors 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current IC

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

2SB0933

Abstract: 2SB933 2SD1256 2sd1256 transistor
Contextual Info: Power Transistors 2SB0933 2SB933 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –10 A Collector current

TO111

Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle