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Toshiba America Electronic Components 2SD1223(TE16L1,NQ) Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min
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Mouser Electronics	2SD1223(TE16L1,NQ)		2,779			1 $1.09 10 $0.741 100 $0.562 1000 $0.388 10000 $0.347	Buy Now

2SD1223 Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908. D1223	PDF
D1223 Abstract: 2SB908 2SD1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908. D1223 2SB908 2SD1223	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908.	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908.	PDF
d1223 Abstract: 2SD1223 2SB908 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908. d1223 2SD1223 2SB908	PDF
d1223 Abstract: 2SB908 2SD1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908. d1223 2SB908 2SD1223	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908.	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD1223 2SB908.	PDF
D1223 Abstract: A4503 2SD1223 2SB908 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD1223 2SB908. D1223 A4503 2SD1223 2SB908	PDF
3A 100V npn LOW SATURATION VOLTAGE Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage	OCR Scan	2SD1223 2SB908. 3A 100V npn LOW SATURATION VOLTAGE	PDF
2SD1223 Abstract: 2SD1223 Q 2SB908 Contextual Info: TO SH IBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)	OCR Scan	2SD1223 2SB908. 2SD1223 2SD1223 Q 2SB908	PDF
2SD1223 Abstract: 2SB908 Contextual Info: 2SD1223 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.) Low Saturation Voltage : V q ^ (sat) = 1.5 V (Max.)	OCR Scan	2SD1223 2SB908. 2SD1223 2SB908	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) mm mmr v SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-	OCR Scan	2SD1223 2SB908.	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS High DC Current Gain : hfE (1) = 2000 (Min.) Low Saturation Voltage : V çe (sat) = 1-5 V (Max.)	OCR Scan	2SD1223 2SB908.	PDF

te 1819 Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331 Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =	OCR Scan	2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929	PDF
Power MOLD Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072 Contextual Info: contents www search print index quit Small Signal Devices ➔ ➔ • Surface Mount Products D-PACK POWER MOLD 23.1 23.2 23.3 Small Signal Devices TO S H I B A contents www search print index quit Small Signal Devices ➔ ➔ ■ Surface Mount Products D-PACK (POWER MOLD)	Original	2SC3075 2SC3405 2SD1220 2SC2983 2SD1160 2SC3233 2SD1221 2SC3805 2SC4203 2SC3076 Power MOLD 2SC3303 TE16L 2SC380 STA1100 2sc3072	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=-2V, IC=-1A) . Low Saturation Voltage : ^CE(sat)“-1•^(Max.) (IC=-3A)	OCR Scan	2SB908 2SD1223. 13ASE	PDF
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB908 U nit in mm SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. POW ER AMPLIFIER APPLICATIONS. • • • I High DC Current Gain : h F E ( l ) = 2000(M in.)(V cE =—2V, Ic = - 1 A )	OCR Scan	-2SB908 2SD1223. 15OLLECTOR-EMITTER 2SB908	PDF
2SB908 Abstract: 2SD1223 Contextual Info: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)	OCR Scan	2SB908 2SD1223. 2SB908 2SD1223	PDF
Contextual Info: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 Unit in mm SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE (i) = 2000 (Min.) (VCE = - 2 V, IC = - 1 A)	OCR Scan	2SB908 2SD1223.	PDF
2SB908 Abstract: 2SD1223 Contextual Info: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)	OCR Scan	2SB908 2SD1223. 2SB908 2SD1223	PDF
2SB908 Contextual Info: T O SH IB A 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm • High DC Current Gain : hF E (l) = 2000 (Min.) (VCE = -2 V , IC = - 1 A )	OCR Scan	2SB908 2SD1223. 50X50 2SB908	PDF
2SB908 Abstract: 2SD1223 Contextual Info: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)	OCR Scan	2SB908 2SD1223. 2SB908 2SD1223	PDF
Contextual Info: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB908 2SD1223	PDF

2SD1223 Q Search Results

2SD1223 Q Price and Stock

Toshiba America Electronic Components 2SD1223(TE16L1,NQ)

2SD1223 Q Datasheets Context Search

D1223

D1223

d1223

d1223

D1223

3A 100V npn LOW SATURATION VOLTAGE

2SD1223

2SD1223

te 1819

Power MOLD

2SB908

2SB908

2SB908

2SB908