2SD1160O Search Results

2SD1160O Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SD1160-O		Unknown	Farbcode: orange		Scan	PDF
2SD1160-O		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2SD1160-O		Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)		Scan	PDF

2SD1160O Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D1160 Abstract: 2SD1160 2SD1160-O 2SD1160-Y Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode	Original	2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y	PDF
Untitled Abstract: No abstract text available Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode	Original	2SD1160	PDF
D1160 Abstract: 2SD1160 2SD1160-O 2SD1160-Y Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain · Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) · Built-in free wheel diode	Original	2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y	PDF
1M300 Abstract: D1160 Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode	Original	2SD1160 1M300 D1160	PDF
D1160 Abstract: 2SD1160 2SD1160-O 2SD1160-Y Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode	Original	2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y	PDF
D1160 Abstract: 2SD1160 2SD1160-O 2SD1160-Y Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode	Original	2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y	PDF
2SD1160O Abstract: No abstract text available Text: 1CO SILIC0N NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm SWITCHING APPLICATIONS. SUITABLE FOR MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain . Low Saturation Voltage : 0.6V MAX. . Built-in Free Wheel Diode @IC= 2A, lB=40mA MAXIMUM RATINGS (Ta=25 C)	OCR Scan	30VX10A 09U0SZ 2SD1160' 2SD1160O	PDF