2SC5404
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV
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2SC5404
64kHz
2SC5404
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Toshiba c5404
Abstract: c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 2-16E3A
Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)
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2SC5404
Toshiba c5404
c5404
c5404 transistor toshiba
toshiba marking code transistor C5404
c5404 transistor
TRANSISTOR 2SC5404
2SC5404
2-16E3A
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm HIGH SPEED SWITCHING APPLICATIONS . 15.5 ±0.5 03.6±O .3 3.0 i 0.3 te High Speed tf=0.15/¿s Typ.
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2SC5404
1500v
95MAX
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current
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2SC5406,
2SC5406A
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NEC/LT 7221
Abstract: nec 772 2SC5409 2SC5409-T1 NEC 2706
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 16 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin
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2SC5409
2SC5409-T1
NEC/LT 7221
nec 772
2SC5409
2SC5409-T1
NEC 2706
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Untitled
Abstract: No abstract text available
Text: 2SC540 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A).10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC540
Freq100M
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2SC5407
Abstract: npn vces 1700v 8a
Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO
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2SC5407
64kHz,
2SC5407
npn vces 1700v 8a
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2SC5408
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 17 GHzTYP. 2.1 ±0.1 „ 1.25+0.1 „ |Szie|2 = 15.5 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 7 mA
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2SC5408
2SC5408-T1
50-pcs
2SC5408
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm 15.5±0.5 Symbol Collector to base voltage VCBO VCES Collector to emitter voltage VCEO Emitter to base voltage
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Original
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2SC5406,
2SC5406A
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PDF
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2SC5407
Abstract: No abstract text available
Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V 1700 V 600 V 5 V 20 A 15 A 8 A VCES Collector to emitter voltage
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2SC5407
2SC5407
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nec 473
Abstract: p1209 NEC 596 nec 646 nec 1299 662 nec 731
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E 8-mm wide emboss taping, 6-pin (collector) feed hole direction
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Original
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2SC5408
2SC5408-T1
50-pcs
nec 473
p1209
NEC 596
nec 646
nec 1299 662
nec 731
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PDF
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2SC5405
Abstract: No abstract text available
Text: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SC5405
breakd05
2SC5405
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2SC5404
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV
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2SC5404
64kHz
2SC5404
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PDF
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2SC5404
Abstract: 2-16E3A TRANSISTOR 2SC5404
Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.)
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2SC5404
2SC5404
2-16E3A
TRANSISTOR 2SC5404
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Toshiba c5404
Abstract: c5404 transistor toshiba toshiba marking code transistor C5404 c5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404
Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.)
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2SC5404
2-16E3AHIBA
Toshiba c5404
c5404 transistor toshiba
toshiba marking code transistor C5404
c5404
c5404 transistor
TRANSISTOR 2SC5404
2SC5404
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PDF
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NEC 2706
Abstract: nec 501 t 6229 6pin
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 16 G H zT Y P . 2.1 ± 0.1 1.25+0.1 |Szie|2 = 14 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 20 mA
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2SC5409
2SC5409-T1
50-pcs
NEC 2706
nec 501 t
6229 6pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP
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2SC5407
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2-16E3A
Abstract: 2SC5404
Text: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • • • High Speed High Voltage Low Saturation Voltage
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2SC5404
100ms
2-16E3A
2SC5404
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2SC5408
Abstract: 2SC5408-T1 p1209
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin
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Original
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2SC5408
2SC5408-T1
2SC5408
2SC5408-T1
p1209
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PDF
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2SC5406
Abstract: 2SC5406A
Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage
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Original
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2SC5406,
2SC5406A
2SC5406
2SC5406
2SC5406A
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PDF
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TRANSISTOR 2SC5404
Abstract: 2SC5404 2-16E3A
Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)
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Original
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2SC5404
TRANSISTOR 2SC5404
2SC5404
2-16E3A
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage
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2SC5405
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TRANSISTOR 2SC5404
Abstract: No abstract text available
Text: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r s a n a i HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Speed tf=0.15^s Typ. v^T5r. = iñnnv TTiVh Vnlt.n crp • •
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2SC5404
TRANSISTOR 2SC5404
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PDF
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2SC5406
Abstract: 2SC5406A
Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V 1500 V 600 V 5 V 20 A 14 A 8 A VCES
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2SC5406,
2SC5406A
2SC5406
2SC5406A
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PDF
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