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    TDK Electronics 2SC5406

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    Renesas Electronics Corporation 2SC5408-T1

    NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .03 W; Maximum Collector Current (IC): .01 A; No. of Elements: 1;
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    Vyrian 2SC5408-T1 210
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    2SC540 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC540 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC540 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC540 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC540 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC540 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC540 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC540 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC540 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC540 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC540 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC540 Unknown Cross Reference Datasheet Scan PDF
    2SC5400 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5402 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5403 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5404 Toshiba Silicon NPN Transistor Original PDF
    2SC5404 Toshiba NPN Transistor Original PDF
    2SC5404 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5404 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5404 Toshiba Silicon NPN triple diffused MESA type transistor for horizontal deflection output for high resolution, display, color TV, high speed switching applications Scan PDF
    2SC5405 Panasonic Silicon NPN triple diffusion planar type Original PDF

    2SC540 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5404

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV


    Original     		2SC5404 64kHz 2SC5404 PDF

    Toshiba c5404

    Abstract: c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 2-16E3A
    Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original     		2SC5404 Toshiba c5404 c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 2-16E3A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		2SC5406, 2SC5406A PDF

    NEC/LT 7221

    Abstract: nec 772 2SC5409 2SC5409-T1 NEC 2706
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 16 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin


    Original     		2SC5409 2SC5409-T1 NEC/LT 7221 nec 772 2SC5409 2SC5409-T1 NEC 2706 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC540 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A).10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC540 Freq100M PDF

    2SC5407

    Abstract: npn vces 1700v 8a
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO


    Original     		2SC5407 64kHz, 2SC5407 npn vces 1700v 8a PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm 15.5±0.5 Symbol Collector to base voltage VCBO VCES Collector to emitter voltage VCEO Emitter to base voltage


    Original     		2SC5406, 2SC5406A PDF

    2SC5407

    Abstract: No abstract text available
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V 1700 V 600 V 5 V 20 A 15 A 8 A VCES Collector to emitter voltage


    Original     		2SC5407 2SC5407 PDF

    nec 473

    Abstract: p1209 NEC 596 nec 646 nec 1299 662 nec 731
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E 8-mm wide emboss taping, 6-pin (collector) feed hole direction


    Original     		2SC5408 2SC5408-T1 50-pcs nec 473 p1209 NEC 596 nec 646 nec 1299 662 nec 731 PDF

    2SC5405

    Abstract: No abstract text available
    Text: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		2SC5405 breakd05 2SC5405 PDF

    2SC5404

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV


    Original     		2SC5404 64kHz 2SC5404 PDF

    2SC5404

    Abstract: 2-16E3A TRANSISTOR 2SC5404
    Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original     		2SC5404 2SC5404 2-16E3A TRANSISTOR 2SC5404 PDF

    2SC5404

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV ・High speed switching applications


    Original     		2SC5404 64kHz 2SC5404 PDF

    Toshiba c5404

    Abstract: c5404 transistor toshiba toshiba marking code transistor C5404 c5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404
    Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original     		2SC5404 2-16E3AHIBA Toshiba c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 PDF

    2SC5408

    Abstract: 2SC5408-T1 p1209
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin


    Original     		2SC5408 2SC5408-T1 2SC5408 2SC5408-T1 p1209 PDF

    2SC5406

    Abstract: 2SC5406A
    Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original     		2SC5406, 2SC5406A 2SC5406 2SC5406 2SC5406A PDF

    TRANSISTOR 2SC5404

    Abstract: 2SC5404 2-16E3A
    Text: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original     		2SC5404 TRANSISTOR 2SC5404 2SC5404 2-16E3A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		2SC5405 PDF

    2SC5406

    Abstract: 2SC5406A
    Text: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V 1500 V 600 V 5 V 20 A 14 A 8 A VCES


    Original     		2SC5406, 2SC5406A 2SC5406 2SC5406A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm HIGH SPEED SWITCHING APPLICATIONS . 15.5 ±0.5 03.6±O .3 3.0 i 0.3 te High Speed tf=0.15/¿s Typ.


    OCR Scan     		2SC5404 1500v 95MAX PDF

    2SC5408

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 17 GHzTYP. 2.1 ±0.1 „ 1.25+0.1 „ |Szie|2 = 15.5 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 7 mA


    OCR Scan     		2SC5408 2SC5408-T1 50-pcs 2SC5408 PDF

    NEC 2706

    Abstract: nec 501 t 6229 6pin
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 16 G H zT Y P . 2.1 ± 0.1 1.25+0.1 |Szie|2 = 14 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 20 mA


    OCR Scan     		2SC5409 2SC5409-T1 50-pcs NEC 2706 nec 501 t 6229 6pin PDF

    2-16E3A

    Abstract: 2SC5404
    Text: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • • • High Speed High Voltage Low Saturation Voltage


    OCR Scan     		2SC5404 100ms 2-16E3A 2SC5404 PDF

    TRANSISTOR 2SC5404

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r s a n a i HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Speed tf=0.15^s Typ. v^T5r. = iñnnv TTiVh Vnlt.n crp • •


    OCR Scan     		2SC5404 TRANSISTOR 2SC5404 PDF