Untitled
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5110
SC-70
--j50
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S21C HF
Abstract: s21c Z804
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5110 U n it in mm FOR V C O A PPLIC A T IO N M A X IM U M R A T IN G S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Em itter V oltage E m itter-B ase V oltage Collector C urrent Base C urrent
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2SC5110
SC-70
S21C HF
s21c
Z804
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5110
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5110 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 1.25 ± 0 .1 | MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage
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2SC5110
SC-70
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation
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2SC5110
2SC5110
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IC 1298
Abstract: marking 603 npn transistor
Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO
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2SC5110
SC-70
IC 1298
marking 603 npn transistor
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5110 TOSHIBA TRANSISTOR 2 S SILICON NPN EPITAXIAL PLANAR TYPE C 5 1 1 Unit in mm FOR VCO APPLICATION 2.1 ± 0.1 M A X IM U M R A T IN G S Ta = ? S °C l CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5110
SC-70
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5110
2SC5110
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2SC5110
Abstract: IC IL 1117
Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5110
SC-70
2SC5110
IC IL 1117
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation
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2SC5110
2SC5110
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5110
2SC5110
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5110 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧
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2SC5110
SC-70
-j150
-j100
-j250
2SC5110
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2SC5110
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO
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2SC5110
SC-70
2SC5110
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2N2886
Abstract: FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
2N2886
FZJ 131
2SC15-1
2SC111
usaf516es047m
2SC109
BF119
BF140
j-120
2SC153
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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BCE0003E
2sc5108
toshiba transistors catalog
2sk3476
UHF/VHF IC transceiver
2SK403
microwave Duplexer
Am tuning varicap
Wideband MMIC VCO covers 8 GHz to 12.5 GHz
2Sk3656
microwave transceiver 3.54 GHz
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2SC111
Abstract: 2SC1381 b1260 BC226 BSW66At AT368 2n2886 st6574 2SC153 2SC308t
Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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2N5211
200MSA
2SC304
200MI
2SC305
200MS
10Om0
NS1356
NS2101I
2SC111
2SC1381
b1260
BC226
BSW66At
AT368
2n2886
st6574
2SC153
2SC308t
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
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2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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