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    2SC4541 Price and Stock

    Toshiba America Electronic Components 2SC4541(TE12L,ZC)

    Trans GP BJT NPN 50V 3A 1000mW 4-Pin(3+Tab) PW-Mini
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    Verical 2SC4541(TE12L,ZC) 2,962 516
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    2SC4541(TE12L,ZC) 846 180
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    Quest Components 2SC4541(TE12L,ZC) 2,369
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    Chip1Stop 2SC4541(TE12L,ZC) Cut Tape 846
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    Toshiba America Electronic Components 2SC4541(TE12L,F)

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    Quest Components 2SC4541(TE12L,F) 808
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    2SC4541 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4541 Kexin Power Switching Applications Original PDF
    2SC4541 Toshiba NPN Transistor Original PDF
    2SC4541 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4541 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4541 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4541 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4541 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC4541 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF

    2SC4541 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736 2SA1736 2SC4541

    0100MS

    Abstract: 2SC4541 2SA1736
    Text: 2SC4541 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4541 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1.5 A)


    Original     		PDF 2SC4541 2SA1736 SC-62 20070701-JA 0100MS 2SC4541 2SA1736

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1736 2SC4541 -75mA -100mA

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 s (typ.)


    Original     		PDF 2SC4541 2SA1736 2SA1736 2SC4541

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4541 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1.5 A)


    Original     		PDF 2SC4541 2SA1736 SC-62 2SA1736 2SC4541

    smd marking LD

    Abstract: ld smd transistor 2SA1736 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A 2SC4541 smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541


    Original     		PDF 2SA1736 2SC4541 -75mA -100mA smd marking LD ld smd transistor 2SA1736 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A 2SC4541 smd marking TF

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 s (typ.)


    Original     		PDF 2SC4541 2SA1736 2SA1736 2SC4541

    2SC4541

    Abstract: 2SA1736
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) · High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736 2SC4541 2SA1736

    smd marking KD

    Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736


    Original     		PDF 2SC4541 2SA1736 100mA smd marking KD kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736 2SA1736 2SC4541

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)


    Original     		PDF 2SA1736 2SC4541 2SA1736 2SC4541

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package


    Original     		PDF 2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0

    Untitled

    Abstract: No abstract text available
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		PDF 2SA1736 2SC4541 SC-62

    2SA1736

    Abstract: 2SC4541
    Text: TOSHIBA 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)


    OCR Scan     		PDF 2SC4541 2SA1736 250mm2 2SA1736 2SC4541

    D1647

    Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
    Text: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368


    OCR Scan     		PDF 2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 D1647 sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4541 U n it in mm o POWER AMPLIFIER APPLICATIONS ° POWER SWITCHING APPLICATIONS • Low S a t u r a t i o n V o lta g e : V c E s a t = -0 .5 V (M a x .) (Ic= 1 .5 A ) • High Speed S w itc h in g Time: t S(;g=0.5(JS (T y p .)


    OCR Scan     		PDF 2SC4541 2SA1736

    C1959

    Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
    Text: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202


    OCR Scan     		PDF 2SD2403 2SD2404 2SD2405 2SD2406 2SD2407 2SD2408 2SD2409 2SD2410 2SD2412 2SD2413 C1959 nec 2405 NEC 2403 2sc4560 nec 2410 2sd2427 nec 2412 2SD1509 NEC 2415

    2SC4541

    Abstract: 2SA1736 transistor marking 7D
    Text: T O S H IB A 2SC4541 2SC4541 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)


    OCR Scan     		PDF 2SC4541 2SA1736 40X50X0 250mm2 2SC4541 2SA1736 transistor marking 7D

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS Low Saturation Voltage : q e (s a t ) = 0-5V (Max.) (IC = 1-5A) High Speed Switching Time : tg tg = 0.5//S (Typ.)


    OCR Scan     		PDF 2SC4541 2SA1736 40X50X0 250mm2X0

    2SA1736

    Abstract: 2SC4541
    Text: TOSHIBA 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)


    OCR Scan     		PDF 2SC4541 2SA1736 250mm2 2SA1736 2SC4541

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC4542

    Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
    Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313


    OCR Scan     		PDF 2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555

    2SA1736

    Abstract: 2SC4541 marking HE M2X marking
    Text: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)


    OCR Scan     		PDF 2SA1736 2SC4541 2SA1736 2SC4541 marking HE M2X marking