Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC2880 Search Results

    2SC2880 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2880 Kexin High Voltage Switching Applications Original PDF
    2SC2880 Toshiba NPN Transistor Original PDF
    2SC2880 Unknown Scan PDF
    2SC2880 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2880 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2880 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2880 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2880 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2880 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2880 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2880 Toshiba Silicon NPN transistor for high voltage switching applications Scan PDF
    2SC2880 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) Scan PDF
    2SC2880 Toshiba SOT-89 Transistors Scan PDF
    2SC2880O Toshiba Silicon NPN Triple Diffused Type (PCT process) Transistor Original PDF
    2SC2880Y Toshiba Silicon NPN Triple Diffused Type (PCT process) Transistor Original PDF

    2SC2880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1200

    Abstract: 2SC2880
    Text: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2880 2SA1200 2SA1200 2SC2880

    2SA1200

    Abstract: 2SC2880
    Text: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SC2880 2SA1200 2SA1200 2SC2880

    2SA1200

    Abstract: smd marking Y 2SC2880 SMD B100
    Text: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SA1200 -150V 120MHz 2SC2880 -10mA -30mA 2SA1200 smd marking Y 2SC2880 SMD B100

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO


    Original     		PDF 2SA1200 -150V 120MHz 2SC2880 -30mA -10mA

    2SC2880

    Abstract: 2SA1200
    Text: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SC2880 120MHz 2SA1200 2SC2880 2SA1200

    Untitled

    Abstract: No abstract text available
    Text: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • Unit: mm High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2880 2SA1200 SC-62

    Untitled

    Abstract: No abstract text available
    Text: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2880 2SA1200 SC-62

    2SA1200

    Abstract: 2SC2880
    Text: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SC2880 2SA1200 2SA1200 2SC2880

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SC9830

    Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)


    Original     		PDF 205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2880 120MHz 2SA1200

    NEC k 3654

    Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
    Text: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6


    OCR Scan     		PDF 2SC3643 2SC3536 2SC3644 2SC3535 2SC3737 2SC3738 NEC k 3654 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES

    Untitled

    Abstract: No abstract text available
    Text: 2SC2880 SILICON NPN TRIPLE DFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 1.6 MAX 4.6M A X. FEATURES: . High Voltage 1.7 MAX. : V c e o =150V m . High Transition Frequency : fT=120MHz - . P c = l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package


    OCR Scan     		PDF 2SC2880 120MHz 2SA1200 a45-ao5 250mroz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC288Q HIGH VOLTAGE SWITCHING APPLICATIONS. High Voltage : V q E 0 = !50V High Transition Frequency : fp=120MHz P q = Ö.8~2W (Mounted on Ceramic Substrate) Small Flat Package


    OCR Scan     		PDF 2SC2880 2SC288Q 120MHz 2SA1200 250mm2X0

    2SC2880

    Abstract: 2SA1200 marking AO
    Text: TOSHIBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6 M AX — High Voltage : VCEO —150V High Transition Frequency : frp = 120MHz P q = 0.8~2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2880 120MHz 2SA1200 250mm2 2SC2880 2SA1200 marking AO

    2SA1200

    Abstract: 2SC2880
    Text: TO SH IBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 1.6 M A X. 4.6 M A X. High Voltage : V0e q = 15OV High Transition Frequency : frp= 120MHz Pq = 0.8~2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2880 120MHz 2SA1200 250mm2 2SA1200 2SC2880

    Untitled

    Abstract: No abstract text available
    Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l


    OCR Scan     		PDF OT-89 250mmJ 2SC2883 2SC2884 2SC2873 2SC2982 2SA1203 2SA1204 2SA1213 2SA1314

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    S500M

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SA1200 120MHz 2SC2880 S500M

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


    OCR Scan     		PDF 2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

    2SC3301

    Abstract: 2sa120 2SC2880
    Text: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E


    OCR Scan     		PDF 2SC2880 2SC3301 2sa120 2SC2880

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA1200 DATA SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS (2SA1200) Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • • • High Voltage :V c e O = - 150V High Transition Frequency : fp= 120MHz (Typ.)


    OCR Scan     		PDF SA1200 2SA1200) 120MHz 2SC2880