2SC2582
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Large collector power dissipation ・High transition frequency APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION
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2SC2582
O-126
500mA
2SC2582
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2SC2586
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
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2SC2586
2SC2586
P11693EJ1V0DS00
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2SA1106
Abstract: 2sc2581 amplifer 2sa110
Text: Inchange Semiconductor Product Specification 2SA1106 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High frequency ·Complement to type 2SC2581 APPLICATIONS ·Audio power amplifer applications ·DC-DC converters PINNING PIN DESCRIPTION 1
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2SA1106
2SC2581
-25mA
-140V;
2SA1106
2sc2581
amplifer
2sa110
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transistor 2sc2581
Abstract: 2sc2581 transistor 2sA1106 2SA1106 SC-65
Text: 2SC2581 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1106 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SC2581
SC-65
2SA1106
transistor 2sc2581
2sc2581
transistor 2sA1106
2SA1106
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SC2581 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200è V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC2581
Freq20M
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2SC2582
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Large collector power dissipation ·High transition frequency APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter
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2SC2582
O-126
500mA
2SC2582
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2SC2588
Abstract: audio power amplifiers with transistors
Text: SavantIC Semiconductor Product Specification 2SC2588 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators
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2SC2588
MT-200
MT-200)
2SC2588
audio power amplifiers with transistors
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.
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2SC2586
2SC2586
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2sc2581
Abstract: 2SA1106
Text: Inchange Semiconductor Product Specification 2SC2581 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1106 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter
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2SC2581
2SA1106
2sc2581
2SA1106
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2SC2582
Abstract: No abstract text available
Text: Power Transistors 2SC2582 2SC2582 Silicon NPN Epitaxial Planar Type Package Dimensions AF Power Amplifier • Feature • L arge collector pow er dissipation Pc Absolute Maximum Ratings (Ta=25°C) Item Symbol Collector-base voltage ' Value Unit VcBO 45 V
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2SC2582
O-126
2SC2582
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PDF
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2sc2581
Abstract: 2SA1106
Text: JMnic Product Specification 2SC2581 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1106 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter PINNING PIN DESCRIPTION
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2SC2581
2SA1106
2sc2581
2SA1106
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2SC2625
Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)
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01l3Tc
2SC2556
2SC2556A
2SC2558-KA
800MHz
2SC2558-MA
2SC2559-KA
2SC2559-MA
2SC2625
2SC2559
2SC2624
2SC2626
2sc2562
2SC2585
2sc2592
251C
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2SC2582
Abstract: No abstract text available
Text: JMnic Product Specification 2SC2582 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Large collector power dissipation ・High transition frequency APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC2582
O-126
500mA
2SC2582
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2SA1105
Abstract: 2SC2580 SC-65
Text: 2SC2580 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SC2580
SC-65
2SA1105
2SA1105
2SC2580
SC-65
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2sc2581
Abstract: 2SA1106
Text: SavantIC Semiconductor Product Specification 2SC2581 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1106 ·High power dissipation ·High current capability APPLICATIONS ·Audio power amplifier ·DC-DC converter PINNING
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2SC2581
2SA1106
2sc2581
2SA1106
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2SC2580
Abstract: 2SA1105 "2SC2580"
Text: SavantIC Semiconductor Product Specification 2SC2580 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1105 ·High power dissipation ·High current capability APPLICATIONS ·Audio power amplifier ·DC-DC converter PINNING
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2SC2580
2SA1105
2SC2580
2SA1105
"2SC2580"
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2sc2580
Abstract: 2sa1105
Text: Inchange Semiconductor Product Specification 2SC2580 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1105 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter
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2SC2580
2SA1105
2sc2580
2sa1105
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2SC2588
Abstract: 2sc258 audio power amplifiers with transistors
Text: Inchange Semiconductor Product Specification 2SC2588 Silicon NPN Power Transistors • DESCRIPTION ·With MT-200 package ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators
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2SC2588
MT-200
MT-200)
2SC2588
2sc258
audio power amplifiers with transistors
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PDF
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2SC2582
Abstract: No abstract text available
Text: Power T ransistors 2SC2582 2SC2582 Silicon NPN Epitaxial Planar Type Package Dimensions AF Power Amplifier • Feature • Large collector power dissipation P c ■ Absolute Maximum Ratings (Ta=25°C) Item Collector-base voltage Symbol Value Unit VcBO 45
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2SC2582
10ftiA
2SC2582
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2SA1106 PNP Transistor
Abstract: 2sc2581 transistor 2sA1106 2SA1106 2sA1106 transistor transistor 2sc2581
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SC2581 APPLICATIONS ·Designed for audio and general purpose applications.
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2SA1106
-140V
2SC2581
-50mA;
-140V;
2SA1106 PNP Transistor
2sc2581
transistor 2sA1106
2SA1106
2sA1106 transistor
transistor 2sc2581
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2SC2580
Abstract: 2SA1105
Text: JMnic Product Specification 2SC2580 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1105 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter PINNING PIN DESCRIPTION
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2SC2580
2SA1105
2SC2580
2SA1105
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.
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2SC2586
11693EJ1V0D
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2SC2585
Abstract: S21E
Text: 2SC2585 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. MAXIMUM RATINGS IC 65 mA VCEO 12 V VCBO 25 V VEB 1.5 V PT 400 mW @ TC = 166 C
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2SC2585
2SC2585
S21E
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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