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    Panasonic Electronic Components 2SC22950BL

    RF TRANS NPN 20V 250MHZ MINI3-G1
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    2SC229 Datasheets (120)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC229 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC229 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC229 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC229 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC229 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC229 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC229 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC229 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC229 Unknown Cross Reference Datasheet Scan PDF
    2SC2290 Toshiba Silicon NPN transistor for 2-30MHz SSB linear power amplifier applications (low supply voltage use) Original PDF
    2SC2290 Various Russian Datasheets Transistor Original PDF
    2SC2290 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2290 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2290 Unknown Scan PDF
    2SC2290 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2290 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2290 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2290 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2290 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2290 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2SC229 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SC2298 Silicon NPN Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO


    Original     		PDF 2SC2298 O-126 D-85622 Hitachi DSA00164

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 1.9±0.1 Ta=25˚C Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current


    Original     		PDF 2SA1022 2SC2295 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022

    2SC2290

    Abstract: 2SC2290A
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 2SC2290A

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.


    Original     		PDF 2SC2295 2SA1022 2SA1022 2SC2295

    2SC2290

    Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
    Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp

    BC238BP

    Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323


    Original     		PDF 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC399 BC238BP BF494C BC238CP BSX77 2N295 BF194 2N2954 bf494 motorola BF332

    2SA1022

    Abstract: 2SC2295
    Text: Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2SC2295 2SA1022 20ues, 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SC2295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High transition frequency fT. 1 0.55 Optimum for RF amplification of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC2295 OT-23

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High frequency voltage fT • Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SA1022 2SC2295 20ues, 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295 2SA1022 2SC2295

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC2292 vce 500v NPN Transistor NPN Transistor 1A 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver


    Original     		PDF 2SC2292 vbe 10v, vce 500v NPN Transistor 2SC2292 vce 500v NPN Transistor NPN Transistor 1A 400V

    Untitled

    Abstract: No abstract text available
    Text: 2SC2297 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)55ã V(BR)CBO (V)55 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.45 h(FE) Max. Current gain.150


    Original     		PDF 2SC2297 Freq130M StyleTO-220AB

    60WpEp

    Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep -30dB 961001EAA2' 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290

    2SC2290

    Abstract: 12ID 2SC2290 equivalent
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep 000MHz 001MHz 961001EAA2' 2SC2290 12ID 2SC2290 equivalent

    2SC2879

    Abstract: 150PEP
    Text: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32


    OCR Scan     		PDF 30MHz 10-12PEP 20PEP 60PEP 100PEP 150PEP 200PEP 2SC2395 2SC2099 2SC2290 2SC2879

    2SC2290

    Abstract: 2SC2290 equivalent
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 ~3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power PO=60WPEP Minimum Gain Gpe=ll.8dB Efficiency nc=35/¡ (Min.) IMD=-30dB(Max.)


    OCR Scan     		PDF 2SC2290 28MHz 60WPEP -30dB Iidle-50mA, 60WpEP 150pF 200pF 2SC2290 2SC2290 equivalent

    2SC2298A

    Abstract: No abstract text available
    Text: HITACHI 2SC2298 S IL IC O N N P N E P ITA X IA L H IG H G A IN A M P L IF IE R If f 1 j-i— O; i 1. Rtroiîçr 'T O \ *i IS 2. O t ic v f o r y H;«m l>t»i»cn%K>os if* mm (J E D E C T O -1 2 6 M O O .) I A B S O L U T E M A X IM U M R A T IN G S {Ta=25"C)


    OCR Scan     		PDF 2SC2298 2SC229R 2SC2298A

    2sc2298

    Abstract: No abstract text available
    Text: 2SC2298 Silicon NPN Epitaxial HITACHI Application High gain amplifier Outline TO-126 MOD Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to base voltage ^C B O 30 V C ollector to em itter voltage VCEQ 30 V Emitter to base voltage


    OCR Scan     		PDF 2SC2298 O-126 2sc2298

    Untitled

    Abstract: No abstract text available
    Text: 2SC2298 Silicon NPN Epitaxial HITACHI Application High gain amplifier Outline TO-126 MOD 2 O 1. Em itter 2. Collector 3. Base h *_K ^ 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O 30 V Collector to em itter voltage


    OCR Scan     		PDF 2SC2298 O-126 D-85622