2SC2290
Abstract: 2SC2290A
Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2SC2290A
30MHz
28MHz
60WPEP
-30dB
2SC2290
2SC2290A
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2SC2290
Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)
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2SC2290
30MHz
28MHz
60WPEP
-30dB
001MHz
000MHz,
2SC2290
TRANSISTOR 2sC2290
2SC2290 equivalent
60WpEp
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2sc2290
Abstract: No abstract text available
Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2SC2290A
30MHz
28MHz
60WPEP
-30dB
2-13B1A
2sc2290
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2SC2290 equivalent
Abstract: 2SC2290A 2SC2290 60WPEP
Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2SC2290A
30MHz
28MHz
60WPEP
-30dB
2SC2290 equivalent
2SC2290A
2SC2290
60WPEP
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2SC2290
Abstract: TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22
Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2SC2290
30MHz
28MHz
60WPEP
-30dB
001MHz
000MHz,
2SC2290
TRANSISTOR 2sC2290
Linear IC Guide
2-13B1A
2SC22
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POWER 28V 3A 60W
Abstract: 0809LD60 200 watt hf mosfet
Text: R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QT Common Source The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
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991602-BEHRE
0809LD60
0809LD60
900MHz,
60WPEP,
POWER 28V 3A 60W
200 watt hf mosfet
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POWER 28V 3A 60W
Abstract: 0809LD60P 200 watt hf mosfet mosfet ghz
Text: R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
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991602-BEHRE
0809LD60P
0809LD60P
900MHz,
60WPEP,
POWER 28V 3A 60W
200 watt hf mosfet
mosfet ghz
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An Introduction to Broadband Impedance Transformation for RF Power Amplifiers
Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T
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AN-721,
An Introduction to Broadband Impedance Transformation for RF Power Amplifiers
transistor substitution chart
michael hiebel fundamentals of vector analysis
broadband impedance transformation
smith
AN-721
MOTOROLA small signal transistors
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2SC2290
Abstract: 12ID 2SC2290 equivalent
Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)
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2SC2290
30MHz
28MHz
60Wpep
000MHz
001MHz
961001EAA2'
2SC2290
12ID
2SC2290 equivalent
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2SC2290
Abstract: 2SC2290 equivalent
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 ~3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power PO=60WPEP Minimum Gain Gpe=ll.8dB Efficiency nc=35/¡ (Min.) IMD=-30dB(Max.)
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2SC2290
28MHz
60WPEP
-30dB
Iidle-50mA,
60WpEP
150pF
200pF
2SC2290
2SC2290 equivalent
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2-13B1A
Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)
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2SC2290
28MHz
60WpEP
--30dB
961001EAA2'
2-13B1A
Transistor S5B
2SC2290 equivalent
2sc2290
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain
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2SC2290
28MHz
60WpEP
961001EAA2'
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60WpEp
Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)
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2SC2290
30MHz
28MHz
60Wpep
-30dB
961001EAA2'
10WV
12ID
2SC2290
the industrial linear
0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T
2-13B1A
J-021
TRANSISTOR 2sC2290
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SD1405
Abstract: No abstract text available
Text: S G S -T K O M S O N SD1405 \u RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ . ■ ■ 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION ■ P out = 75 W MIN. WITH 13 dB GAIN DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon
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SD1405
SD1405
GD7D42S
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