2SB932 Search Results

2SB932

Abstract: 2SD1255
Contextual Info: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)

2SD1255

Abstract: 2SB932
Contextual Info: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB932 ■ Features • Low collector-em itter saturation voltage V cf (mu • Good linearity of DC c u rre n t gain (hht)

Contextual Info: Product specification 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

Contextual Info: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features 2.0 2.54±0.3 5.08±0.5 ea s ht e v tp is :// it

2SB932

Abstract: 2SD1255
Contextual Info: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current

2SB0932

Abstract: 2SB932
Contextual Info: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

Contextual Info: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SB0932

Abstract: 2SB932 3004 IC
Contextual Info: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO

2SB0932

Abstract: 2SB932 2SD1255
Contextual Info: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current

2SB932

Abstract: 2SD1255
Contextual Info: Power Transistors 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –4

2SB932

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127

Contextual Info: Power Transistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 Unit ! mm • Features 8.7 max. • L ow co lle cto r-e m itte r satu ration voltage V ceim» 6.5 max. I» "I 3.7 max. F— -

PNP 157A

Abstract: 2SB932 2SD1255 hi-ki J3010 IB-015
Contextual Info: Power T ransistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 • Features Unit ! mm , • G o o d lin e a rity of D C c u r re n t gain 3.7 max. 8.7 max. • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e CVceimd

Contextual Info: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 10.0±0.3 1.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200