2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V
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2SD2222
2SB1470
2SB1470
2SD2222
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2SB1470
Abstract: 2SD2222 IC7A TO-3PL
Text: Inchange Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1470
2SD2222
-160V;
2SB1470
2SD2222
IC7A
TO-3PL
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2SB1470
2SD2222
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160
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2SB1470
2SD2222
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2SD2222
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2SD2222
Abstract: 2SB1470
Text: Product Specification www.jmnic.com 2SD2222 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1470 ・High forward current transfer ratio hFE ・Low saturation voltage VCE sat ・DARLINGTON APPLICATIONS ・For power amplification
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2SD2222
2SB1470
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2SB1470
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2SB1470
Abstract: 2SD2222
Text: SavantIC Semiconductor Product Specification 2SD2222 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE sat ·DARLINGTON APPLICATIONS ·For power amplification PINNING
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2SD2222
2SB1470
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1470 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)
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2SD2222
2SB1470
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 2.0 (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 • Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating
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2SD2222
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 Unit: mm 4.0 Parameter Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage
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2SD2222
2SB1470
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2SD2222
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2SB1470
Abstract: 2SD2222 IC-303
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V
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2SD2222
2SB1470
2SB1470
2SD2222
IC-303
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2SB1470
Abstract: 2SD2222
Text: SavantIC Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1470
2SD2222
-160V;
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2SD2222
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2sb1470
Abstract: No abstract text available
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160
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2SD2222
2sb1470
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2SB1470
Abstract: No abstract text available
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V Emitter-base voltage (Collector open)
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2SD2222
2SB1470
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2SD2222
Abstract: 2SB1470
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open)
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2SD2222
2SB1470
2SD2222
2SB1470
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 160 V Emitter-base voltage (Collector open)
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2SD2222
2SB1470
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2SB1496
Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508
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2SB1464
2SB1465
-200u
2SB1466
2SB1467
2SB1468
2SB1469
2SD2275
2SB1502
2SD2276
2SB1496
2SB1516
2sb148
2SB1467
2SB1468
2SB1470
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SB897
Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
Text: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774
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2SA1709
2SA1704
2SB1434
2SA1692
2SB1117
2SB1452
2SA1832
2SA1836
2SA1774
2SB881
2SB897
2SB1483
2SB1453
2SB348
2sb1497
2SA1692
2SA1776
2sb1355
2SB1370
2SB973
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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