2SB1502 Search Results

2SB1502

Abstract: 2SD2275 2sb15
Contextual Info: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120

Contextual Info: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 4.0 6.0 3.0 20.0±0.5 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage

2SB1502

Contextual Info: ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: Vce(sat)= -2.5V(Max.)@lc= -4A

Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage VCBO VCEO Emitter to base voltage VEBO Peak collector current

2SB1502

Abstract: 2SD2275 2sb15
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120

Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1496

Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Contextual Info: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SB1502 TRANSISTOR

Abstract: 2SB1502 2SD2275
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5

D2029

Abstract: D2328 2SD2340 2SD1641
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors VcEO (V) 50 100 140 Application Functions General-use lc (A) 7 5 7 10 15 20 6 6 20 4 10 3 80 Low VcE(sad 150 200 400 55 60 80/100 Darlington High-hre VcE(sat) (V)

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691