2SB1261 Search Results

2SB1261 Result Highlights (5)

Part	Manufacturer	Description
2SB1261(0)-Z-E1-AY	Renesas Electronics Corporation	Bipolar Power Transistors, MP-3Z, /
2SB1261(0)-Z-E2-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, MP-3Z, /
2SB1261(0)-Z-E1-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, MP-3Z, /
2SB1261-Z-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, MP-3Z, /
2SB1261(0)-Z-AZ	Renesas Electronics Corporation	Bipolar Power Transistors

2SB1261 Price and Stock

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Micro Commercial Components 2SB1261-TP TRANS PNP 60V 3A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1261-TP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SB1261(1)-AZ 2SB1261 - PNP SILICON EPITAXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1261(1)-AZ	Bulk			359	1 - 10 - 100 - 1000 $0.84 10000 $0.84	Buy Now
Renesas Electronics Corporation 2SB1261(1)-AZ 2SB1261(1)-AZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB1261(1)-AZ		6,207		397	1 - 10 - 100 - 1000 $0.8546 10000 $0.8546	Buy Now
Rochester Electronics	2SB1261(1)-AZ		6,207		1	1 $0.8043 10 $0.8043 100 $0.756 1000 $0.6837 10000 $0.6837	Buy Now
NEC Electronics Group 2SB1261-Z-E1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB1261-Z-E1		1,215			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SB1261(0)-Z-E1-AZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB1261(0)-Z-E1-AZ		931			1 $1.66 10 $1.66 100 $0.83 1000 $0.664 10000 $0.664	Buy Now

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2SB1261 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1261	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SB1261	NEC	Semiconductor Selection Guide	Original	PDF
2SB1261	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1261	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1261	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1261	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1261	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1261	NEC	Silicon power transistor	Scan	PDF
2SB1261(1)-AZ	Renesas	2SB1261 - PNP SILICON EPITAXIAL	Original	PDF
2SB1261-TP	Micro Commercial Components	TRANS PNP 60V 3A DPAK	Original	PDF
2SB1261-Z	Kexin	PNP Silicon Epitaxial Transistor	Original	PDF
2SB1261-Z	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SB1261-Z	NEC	Semiconductor Selection Guide	Original	PDF
2SB1261-Z	Transys Electronics	Plastic-Encapsulate Transistors	Original	PDF

2SB1261-Z	TY Semiconductor	PNP Silicon Epitaxial Transistor - TO-252	Original	PDF
2SB1261Z	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1261Z	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1261Z	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1261-Z	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1261Z	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SB1261 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1261-Z Abstract: high hfe transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 1 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V	Original	PDF	O-251 2SB1261-Z O-251 -200mA -600mA -150mA 2SB1261-Z high hfe transistor
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)	Original	PDF	O-251 2SB1261-Z O-251 -200mA -600mA -150mA
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components 2SB1261 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics	Original	PDF	2SB1261
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components Features x x • • 2SB1261 omponents 20736 Marilla Street Chatsworth !"# $ % !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics	Original	PDF	2SB1261
2SB1261-Z Abstract: No abstract text available Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2	Original	PDF	2SB1261-Z O-252 2SB1261-Z
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	PDF	O-252 2SB1261
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components Features x x • • • 2SB1261 omponents 20736 Marilla Street Chatsworth !"# $ % !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics	Original	PDF	2SB1261
Untitled Abstract: No abstract text available Text: 2SB1261 Transistor PNP TO-252-2L 1. BASE 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	PDF	2SB1261 O-252-2L -200mA -600mA -150mA
Z Transistor Abstract: 2SB1261-Z Text: 2SB1261-Z 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	PDF	2SB1261-Z O-252 -200mA -600mA -150mA Z Transistor 2SB1261-Z
2SB1261 Abstract: W4150 1261-Z 1261 Text: データ・シートシリコン・パワー・トランジスタ Silicon Power Transistors 2SB1261,1261-Z PNP エピタキシアル形シリコン・トランジスタ低周波電力増幅，中速度スイッチング外形図（単位：mm）小形外形でありながら大電流特性を有しており，スイッチング速度	Original	PDF	2SB1261 1261-Z Cycle50 OTO-251MP-3 VCEO-60 O-252MP-3Z D18262JJ4V0DS004 D18262JJ4V0DS W4150 1261-Z 1261
2SB1261 Abstract: high hfe transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO-252-2L FEATURES 123 1. BASE z z 1 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	O-252-2L 2SB1261 O-252-2L -200mA -600mA -150mA 2SB1261 high hfe transistor
2SB1261-Z Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO:	Original	PDF	O-252 2SB1261-Z O-252 -200mA -600mA -150mA 2SB1261-Z
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)	Original	PDF	2SB1261-Z 2SB1261-Z
Untitled Abstract: No abstract text available Text: Product specification 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 5.55 -0.15 -0.3V. +0.15 0.50 -0.15	Original	PDF	2SB1261-Z O-252

to251 Abstract: 2SB1261Z 2sb1261 l 2sb1261 Text: 2SB1261-Z PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-251/TO-252-2L 2SB1261-Z O-251 O-252-2L -200mA -600mA -150mA to251 2SB1261Z 2sb1261 l 2sb1261
2SB1261-Z Abstract: 2SB1261Z Text: Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range	Original	PDF	O-252 2SB1261-Z O-252 -200mA -600mA -150mA 2SB1261-Z 2SB1261Z
D1826 Abstract: 2SB1261 2SB1261-Z 2sb126 Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)	Original	PDF	2SB1261-Z 2SB1261-Z D1826 2SB1261 2sb126
2SB1261 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	2SB1261 1261-Z O-251MP-3 VCEO-60 O-252MP-3Z D18262JJ4V0DS004 D18262JJ4V0DS
MMS8050-L Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.	Original	PDF	MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
HF-62 Abstract: No abstract text available Text: SILICON TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 D ESC R IPT IO N 2 S B 1 2 6 1 -Z is design ed for A u d io Frequency A m plifier and PACKAGE DIMENSIONS in millimeters Sw itching, especially in H ybrid integrated Circuits. FE A T U R E S	OCR Scan	PDF	2SB1261-Z MSI-1209} HF-62
2SB1261-Z Abstract: MEI-1202 2sb1261 l 2SB1261 Text: DATA SHEET N E ^ r C SILICON TRANSISTOR 2 S B 1 2 6 1 -Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SB1261-Z is designed for Audio Frequency Amplifier and PACKAGE DIMENSIONS in millimeters Switching, especially in Hybrid Integrated Circuits. FEATURES	OCR Scan	PDF	2SB1261-Z 2SB1261-Z IEI-1209) MEI-1202 2sb1261 l 2SB1261
2SB1621 Abstract: No abstract text available Text: SILICO N TR A N SISTO R 2SB1261-Z P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M P -3 D E S C R IP T IO N 2 S B 1 2 6 1 - Z is d e sig n e d fo r A u d i o F r e q u e n c y A m p lif ie r a n d S w it c h in g , e sp e c ia lly in H y b r id In te g ra te d C irc u its.	OCR Scan	PDF	2SB1261-Z 2SB1621-Z 2SB1621
2sb1355 Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770 Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^	OCR Scan	PDF	2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
2SB1232 Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 Text: - 82 - 5 Ta=25cC, EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004	OCR Scan	PDF	2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

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2SB1261 Search Results

2SB1261 Result Highlights (5)

2SB1261 Price and Stock

Micro Commercial Components 2SB1261-TP

Rochester Electronics LLC 2SB1261(1)-AZ

Renesas Electronics Corporation 2SB1261(1)-AZ

NEC Electronics Group 2SB1261-Z-E1

Renesas Electronics Corporation 2SB1261(0)-Z-E1-AZ

2SB1261 Datasheets (25)

2SB1261 Datasheets Context Search

2SB1261-Z

Untitled

Untitled

Untitled

2SB1261-Z

Untitled

Untitled

Untitled

Z Transistor

2SB1261

2SB1261

2SB1261-Z

Untitled

Untitled

to251

2SB1261-Z

D1826

2SB1261

MMS8050-L

HF-62

2SB1261-Z

2SB1621

2sb1355

2SB1232