2SB1185
Abstract: 2SD1762
Text: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION
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2SB1185
O-220Fa
2SD1762
-500mA
2SB1185
2SD1762
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2SB1185
Abstract: 2SD1762 2sb118
Text: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING
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2SB1185
O-220Fa
2SD1762
-500mA
2SB1185
2SD1762
2sb118
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2SB1185
Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type
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2SB1184
2SB1243
2SB1185
2SD1760
2SD1864
2SD1762.
96-128-B57)
2SB1185
hFE is transistor
2SD1762
96-128-B57
power transistor 3A
transistor 2SB1243
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2SB1185
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60
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O-220
2SB1185
O-220
30MHz
2SB1185
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier
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O-220
2SB1185
2SD1762
30MHz
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Untitled
Abstract: No abstract text available
Text: 2SB1185 Plastic-Encapsulate Transistors PNP Features TO-220 Power dissipation PCM: 2 W Tamb=25℃ Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER
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2SB1185
O-220
30MHz
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2SD1762
Abstract: 2SB1185
Text: Inchange Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SB1185 APPLICATIONS ・For low frequency power amplifier applications PINNING
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2SD1762
O-220Fa
2SB1185
O-220Fa)
30MHz
2SD1762
2SB1185
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2SD1760
Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1760
2SD1864
2SD1762
2SB1184
2SB1243
2SB1185.
96-214-D57)
2SD1762
2SB1185
96214
2sb118
Transistor npn
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220F FEATURES Low VCE(sat): VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) 1. BASE 2. COLLECTOR MAXIMUM RATINGS* Ta=25℃ unless otherwise noted Symbol
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O-220F
2SB1185
O-220F
30MHz
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2SB1185
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range
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O-220
2SB1185
O-220
30MHz
2SB1185
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2SB1185
Abstract: No abstract text available
Text: 2SB1185 2SB1185 TRANSISTOR PNP TO-220 FEATURES 1. BASE Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SB1185
O-220
30MHz
2SB1185
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2SB1185
Abstract: transistor 2sb1185 2SD1762
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762
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2SB1185
2SD1762
30MHz
2SB1185
transistor 2sb1185
2SD1762
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2SD1762
Abstract: 2SB1185
Text: SavantIC Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN
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2SD1762
O-220Fa
2SB1185
O-220Fa)
30MHz
2SD1762
2SB1185
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2SB1185
Abstract: 2SD1762
Text: Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications
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2SB1185
O-220Fa
2SD1762
-500mA
2SB1185
2SD1762
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SB1185
Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re
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2SB1184/2SB1243/2SB1185
2SD1760/
2SD1864/2SD1762.
2SB1184
2SB1243
SC-63
2SB1185
O-220FP
SC-67
2SB1185
2SB11B4
2SB1184
2SB1243
2SD1760
transistor 2sb1185
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d 1762
Abstract: No abstract text available
Text: h -7 > v X £ /Transistors 2SB1185 7 1 7 ' i s - i - M P N P y ' J ^ > b y > 2 S B 1 1 8 5 v X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • v H ilS l/ D in ie n sio n s U n it: mm) 1 ) V cE (sat) V c E ( s a t ) = - 0 .5 V ( T y p . )
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2SB1185
2SD1762
111Base
d 1762
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B1185
Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.
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1184/2S
B1243/2S
B1185
2SB1184/2SB1243/2SB1185
O-126
O-220,
0Dlb713
O-220FN
O-220FN
O220FP
B1185
b1243 TRANSISTOR
transistor b1185
TRANSISTOR B1243
b1185 transistor
2SB1185
R B1185
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2SD1762
Abstract: 230S d1760 D1864
Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type
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2SD1760/2SD1864/2SD1762
2SB1184/
1243/2SB1185.
2SD1760
2SD1864
2SD1762
O-126
O-220,
0Dlb713
230S
d1760
D1864
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TRANSISTOR d1760
Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type
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2SD1760/2SD1864/2SD1762
2SB1184/2SB1243
/2SB1185.
2SD1760
2SD1864
65Max.
SC-63
2SD1762
2sd1760
2sd1864
TRANSISTOR d1760
TRANSISTOR d1762
D1762
D1864
d1760
d1760 NPN Transistor
2SD1762
transistor 1002
d1762 f g
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2sB1185
Abstract: No abstract text available
Text: / I ransistors h -7 O C D A Q 4 C 2SB1185 i k ^ ;i f y 7 i i ' 7 , l / - t ^ P N P '> U = i> h 7 > y ' 7 ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • £t-Jfi^Ji±[2|/Dimensions U n it: mm 1) VcE(sat) t f - 0 . 5 V ( T y p . lir 'f g v - 'o
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2SB1185
2SD1762
-22QFP
2SB1185
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2SD1761
Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
Text: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215
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2SB1184
2sb1184f5
2SBU85
2SB1186
2sb1186a
2sb1187
2SB1188
2SB1209
2SD1812
SC-51
2SD1761
2sb1216
2SB1220
2sb118
2SB1204
2SB1208
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b1185
Abstract: b1184 y206
Text: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .
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2SB1184/2SB1243/2SB1185
96-128-B57)
2SB1184
2SB1243
2SB1185
2SB1184)
2SB1243)
2SB1185)
b1185
b1184
y206
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3SK212
O-220,
O-220FP,
2SD1562
2SB1085
2SD1763
2SB1186
2SD2033
2SB1353
2SD1562A
2SB1335A
2SD2037
2SD2061
28c43
2sb1357
2SB1359
2sd2041
2SD2096
2SD1856
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