2SB1070A Search Results

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Rower T ransistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD 1538, 2SD 1538A Unit : mm 6.7m«x. • Features • t o w collector-eimitter saturation voltage • High speed switching

Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 3.4±0.3 8.5±0.2 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Low collector to emitter saturation voltage VCE sat

Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 1.0±0.1 Unit VCBO −40 V 2SB1070 −20 VCEO Emitter-base voltage Collector open VEBO −5 V IC −4 A ICP −8 A PC 25 W Tj 150 °C Tstg −55 to +150

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE sat High-speed switching

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE sat High-speed switching

Contextual Info: Product specification 2SB1070A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1

P-862

Abstract: 2SB1070 2SB1070A 2SD1538 2SD1538A
Contextual Info: 2 SD 1 5 3 8 , 2 SD 1 5 3 8 A P o w e r T ra n s is to rs 2S D 1538, 2S D 1538A Silicon NPN Epitaxial Planar Type Package D im ensions Low V oltage Sw itching C om plem entary Pair with 2SB1070, 2SB1070A U n it I mm • Features 8 .7 r • L o w c o lle c to r - e m itte r s a t u r a t io n v o lta g e V cE isao

NJ 15 U1 W

Contextual Info: Power Transistors 2SD1538, 2SD1538A 2SD1538, 2SD1538A Silicon NPN Epitaxial Planar Type • Package D im ensions Low V oltage Sw itching C om plem enta ry Pair w ith 2SB1070, 2SB1070A U n it I mm ■ Features 8.7 r • Low collector-em itter saturation voltage VcEisao

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A tk 100 A p257
Contextual Info: Rower Transistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD1538, 2SD1538A U nit : mm 3.7 m ix. f—* • Features 6.5 max. • to w collector-eim itter saturation voltage Vceo.»

2SB1070A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1070A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB1070

Abstract: 2SB1070A
Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 6.0±0.2 1.0±0.1 Rating Unit VCBO −40 V −20 Collector-emitter voltage 2SB1070 Base open 2SB1070A VCEO Emitter-base voltage (Collector open) VEBO

2SB1070

Abstract: 2SB1070A
Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Symbol Rating Unit VCBO −40 V 2SB1070 2 −50 2SB1070A Collector-emitter voltage 2SB1070 Base open 2SB1070A VCEO Emitter-base voltage (Collector open)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1039

Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063

2SD1557

Abstract: 2-16E3A 2sD1555 2SD1546 2SD1554 2S01554 2S01555 2SD1539 2SD1548 2SD1558
Contextual Info: - 254 - /-r t± fi ffl m VCBO V Vc e o (V) Pc* Ic(DO (W) V cB (u A) (W) (Ta=25tí) h ICBO. (max) (A) M. tfï 4# 14 M (Ta=25DO t *EPfäTc=25lC ) WM (max) (min) (V) (V) / / \ " \ (max) Ic/ iE (A) VcE [tEPÍátypfil] (V) (V) le (A) Ib (A) 2SD1538A föT LV SW