2SA64 Search Results

2SA648

Contextual Info: AOK AOK Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation APPLICATIONS • For low frequency and large power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN

2SA647

Abstract: 2SC1157
Contextual Info: SavantIC Semiconductor Product Specification 2SC1157 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION

2SD261

Abstract: 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095
Contextual Info: 2SA643 2SA643 PNP x U S IL IC O N E P IT A X IA L T R A N S IS T O R Frequency Pow er A m p lifie r 1# /F E A T U R E S W E I/P A C K A G E DIMENSIONS Unit-.mm S u ita b le f o r aud io p o w er ou tp u t a p p lica tio n s. • a. 2. OW g S S r i i -5 r i: # T ' i -5»

Contextual Info: t One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA648 DESCRIPTION • Collector-Emitter Breakdown Voltage:V ( BR)CEO=-120V(Min.) • Wide Area of Safe Operation

2SA646

Abstract: 2SC1156
Contextual Info: Inchange Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION

2sa649

Abstract: transistor a4u
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA649 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.) • Wide Area of Safe Operation

2SC1000

Abstract: 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373 2SA640 2SA673A
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. MAXIMUM RATINGS POLA­ RITY CASE 2SA561 2SA564 2SA564A 2SA640 2SA641 P P P P P 2SA666 2SA666A 2SA673A 2SA721 2SA722 H FF- VcE sal fT min max le (mA) (MHz) (MHz) C 0b N.F. max le (mA) VCE (V) max 400 tt 700 tt

2SA649

Abstract: transistor 2sa649
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA649 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

Contextual Info: Tab l e Item 4 à 2 A LTR. D A T E BY REV. D E S C R I PT DATE SCALE O C T .0 2 .2 0 01 2/1 No. UN I T mm I N C H N u m b e r Materials of Alignment Sleeves LGC-2SA641 Z i rc o n i a LG C -2SA641P P h o s p h o r b ro n z e Co lor:Wh i te Cap PBT R esin

2SC644

Abstract: 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015
Contextual Info: Low Level and General Purpose Amplifiers TY PE PO LA ­ NO. RITY CASE M A XIM UM RATINGS Pd IC VCEO mW (mA) (V) H FE min VCE(sat) max fT Cob N.F. ic VCE max IC max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) m in 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P

2SA642

Abstract: 0J01
Contextual Info: Transistors 2SA642 USHA INDIA LTD BASE-EMITTER ON VOLTAGE lc (mA), COLLECTOR CURRENT STATIC CHARACTERISTIC V ce (V), CO LLECTOR-EM ITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE hFE, DC CURRENT GAIN DC CURRENT GAIN V b e (V), BASE-EMITTER VOLTAGE

2SA64

Abstract: 2SA649 2SA649 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SA649 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC923

Abstract: transistor 2sc923 2SA641 2SC923 E F 251C 300TYP PA33
Contextual Info: 2SA641 2SA641 PNP U rj > h a V J & / PNP S IL IC O N E P IT A X IA L T R A N S IS T O R A lu m in a P assivation) 9<tWm/PACKAGE Frequency High Gain A m p lifie r & DIMENSIONS (Unit:mm) ^/FEATURES iif e :3 o o ty p . a c = -o .5 m A ) • 2SC923 t y ? ') j> y ? ') T ' & j L Z o

2SA643

Contextual Info: Transistors 2SA643 USHA INDIA LTD STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE V ce (V), COLLECTOR-EMITTER VOLTAGE 0.5 0.2 - 0.4 V b e (V ), - 0.6 - 0.8 - 1.0 - 1.2 BASE-EMITTER VOLTAGE DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE

2SA648

Contextual Info: SavantIC Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2sa649

Contextual Info: SavantIC Semiconductor Product Specification 2SA649 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SD227

Abstract: 2SA642 251C PA33 power transistor audio amplifier 500 watts
Contextual Info: 2SA642 2SA642 PNP x + U =1 V h 7 V i / * ? / P N P SILICON EPIT A X IA L TRANSISTOR ffiS i& itiÌJÌftÌlffl/ A u d io Frequency Power Amplifier ft ^ / F E A T U R E S V tts . • «•JOT/PACKAGE DIMENSIONS Unit:mm Suitable fo r audio pow er o u tp u t applications.

2SC644

Abstract: 2SC1000 2SA1715 2SC1222 2SC1330 2SC923 2SC828 2SC1815 2SA641 2SC372
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ RITY CASE 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P P TO-92B TO-92B TO-92B TO-92B TO-92B 250 250 250 400 150 50 50 50 500 50 45 25 45 50 35 100 130 130 60 180 700 700 700 320 1040 2SA722 2SA876H 2SA888

2sa648 transistor

Abstract: 2SA648
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA648 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.

2Sc945 equivalent

Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560

2SA649

Contextual Info: AOK Product Specification AOK Semiconductor 2SA649 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation APPLICATIONS • For low frequency and large power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN

2SA646

Abstract: 2SC1156 TO-202 Package
Contextual Info: SavantIC Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION

2SA647

Abstract: 2SC1157 2SC115
Contextual Info: Inchange Semiconductor Product Specification 2SC1157 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION