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Toshiba America Electronic Components 2SA2097(TE16L1,NQ) TRANS PNP 50V 5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA2097(TE16L1,NQ)	Digi-Reel	1,235		1	1 $1.16 10 $0.73 100 $1.16 1000 $0.33871 10000 $0.33871	Buy Now
	2SA2097(TE16L1,NQ)	Cut Tape	1,235		1	1 $1.16 10 $0.73 100 $1.16 1000 $0.33871 10000 $0.33871	Buy Now
	2SA2097(TE16L1,NQ)	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.25875	Buy Now
Avnet Americas	2SA2097(TE16L1,NQ)	Reel		18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.29394	Buy Now
Mouser Electronics	2SA2097(TE16L1,NQ)		1,914			1 $1.02 10 $0.664 100 $0.449 1000 $0.322 10000 $0.258	Buy Now
Verical	2SA2097(TE16L1,NQ)		451		31	1 - 10 - 100 $0.485 1000 $0.4838 10000 $0.4838	Buy Now
Avnet Asia	2SA2097(TE16L1,NQ)			24 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	2SA2097(TE16L1,NQ)	Cut Tape	880			1 - 10 $0.828 100 $0.388 1000 $0.309 10000 $0.309	Buy Now
Toshiba America Electronic Components 2SA2097 (TE16L1,NQ)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA2097 (TE16L1,NQ)		465			1 $3.582 10 $3.582 100 $3.582 1000 $1.9701 10000 $1.9701	Buy Now
Toshiba America Electronic Components 2SA2097TE16L1NQ Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SA2097TE16L1NQ		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SA2097 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA2097	Toshiba	Transistor	Original	PDF
2SA2097	Toshiba	PNP transistor	Original	PDF
2SA2097(TE16L1,NQ)	Toshiba	2SA2097 - TRANSISTOR PNP 50V 5A SC-62	Original	PDF

2SA2097 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor A2097 Abstract: 2SA2097 A2097 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 transistor A2097 2SA2097 A2097	PDF
A2097 Abstract: 2SA2097 Text: 2SA2097 東芝トランジスタシリコンPNPエピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.27 V (最大)	Original	2SA2097 20070701-JA A2097 2SA2097	PDF
2sa2097 Abstract: transistor A2097 A2097 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)	Original	2SA2097 2sa2097 transistor A2097 A2097	PDF
transistor A2097 Abstract: No abstract text available Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 transistor A2097	PDF
2SA2097 Abstract: transistor pnp a110 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 2SA2097 transistor pnp a110	PDF
transistor A2097 Abstract: A2097 2SA2097 2SA20 transistor 2SA2097 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 SC-64 transistor A2097 A2097 2SA2097 2SA20 transistor 2SA2097	PDF
transistor A2097 Abstract: A2097 2SA2097 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 transistor A2097 A2097 2SA2097	PDF
Untitled Abstract: No abstract text available Text: 2SA2097 東芝トランジスタシリコン PNP エピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm : h FE = 200~500 I C = −0.5 A • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: V CE (sat) = −0.27 V (最大)	Original	2SA2097	PDF
A2097 Abstract: transistor A2097 2SA2097 Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 SC-64 A2097 transistor A2097 2SA2097	PDF
transistor A2097 Abstract: No abstract text available Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097 SC-64 transistor A2097	PDF
Untitled Abstract: No abstract text available Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)	Original	2SA2097	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF

TB6815FTG Abstract: out8 tb6815f Text: TB6815FTG 東芝BiCD集積回路シリコンモノリシック TB6815FTG 6bit 入力 12bit 出力レベルシフタアレイ基準電圧用バッファ混載 IC 特長・6bit 入力 12bit 出力のレベルシフタと 2ch の基準電圧用バッファを混載しています。	Original	TB6815FTG 12bit TB6815FTG Sn-37Pb OUT10 OUT11 OUT12 out8 tb6815f	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
SSOP30 Abstract: BMP89A400010A-G TCA62746AFG/AFNG Text: EYE 6 June 2007 東芝半導体情報誌アイ 2007年6月号 VOLUME 178 CONTENTS 新製品情報広出力電圧範囲ロジックレベルシフタアレイ .2 FLASHマイコン用名刺サイズの小型オンチップデバッグエミュレータ.3	Original	TB6815FNG SSOP30-P-300-0 OUT10 OUT11 OUT12 6bit12bit 0mmSSOP24 TB62746AFG) SSOP24 SSOP30 BMP89A400010A-G TCA62746AFG/AFNG	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
transistor 2sc5353 Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000	Original	DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA	PDF
2SC4793 2sa1837 Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303 Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688	Original	2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF

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2SA2097 Search Results

2SA2097 Price and Stock

Toshiba America Electronic Components 2SA2097(TE16L1,NQ)

Toshiba America Electronic Components 2SA2097 (TE16L1,NQ)

Toshiba America Electronic Components 2SA2097TE16L1NQ

2SA2097 Datasheets (3)

2SA2097 Datasheets Context Search

transistor A2097

A2097

2sa2097

transistor A2097

2SA2097

transistor A2097

transistor A2097

Untitled

A2097

transistor A2097

Untitled

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

TB6815FTG

GT30F124

transistor bc 245

SSOP30

2SA1941 amp circuit

2sC5200, 2SA1943

transistor 2sc5353

2SC4793 2sa1837

GT45F122

GT30J124