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    3M Interconnect 1U30G-MB2-SA1-350

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30G-MB2-SA1-350 Bulk 25 1
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    3M Interconnect 1U30A-MB2-SA1-350

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-350 Bulk 14 1
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    3M Interconnect 1U30S-MB2-SA1-350

    USB3 CABLE ASSEMBLY 3.5 METER
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    DigiKey 1U30S-MB2-SA1-350 Box 14 1
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    Mouser Electronics 1U30S-MB2-SA1-350 50
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    Interstate Connecting Components 1U30S-MB2-SA1-350 6
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    Rochester Electronics LLC 2SA1352E

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey 2SA1352E Bulk 987
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    Aptina Imaging 2SA1352E

    Trans GP BJT PNP 200V 0.1A 1200mW 3-Pin TO-126
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    Verical 2SA1352E 12,045 1,207
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    2SA135 Datasheets (153)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA135 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA135 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA135 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA135 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA135 Unknown Cross Reference Datasheet Scan PDF
    2SA135 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA135 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA135 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA1350 Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
    2SA1350 Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
    2SA1350 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SA1350 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1350 Unknown Silicon PNP Epitaxial Transistor Scan PDF
    2SA1350 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA1350 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1350 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1350 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1350 Unknown Cross Reference Datasheet Scan PDF
    2SA1350B Hitachi Semiconductor TRANS GP BJT PNP 30V 0.1A 3SPAK Original PDF
    ...

    2SA135 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3419

    Abstract: 2SC3419 2SA1356
    Text: 2SC3419 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。


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    PDF 2SC3419 2SA1356 20070701-JA C3419 2SC3419 2SA1356

    C3422

    Abstract: 2SC3422 2SA1359
    Text: 2SC3422 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3422 ○ 電力増幅用 ○ 低速度スイッチング用 単位: mm • hFE リニアリティが良好です。 • 2SA1359 とコンプリメンタリになります。


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    PDF 2SC3422 2SA1359 20070701-JA C3422 2SC3422 2SA1359

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR


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    PDF O-126C 2SC3421 2SA1358 100mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V


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    PDF O-126C 2SA1357 O-126C -10mA,

    A1357 transistor

    Abstract: a1357 2SA1357
    Text: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


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    PDF 2SA1357 A1357 transistor a1357 2SA1357

    2sa1359

    Abstract: 2sa135 2SC3422
    Text: Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car


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    PDF 2SA1359 O-126 2SC3422 2sa1359 2sa135 2SC3422

    2SA1353

    Abstract: 2SC3417 ITR03284 ITR03285
    Text: Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions • Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications.


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    PDF ENN1390D 2SA1353/2SC3417 2009B 2SA1353/2SC3417] VCEO300V. 2SA1353 O-126 2SA1353 2SC3417 ITR03284 ITR03285

    2SA1357

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range


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    PDF O-126C 2SA1357 O-126C -10mA, 2SA1357

    2sa1357

    Abstract: IC 2sa1357 70Vce
    Text: 2SA1357 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃


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    PDF 2SA1357 O-126C -10mA, 2sa1357 IC 2sa1357 70Vce

    2SA1357

    Abstract: A1357
    Text: 2SA1357 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1357 ○ ストロボフラッシュ ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −0.5 A) • hFE = 70 (最小) (VCE = −2 V, IC = −4 A)


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    PDF 2SA1357 20070701-JA 2SA1357 A1357

    2SA1359

    Abstract: 2SC3422 pnp hfe 120-240
    Text: JMnic Product Specification 2SA1359 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC3422 ・Good linearity of hFE APPLICATIONS ・Audio frequency amplifier ・Low speed switching ・Suitable for output stage of 5W car


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    PDF 2SA1359 O-126 2SC3422 2SA1359 2SC3422 pnp hfe 120-240

    2SA1355

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1355 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage. ・Short switching time. APPLICATIONS ・Various inductance lamp drivers for electrical equipment. ・Inverters, converters


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    PDF 2SA1355 O-220 O-220) 2SA1355

    D4060

    Abstract: 2SA1359
    Text: SILICON PNP EPITAXIAL TYPE 2SA1359 AUDIO FREQUENCY POWER AMPLIFIER. Unit in m m LOW SPEED SWITCHING. E3MAX. 2f5i±ai FEATURES: . Suitable for Output Stage of 5 Watts Car Radio and •ÏÏ- Car Stereo. . G o o d Line a r i t y of hpg. 1.0 MAX. . Complementary to 2SC3422.


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    PDF 2SA1359 2SC3422. -10mA, D4060 2SA1359

    2SA1015

    Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
    Text: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A


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    PDF 2SA1358 2SA1096 2SB1086 2SA934 2SA1015 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339

    A1359

    Abstract: SA1359 2SA1359 2SC3422
    Text: 2SA1359 TO SH IBA 2 SA 1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. • • • Suitable for Output Stage of 5 Watts Car Radio and Car Cotereu. l _ liood Linearity of hjpg. Complementary to 2SC3422.


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    PDF 2SA1359 A1359 2SC3422. A1359 SA1359 2SA1359 2SC3422

    2SA1356

    Abstract: 2SC3419 2sc341 2SA135
    Text: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)


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    PDF 2SA1356 500mA, 2SC3419 2SA1356 2sc341 2SA135

    2SA1357

    Abstract: No abstract text available
    Text: 2SA1357 TO SH IBA 2 S A 1 357 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO POWER AMPLIFIER APPLICATIONS MIN hFE of 70 at -2 V , -4A . —5A Rated Collector Current. MAX VcE(sat)of -1.0V at -4 A Iq . 10W at 25°C Case Temperature.


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    PDF 2SA1357 10mstransportation 2SA1357

    2SA1358

    Abstract: 2SC3421 A1358 TRANSISTOR A1358
    Text: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.


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    PDF 2SA1358 2SC3421 2SA1358 A1358 TRANSISTOR A1358

    2SA1358

    Abstract: 2SC3421
    Text: 2SC3421 T O S H IB A 2SC3421 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


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    PDF 2SC3421 2SA1358 2SA1358 2SC3421

    AC188

    Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A


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    PDF BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 2N2907A-PL 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD

    2SA1359

    Abstract: 2SC3422
    Text: AOK AOK Semiconductor Product Specification 2SA1359 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-126 package • Complement to type 2SC3422 • Good linearity o f hFE APPLICATIONS • Audio frequency amplifier • Low speed switching • Suitable for output stage of 5W ca r


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    PDF 2SA1359 O-126 2SC3422 2SC3422

    A1356 transistor

    Abstract: A1356 2SA1356 2SC3419
    Text: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)


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    PDF 2SA1356 500mA, 2SC3419 A1356 transistor A1356 2SA1356

    2SC3422

    Abstract: No abstract text available
    Text: 2SC3422 SILICON NPN EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER. Unit in mm LOW SPEED SWITCHING. FEAT U R E S : . Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. . Good Linerity of hpE. Complementary to 2SA1359. MAXIMUM RATINGS (Ta=25°C)


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    PDF 2SC3422 2SA1359. 2SC3422

    2sa1358

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.1 ¿Oil . Complementary to 2SC3421 . Suitable for Driver of 60 to 80 Watts. 3- . High Breakdown Voltage. 1.0MAX. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    PDF 2SA1358 2SC3421 -10mA, -100mA -500mA, -50mA -500mA -100mA 30LLEGT0R-EMITTER 2sa1358