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    2SA1307 Search Results

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    2SA1307 Price and Stock

    Toshiba America Electronic Components 2SA1307Y

    5 A, 50 V, PNP, Si, POWER TRANSISTOR
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    Quest Components 2SA1307Y 3
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    2SA1307 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1307 Various Russian Datasheets Transistor Selection Guide Original PDF
    2SA1307 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) Original PDF
    2SA1307 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1307 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1307 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1307 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1307 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1307 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1307 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1307 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1307 Unknown Cross Reference Datasheet Scan PDF
    2SA1307 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1307 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1307 Toshiba TO-220 Package Transistors Scan PDF
    2SA1307-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1307-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1307

    Abstract: 2SC3299
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 APPLICATIONS ·Designed for high current switching applications.


    Original     		PDF 2SA1307 2SC3299 2SA1307 2SC3299

    2SA1307

    Abstract: 2SC3299
    Text: 2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)


    Original     		PDF 2SA1307 SC-67 2SC3299 -150V 2SA1307 2SC3299

    2SA1307

    Abstract: 2SC3299
    Text: SavantIC Semiconductor Product Specification 2SA1307 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3299 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		PDF 2SA1307 O-220Fa 2SC3299 2SA1307 2SC3299

    Untitled

    Abstract: No abstract text available
    Text: Jbtmi-dondiLckoi ^Ptodutiti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SA1307 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VcEfsatr -0.4V(Max.)@lc= -3A


    Original     		PDF 2SA1307 2SC3299 O-220F

    2SC3299

    Abstract: 2SA1307
    Text: SavantIC Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		PDF 2SC3299 O-220Fa 2SA1307 2SC3299 2SA1307

    2SA1307

    Abstract: 2SC3299
    Text: JMnic Product Specification 2SA1307 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3299 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN


    Original     		PDF 2SA1307 O-220Fa 2SC3299 2SA1307 2SC3299

    2sc3299

    Abstract: 2SA1307
    Text: Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1307 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications


    Original     		PDF 2SC3299 O-220Fa 2SA1307 2sc3299 2SA1307

    2sa1307

    Abstract: 2sa130 2SC3299
    Text: Inchange Semiconductor Product Specification 2SA1307 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3299 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications


    Original     		PDF 2SA1307 O-220Fa 2SC3299 2sa1307 2sa130 2SC3299

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2sc3299

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CURREN T SW ITCH IN G APPLIC ATIO N S. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) at Ic = 3A High Speed Switching Time : tgtg = 1.0//s (Typ.) Complementary to 2SA1307


    OCR Scan     		PDF 2SA1307 2-10L1A 2SC3299 2sc3299

    2SC3299

    Abstract: No abstract text available
    Text: 2SC3299 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: JZÍ3.2±Q2 . Low Collector Saturation Voltage : VcE sat =0.4V(Max.) at Ic=3A . High Speed Switching Time : tstg=l.O/is (Typ.) . Complementary to 2SA1307


    OCR Scan     		PDF 2SC3299 2SA1307 2S03299 2SC3299

    2sa1307

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1307 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCUING APPLICATIONS. FEATURES : . Low Saturation Voltage ; V C E s a C =-0.4V(Max,) at Ic=-3A . High Speed Switching Time : tstg=l.0¿is (Typ .) . Complementary to 2SC3299


    OCR Scan     		PDF 2SA1307 2SC3299 2sa1307

    2sa1307

    Abstract: No abstract text available
    Text: T oshiba -c d i s c r e t ë / o p t o } 9097250 T O S H IB A Tm 7ESa 56 ^ C D IS C R E T E/O P T O 730^ 0^ 5 1 1 '? 2SA1307 SILICON PNP EPITAXIAL TYPE PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1CL3MAX. 7.0 3 .2 ± Û 2 A FEATURES: . Low Saturation Voltage


    OCR Scan     		PDF 2SC3299 2SA1307 2sa1307

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SB536A

    Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
    Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ


    OCR Scan     		PDF 2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431

    AC188

    Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A


    OCR Scan     		PDF BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 2N2907A-PL 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD