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    2SA122 Price and Stock

    Rochester Electronics LLC 2SA1222-T-AZ

    TRANS PNP 160V 0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1222-T-AZ Bulk 22,000 628
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    Rochester Electronics LLC 2SA1221-AZ

    TRANS PNP 140V 0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1221-AZ Bulk 10,579 902
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    Rochester Electronics LLC 2SA1221-T-AZ

    TRANS PNP 140V 0.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1221-T-AZ Bulk 6,000 902
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    Toshiba America Electronic Components 2SA1225-Y(Q)

    TRANS PNP 160V 1.5A PW-MOLD
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    DigiKey 2SA1225-Y(Q) Bulk 200
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    Renesas Electronics Corporation 2SA1222-T-AZ

    PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA1222-T-AZ 22,000 726
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    Rochester Electronics 2SA1222-T-AZ 22,000 1
    • 1 $0.4597
    • 10 $0.4597
    • 100 $0.4321
    • 1000 $0.3907
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    Find more 2SA122 price and stock on Findchips.com

    2SA122 Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA122 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA122 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA122 Unknown Cross Reference Datasheet Scan PDF
    2SA122 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA122 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA122 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA122 Unknown Vintage Transistor Datasheets Scan PDF
    2SA122 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA122 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1220 Micro Commercial Components PNP Silicon Power Transistor Original PDF
    2SA1220 NEC Semiconductor Selection Guide 1995 Original PDF
    2SA1220 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SA1220 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1220 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1220 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1220 Unknown Cross Reference Datasheet Scan PDF
    2SA1220 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1220 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1220 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1220 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ...

    2SA122 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1227A

    Abstract: 2SA1227 2987A C 2987A hfe1 2987A pnp 2sc2987
    Text: Inchange Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications


    Original     		2SA1227 2SA1227A 2SC2987/2987A 2SA1227 -140V; 2SA1227A 2987A C 2987A hfe1 2987A pnp 2sc2987 PDF

    transistor 2sa1227

    Abstract: transistor 2sc2987 2SA1227 2SC2987 2SA122 PB-60
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1227 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2987 APPLICATIONS ·For audio frequency power amplifier applications.


    Original     		2SA1227 -140V 2SC2987 -140V; transistor 2sa1227 transistor 2sc2987 2SA1227 2SC2987 2SA122 PB-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2983 T O SH IB A TRA N SISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 Unit in mm PO W ER AM PLIFIER APPLICATIO NS DRIVER STAGE A M PLIFIER APPLICATIO NS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SC2983 2SA1225 PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA1227 Silicon PNP Power Transistor tt DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) .3 PIN: 1-Bas.e • Good Linearity of I>E


    Original     		2SA1227 -140V 2SC2987 -140V; PDF

    2SA1225

    Abstract: 2SC2983
    Text: TOSHIBA 2SC2983 T O S H IB A T R A N SIST O R SILICON NPN E P IT A X IA L T Y PE PCT PRO CESS 2SC2983 P O W E R A M P L IF IE R A PPLIC A TIO N S D RIV ER STAGE A M P L IF IE R A PPLIC A T IO N S • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225


    OCR Scan     		2SC2983 2SA1225 2SA1225 2SC2983 PDF

    2SA1225

    Abstract: 2SC2983
    Text: 2SA1225 TO SH IBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SA1225 2SC2983 2SA1225 PDF

    C2983

    Abstract: No abstract text available
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC2983 2SA1225 C2983 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		2SA1225 2SC2983 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SA1225 2SC2983 PDF

    2SA1225

    Abstract: 2SC2983 A1225
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		2SA1225 2SC2983 2SA1225 2SC2983 A1225 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。


    Original     		2SA1225 2SC2983 PDF

    2SC2987

    Abstract: 2SA1227
    Text: Inchange Semiconductor Product Specification 2SC2987 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SC2987 2SA1227 2SC2987 2SA1227 PDF

    C2983

    Abstract: 2SC2983 2SA1225
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		2SC2983 2SA1225 C2983 2SC2983 2SA1225 PDF

    2SA1225

    Abstract: 2SC2983 A1225
    Text: 2SA1225 TOSHIBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SA1225 2SC2983 961001EAA1 2SA1225 A1225 PDF

    2SA1227

    Abstract: 2SC2987 2SA1227A 2987A pnp 2987A
    Text: SavantIC Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications


    Original     		2SA1227 2SA1227A 2SC2987/2987A 2SA1227 -140V; 2SC2987 2SA1227A 2987A pnp 2987A PDF

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


    OCR Scan     		2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 PDF

    2SA1115

    Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
    Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225


    OCR Scan     		2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1024 2SB1430 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753 PDF

    2SA1225

    Abstract: A1225 2SC2983
    Text: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。


    Original     		2SA1225 2SC2983 2SA1225 A1225 2SC2983 PDF

    C2983

    Abstract: 2SA1225 2SC2983
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC2983 2SA1225 C2983 2SA1225 2SC2983 PDF

    2SA1220

    Abstract: 2SA1220A 2SC269
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A APPLICATIONS


    Original     		2SA1220/A -120V -2SA1220 -160V -2SA1220A 2SC2690/A 2SA1220 2SA1220A 2SA1220 2SA1220A 2SC269 PDF

    2SA1225

    Abstract: 2SC2983
    Text: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC2983 2SA1225 2SA1225 2SC2983 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC f ELECTRON DEVICE SILICON TRA N SISTO R / 2SA1226 H IG H F R E Q U E N C Y A M P L IF IE R PN P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth product • Low Output Capacitance


    OCR Scan     		2SA1226 PDF

    2SA1126

    Abstract: No abstract text available
    Text: SILICON T R A N SIST O R 2SA1226 HIGH FREQ U EN CY A M PLIFIER PN P SILICO N EPITA XIA L T R A N SIST O R MINI MOLD FEATURES PACKAGE DIM ENSIONS in millimeter« • High Gain Bandwidth product 2 8 ± 0.2 f j = 400 M H z TYP. • Low Output Capacitance Cob = 1.1 pF TYP.


    OCR Scan     		2SA1226 2SA1126 2SA1126 PDF

    C2983

    Abstract: 2SA1225 2SC2983
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		2SC2983 2SA1225 C2983 2SA1225 2SC2983 PDF