TLE8209
Abstract: TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E
Text: Data Sheet, Rev. 1.0, Feb. 2010 TLE8209-2SA SPI Programmable H-Bridge Automotive Power TLE8209-2SA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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TLE8209-2SA
TLE8209
TLE8209-2SA
IC HS 8108 power supply
IC HS 8108
tle8209-2
abe 810
PG-DSO-20-37
tle8209-1
LS 7313 S
tle8209 1E
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6142 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC
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2SC6142
20Base
2SC6142
16-Apr-09
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TPCP8902
Abstract: No abstract text available
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TPCP8902 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC
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TPCP8902
645mm*
TPCP8902
16-Apr-09
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JAPANESE TRANSISTOR 2SC
Abstract: 2sa Japanese Transistor
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6124 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC
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2SC6124
645mm*
10sec
100mA
2SC6124
16-Apr-09
JAPANESE TRANSISTOR 2SC
2sa Japanese Transistor
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2SC6125
Abstract: No abstract text available
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6125 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC
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2SC6125
645mm*
10sec
2SC6125
16-Apr-09
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6126 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC
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2SC6126
645mm*
10sec
2SC6126
16-Apr-09
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2SA1199
Abstract: No abstract text available
Text: h ~7> y $ /T ra n s is to rs 2SA1199 2SA1199S 2SA 1199/ 2SA 1199S X > ' i; □ > h =7 > ¿ ¿ X ? & * -f -y / Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors • i't-Jfi \f;i[2 l/D im e n s io n s Unit : mm 1 ) V C E (s a t) V c e ( s a t)
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1199S
2SA1199
2SA1199S
--60m
--200mV
400mA)
2SA1199
2SA1199S
/--10m
/--50m
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2SA1209
Abstract: 2SC2911
Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1209 DESCRIPTION • W ith TO-126 package • Complement to type 2SC2911 • High breakdown voltage • Fast switching speed APPLICATIONS • High-voltage switching and A F 100W predriver applications
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2SA1209
O-126
2SC2911
2SC2911
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2SC1226
Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A
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2SC1226,
2SC1226A
2SA699,
2SA699A
2SC1226
335Panasonic
2SA699
2SA699A
2SC1226A
2SA699 H
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2SA1080
Abstract: 2SC2530
Text: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are
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2SA1080
30MHz
10OnA,
lc-10mA
10MHz
300ms
2SA1080
2SC2530
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Untitled
Abstract: No abstract text available
Text: 2SA1862F5 h 7 > V ^ £ /Transistors 2SA 1862F5 E i s s i y u - t m pnp y u □ > h ? > v * $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^• '\t'3s0/Dimension8 (U nit: mm) 1) s iB ffT ife S o
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2SA1862F5
1862F5
--400V
100mA)
2SA1862F5
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2SA1807
Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
Text: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)
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2SA1807F5
-600V
-300mA/-60mA
500mA)
-300mA/-60mA)
-500mA)
SC-63
2SA1807
AO2000
600V PNP
230-Z
2SA1807F5
5A SF SC 30
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2Sa?05 H 2SC1905(H) Silicon PNP Triple-Diffusçd Planar Type Package Dim ensions Horizontal Deflection D river for d o lo r T V set Unit,! mm • Features • High collector-emitter voltage 10.5 ± 0 .5 (V ceo) E • Large collector power dissipation (Pc)
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2SC1905
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2SA1264
Abstract: 2SA1264N 2SC3181N 8 open colector output
Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1264N D E S C R IP TIO N • W ith TO -3P l package • Com plem ent to type 2S C 3181N • 2SA1264 with short pin A P P LIC A TIO N S • Pow er amplifier applications PINNING
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2SA1264N
2SC3181N
2SA1264
2SC3181N
8 open colector output
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2SA881
Abstract: 2sc4040 2SC2673
Text: 2SA881 /2SA1560 h 7 > y ^ 5 /Transistors 2SA881 2SA 1560 I k f£ PNP ' > U 3 > h 7 > V ^ ^ Epitaxial Planar PNP Silicon Transistors 4 ,^ ^ J i§ ltiffl/Medium Power Amp. 5 • w * : V T \ s — • ii- J f^ > i0 / D im e n s io n s U n it: mm 1) /Jv$)FTRA v
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2SA881
/2SA1560
--500mA/--50mA)
2SC2673/2SC4040
600mW
2SC2673,
2SC4040.
--100mA
2sc4040
2SC2673
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2SA885
Abstract: 2sc1846
Text: Power Transistors 2SG1846 2SC1846 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Amplifier Com plem entary Pair with 2SA885 • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEtsati • 3W o u tp u t in c o m p le m e n ta ry p air w ith 2SA 885
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2SC1846
2SA885
O-126
32flS2
G01b3Sb
-10mA
2SA885
2sc1846
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2SA699
Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
Text: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A
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2SA699,
2SA699A
2SC1226,
2SC1226A
2SA699
2SA699A
2SC1226A
2SA699 H
2SC1226
2SA699 Q
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1G05
Abstract: 2SA1078 2SC2528
Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are
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2SA1078
2SA1078
2SC2528,
10MHz
20VilE
300ms
1G05
2SC2528
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25C3264
Abstract: 2sa1643 2SC3519a
Text: Power Transistors 2SA type N o îe : Î L A P T * F u li-M o ld Absolute I Typ e No. Pc VCBO J. S/CEO te I re -"T j >- Electrical Characteristics Ta* . A-•4 fr hFE VcE sat) R é s is ta n te m ax (V) < M H l) ccm R em arks P ackage (W ) (v> m (A)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA148E
2SA1492
25C3264
2sa1643
2SC3519a
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2sa1834
Abstract: 2SC5001R
Text: | ' 7 > y ^ í f / T ransistors 2SA 1834 2SA1834 y U = l > h 7 > v * * Epitaxial Planar PNP Silicon Transistor fifcJlíJfcíi'liffl/Low Freq. Power Amp. 1W f ^ ü lä /D im e n s io n s Unit : mm 2.3 ' f 6.51 0,2 1) V c E ( s a t ) ^ 6 ^ o ^ ♦o ? , CO.5
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2SA1834
2SC5001
2SC5001.
2sa1834
2SC5001R
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2SA1096
Abstract: 2SA1096A
Text: AOK AOK Semiconductor P roduct S pecification 2SA1096 2SA 1096A S ilicon PNP Pow er T ransistors DESCRIPTIO N • W ith T O -126 package • C om plem ent to type 2S C 2497/2S C 2497A A P P LIC A T IO N S • F o r low -frequency power am plification PINNING
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2SA1096
2SA1096A
O-126
2SC2497/2SC2497A
2SA1096A
100x2
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2SA1276
Abstract: 2SC3230 BR VEX
Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1276 D E S C R IP T IO N • W ith T O -2 2 0 package • C om plem ent to type 2 S C 3 2 3 0 • Good linearity of hFE >*\ A P P L IC A T IO N S t I • G en eral purpose applications
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2SA1276
T0-220
2SC3230
O-220)
2SC3230
BR VEX
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2SA POWER TRANSISTORS
Abstract: No abstract text available
Text: h "7 > V h $ /T ra n sisto rs 2SA874M 2SA 1548 2SA874M/2SA1548 4 l ^ i i llliffl/M eclium Power Amp. Epitaxial Planar PNP Silicon Transistors • 9\-M ~*ï jiH I/D im e n s io n s U nit : mm) 1) lc Max = — 500m A 2) vCE <sa.) L T I '5 o 3) 2SC1652, 2SC4016 £ □ > z f >) 0
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2SA874M/2SA1548
2SA874M
2SC1652,
2SC4016
500mA
2SC4016.
2SA POWER TRANSISTORS
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2sa11
Abstract: No abstract text available
Text: h ~7y y 7 $ /T ra n s is to rs 2SA 119 9 /2 S A 1 199S 2SA1199 2SA1199S 7’ JU-Jls-J-BPNP S ÿ > y 7,$ Epitaxial Planar PNP Silicon Transistors & 7 'f y ? y y^ffl/Medium Power Amp. & Switching • H i f i T fä E l/'D im e n s io n s U nit : mm 1) VcE(sat) &&
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2SA1199
2SA1199S
--5------50mA,
2SA1199
--400mA,
--40mA)
2sa11
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