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    2SA POWER TRANSISTORS Search Results

    2SA POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TLE8209

    Abstract: TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E
    Text: Data Sheet, Rev. 1.0, Feb. 2010 TLE8209-2SA SPI Programmable H-Bridge Automotive Power TLE8209-2SA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    PDF TLE8209-2SA TLE8209 TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6142 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC


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    PDF 2SC6142 20Base 2SC6142 16-Apr-09

    TPCP8902

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TPCP8902 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC


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    PDF TPCP8902 645mm* TPCP8902 16-Apr-09

    JAPANESE TRANSISTOR 2SC

    Abstract: 2sa Japanese Transistor
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6124 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC


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    PDF 2SC6124 645mm* 10sec 100mA 2SC6124 16-Apr-09 JAPANESE TRANSISTOR 2SC 2sa Japanese Transistor

    2SC6125

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6125 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC


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    PDF 2SC6125 645mm* 10sec 2SC6125 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6126 Category: Transistors /Bipolar Power Transistors/High-Frequency Switching Power Transistors 2SA Series,2SC


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    PDF 2SC6126 645mm* 10sec 2SC6126 16-Apr-09

    2SA1199

    Abstract: No abstract text available
    Text: h ~7> y $ /T ra n s is to rs 2SA1199 2SA1199S 2SA 1199/ 2SA 1199S X > ' i; □ > h =7 > ¿ ¿ X ? & * -f -y / Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors • i't-Jfi \f;i[2 l/D im e n s io n s Unit : mm 1 ) V C E (s a t) V c e ( s a t)


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    PDF 1199S 2SA1199 2SA1199S --60m --200mV 400mA) 2SA1199 2SA1199S /--10m /--50m

    2SA1209

    Abstract: 2SC2911
    Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1209 DESCRIPTION • W ith TO-126 package • Complement to type 2SC2911 • High breakdown voltage • Fast switching speed APPLICATIONS • High-voltage switching and A F 100W predriver applications


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    PDF 2SA1209 O-126 2SC2911 2SC2911

    2SC1226

    Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
    Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A


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    PDF 2SC1226, 2SC1226A 2SA699, 2SA699A 2SC1226 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H

    2SA1080

    Abstract: 2SC2530
    Text: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are


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    PDF 2SA1080 30MHz 10OnA, lc-10mA 10MHz 300ms 2SA1080 2SC2530

    Untitled

    Abstract: No abstract text available
    Text: 2SA1862F5 h 7 > V ^ £ /Transistors 2SA 1862F5 E i s s i y u - t m pnp y u □ > h ? > v * $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^• '\t'3s0/Dimension8 (U nit: mm) 1) s iB ffT ife S o


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    PDF 2SA1862F5 1862F5 --400V 100mA) 2SA1862F5

    2SA1807

    Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
    Text: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)


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    PDF 2SA1807F5 -600V -300mA/-60mA 500mA) -300mA/-60mA) -500mA) SC-63 2SA1807 AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2Sa?05 H 2SC1905(H) Silicon PNP Triple-Diffusçd Planar Type Package Dim ensions Horizontal Deflection D river for d o lo r T V set Unit,! mm • Features • High collector-emitter voltage 10.5 ± 0 .5 (V ceo) E • Large collector power dissipation (Pc)


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    PDF 2SC1905

    2SA1264

    Abstract: 2SA1264N 2SC3181N 8 open colector output
    Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1264N D E S C R IP TIO N • W ith TO -3P l package • Com plem ent to type 2S C 3181N 2SA1264 with short pin A P P LIC A TIO N S • Pow er amplifier applications PINNING


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    PDF 2SA1264N 2SC3181N 2SA1264 2SC3181N 8 open colector output

    2SA881

    Abstract: 2sc4040 2SC2673
    Text: 2SA881 /2SA1560 h 7 > y ^ 5 /Transistors 2SA881 2SA 1560 I k f£ PNP ' > U 3 > h 7 > V ^ ^ Epitaxial Planar PNP Silicon Transistors 4 ,^ ^ J i§ ltiffl/Medium Power Amp. 5 • w * : V T \ s — • ii- J f^ > i0 / D im e n s io n s U n it: mm 1) /Jv$)FTRA v


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    PDF 2SA881 /2SA1560 --500mA/--50mA) 2SC2673/2SC4040 600mW 2SC2673, 2SC4040. --100mA 2sc4040 2SC2673

    2SA885

    Abstract: 2sc1846
    Text: Power Transistors 2SG1846 2SC1846 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Amplifier Com plem entary Pair with 2SA885 • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEtsati • 3W o u tp u t in c o m p le m e n ta ry p air w ith 2SA 885


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    PDF 2SC1846 2SA885 O-126 32flS2 G01b3Sb -10mA 2SA885 2sc1846

    2SA699

    Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
    Text: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A


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    PDF 2SA699, 2SA699A 2SC1226, 2SC1226A 2SA699 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q

    1G05

    Abstract: 2SA1078 2SC2528
    Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are


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    PDF 2SA1078 2SA1078 2SC2528, 10MHz 20VilE 300ms 1G05 2SC2528

    25C3264

    Abstract: 2sa1643 2SC3519a
    Text: Power Transistors 2SA type N o îe : Î L A P T * F u li-M o ld Absolute I Typ e No. Pc VCBO J. S/CEO te I re -"T j >- Electrical Characteristics Ta* . A-•4 fr hFE VcE sat) R é s is ta n te m ax (V) < M H l) ccm R em arks P ackage (W ) (v> m (A)


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    PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA148E 2SA1492 25C3264 2sa1643 2SC3519a

    2sa1834

    Abstract: 2SC5001R
    Text: | ' 7 > y ^ í f / T ransistors 2SA 1834 2SA1834 y U = l > h 7 > v * * Epitaxial Planar PNP Silicon Transistor fifcJlíJfcíi'liffl/Low Freq. Power Amp. 1W f ^ ü lä /D im e n s io n s Unit : mm 2.3 ' f 6.51 0,2 1) V c E ( s a t ) ^ 6 ^ o ^ ♦o ? , CO.5


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    PDF 2SA1834 2SC5001 2SC5001. 2sa1834 2SC5001R

    2SA1096

    Abstract: 2SA1096A
    Text: AOK AOK Semiconductor P roduct S pecification 2SA1096 2SA 1096A S ilicon PNP Pow er T ransistors DESCRIPTIO N • W ith T O -126 package • C om plem ent to type 2S C 2497/2S C 2497A A P P LIC A T IO N S • F o r low -frequency power am plification PINNING


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    PDF 2SA1096 2SA1096A O-126 2SC2497/2SC2497A 2SA1096A 100x2

    2SA1276

    Abstract: 2SC3230 BR VEX
    Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1276 D E S C R IP T IO N • W ith T O -2 2 0 package • C om plem ent to type 2 S C 3 2 3 0 • Good linearity of hFE >*\ A P P L IC A T IO N S t I • G en eral purpose applications


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    PDF 2SA1276 T0-220 2SC3230 O-220) 2SC3230 BR VEX

    2SA POWER TRANSISTORS

    Abstract: No abstract text available
    Text: h "7 > V h $ /T ra n sisto rs 2SA874M 2SA 1548 2SA874M/2SA1548 4 l ^ i i llliffl/M eclium Power Amp. Epitaxial Planar PNP Silicon Transistors • 9\-M ~*ï jiH I/D im e n s io n s U nit : mm) 1) lc Max = — 500m A 2) vCE <sa.) L T I '5 o 3) 2SC1652, 2SC4016 £ □ > z f >) 0


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    PDF 2SA874M/2SA1548 2SA874M 2SC1652, 2SC4016 500mA 2SC4016. 2SA POWER TRANSISTORS

    2sa11

    Abstract: No abstract text available
    Text: h ~7y y 7 $ /T ra n s is to rs 2SA 119 9 /2 S A 1 199S 2SA1199 2SA1199S 7’ JU-Jls-J-BPNP S ÿ > y 7,$ Epitaxial Planar PNP Silicon Transistors & 7 'f y ? y y^ffl/Medium Power Amp. & Switching • H i f i T fä E l/'D im e n s io n s U nit : mm 1) VcE(sat) &&


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    PDF 2SA1199 2SA1199S --5------50mA, 2SA1199 --400mA, --40mA) 2sa11