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    OC140

    Abstract: 2S0187 SK3011 Low-Power Germanium NPN TR182 2N43 2S030 2n357a ASY73
    Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max (A) fT (Hz) C bo Max (F) ICBO Max V(BR)CEO Po Max (A) (V) (W) Derate at (WrC) Tope, 2.5m 2.8m 2.5m 100 J 75 J 75 J 100 J 1.lm 4.0m 2.5m 2.0m 60A 75 A 100 J 100 J 100 J TO• 1


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    PDF 2S0195 2N1431 OC140 2N1251 2S0186 2Nl00 2N169A 2N1585 2N1302 2SC180 2S0187 SK3011 Low-Power Germanium NPN TR182 2N43 2S030 2n357a ASY73

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2S0187

    Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
    Text: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®


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    PDF 2SB1000 2SB1000A 2SB1001 2SB1002 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2S0187 transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    2SD1878

    Abstract: 2SD1650 2SD1710 2SA1696 2SA1697 2SC4075 2SC4473 2SC4474 2SC4478 2SD1397
    Text: Continued from previous page Absolute maximum ratings Device Package Applications Electrical characteristics T , a 25 °C Icbo max @ ¥<* IcBO mM I Vcb- _ hre @ Vce •* le Ve» {V) Vceo <V> Vebo 300 High-resolution CRT display, video output dnver 120 12SC4473


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    PDF 2SC4075 T0220ML 2SA1696 2SC4473 2SA1697 2SD1880 T03PML 2SD1878 2SD1650 2SD1710 2SC4474 2SC4478 2SD1397

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d