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Untitled Abstract: No abstract text available Text: 2PB1219S Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m	Original	PDF	2PB1219S Freq140M
transistor SMD s72 Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той	Original	PDF	OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
2PB1219R Abstract: 2PB1219S 2PB1219 2PB1219A 2PB1219Q 2PB1219AQ 2PB1219AR 2PB1219AS Text: Philips Semiconductors Objective specification PNP general purpose transistors 2PB1219; 2PB1219A FEATURES • Large collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION	OCR Scan	PDF	2PB1219; 2PB1219A 2PB1219Q 2PB1219R 2PB1219S 2PB1219AQ 2PB1219AR 2PB1219AS 2PB1219 2PB1219 2PB1219A
Untitled Abstract: No abstract text available Text: Objective specification Philips Semiconductors PNP general purpose transistors 2PB1219; 2PB1219A FEATURES • Large collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION	OCR Scan	PDF	2PB1219; 2PB1219A 2PB1219Q 2PB1219R 2PB1219S 2PB1219AQ 2PB1219AR 2PB1219AS 2PB1219